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Terahertz frequency has promising applications in communication, security scanning, medical imaging, and industry. THz absorbers are one of the required components for future THz applications. However, nowadays, obtaining a high absorption, simple structure, and ultrathin absorber is a challenge. In this work, we present a thin THz absorber that can be easily tuned through the whole THz range (0.1–10 THz) by applying a low gate voltage (<1 V). The structure is based on cheap and abundant materials (MoS2/graphene). Nanoribbons of MoS2/graphene heterostructure are laid over a SiO2 substrate with an applied vertical gate voltage. The computational model shows that we can achieve an absorptance of approximately 50% of the incident light. The absorptance frequency can be tuned through varying the structure and the substrate dimensions, where the nanoribbon width can be varied approximately from 90 nm to 300 nm, while still covering the whole THz range. The structure performance is not affected by high temperatures (500 K and above), so it is thermally stable. The proposed structure represents a low-voltage, easily tunable, low-cost, and small-size THz absorber that can be used in imaging and detection. It is an alternative to expensive THz metamaterial-based absorbers.

Abstract Two-dimensional semiconductors, including transition metal dichalcogenides, are of interest in electronics and photonics but remain nonmagnetic in their intrinsic form. Previous efforts to form two-dimensional dilute magnetic semiconductors utilized extrinsic doping techniques or bulk crystal growth, detrimentally affecting uniformity, scalability, or Curie temperature. Here, we demonstrate an in situ substitutional doping of Fe atoms into MoS 2 monolayers in the chemical vapor deposition growth. The iron atoms substitute molybdenum sites in MoS 2 crystals, as confirmed by transmission electron microscopy and Raman signatures. We uncover an Fe-related spectral transition of Fe:MoS 2 monolayers that appears at 2.28 eV above the pristine bandgap and displays pronounced ferromagnetic hysteresis. The microscopic origin is further corroborated by density functional theory calculations of dipole-allowed transitions in Fe:MoS 2 . Using spatially integrating magnetization measurements and spatially resolving nitrogen-vacancy center magnetometry, we show that Fe:MoS 2 monolayers remain magnetized even at ambient conditions, manifesting ferromagnetism at room temperature.

Tungsten diselenide (WSe2) and related transition metal dichalcogenides exhibit interesting optoelectronic properties owing to their peculiar band structures originating from the valley degree of freedom. Although the optical generation and detection of valley polarization has been demonstrated, it has been difficult to realize active valley-dependent functions suitable for device applications. We report an electrically switchable, circularly polarized light source based on the material's valley degree of freedom. Our WSe2-based ambipolar transistors emit circularly polarized electroluminescence from p-i-n junctions electrostatically formed in transistor channels. This phenomenon can be explained qualitatively by the electron-hole overlap controlled by the in-plane electric field. Our device demonstrates a route to exploit the valley degree of freedom and the possibility to develop a valley-optoelectronics technology.

Two-dimensional semiconductors, including transition metal dichalcogenides, are of interest in electronics and photonics but remain nonmagnetic in their intrinsic form. Previous efforts to form two-dimensional dilute magnetic semiconductors utilized extrinsic doping techniques or bulk crystal growth, detrimentally affecting uniformity, scalability, or Curie temperature. Here, we demonstrate an in situ substitutional doping of Fe atoms into MoS 2 monolayers in the chemical vapor deposition growth. The iron atoms substitute molybdenum sites in MoS 2 crystals, as confirmed by transmission electron microscopy and Raman signatures. We uncover an Fe-related spectral transition of Fe:MoS 2 monolayers that appears at 2.28 eV above the pristine bandgap and displays pronounced ferromagnetic hysteresis. The microscopic origin is further corroborated by density functional theory calculations of dipole-allowed transitions in Fe:MoS 2 . Using spatially integrating magnetization measurements and spatially resolving nitrogen-vacancy center magnetometry, we show that Fe:MoS 2 monolayers remain magnetized even at ambient conditions, manifesting ferromagnetism at room temperature. Ferromagnetism with a Curie temperature above room temperature in 2D materials is highly desirable for practical spintronics applications. Here, the authors demonstrate such phenomenon in monolayer MoS 2 via in situ iron-doping and measured local magnetic field strength up to 0.5 ± 0.1 mT.

Functionalities of two-dimensional (2D) crystals based on semiconducting transition metal dichalcogenides (TMDs) have now stemmed from simple field effect transistors (FETs) to a variety of electronic and opto-valleytronic devices and even to superconductivity. Among them, superconductivity is the least studied property in TMDs due to methodological difficulty accessing it in different TMD species. Here, we report the systematic study of superconductivity in MoSe 2 , MoTe 2 and WS 2 by ionic gating in different regimes. Electrostatic gating using ionic liquid was able to induce superconductivity in MoSe 2 but not in MoTe 2 because of inefficient electron accumulation limited by electronic band alignment. Alternative gating using KClO 4 /polyethylene glycol enabled a crossover from surface doping to bulk doping, which induced superconductivities in MoTe 2 and WS 2 electrochemically. These new varieties greatly enriched the TMD superconductor families and unveiled critical methodology to expand the capability of ionic gating to other materials.

Surface plasmon resonance (SPR) sensors based on a silver film suffer from signal degradation due to silver oxidation in aqueous sensing environments. To overcome this limitation, we fabricated the planar plasmonic substrate employing an atomic MoS2 layer on a silver surface. Successful production of a large-area MoS2 monolayer blocks the penetration of oxygen and water molecules. In addition, we theoretically and experimentally found that MoS2 layer on the silver film can improve the SPR sensitivity and stability significantly. In this study, the proposed SPR substrate has the potential to provide highly enhanced sensor platforms for surface-limited molecular detections.

HighlightsIn-situ construction of electrostatic repulsion between MoS2 interlayers is first proposed to successfully prepare Co-doped monolayer MoS2 under high vapor pressure.The doped Co atoms radically decrease bandgap and lithium ion diffusion energy barrier of monolayer MoS2 and can be transformed into ultrasmall Co nanoparticles (~2 nm) to induce strong surface-capacitance effect during conversion reaction.The Co doped monolayer MoS2 shows ultrafast ion transport capability along with ultrahigh capacity and outstanding cycling stability as lithium-ion-battery anodes.High theoretical capacity and unique layered structures make MoS2 a promising lithium-ion battery anode material. However, the anisotropic ion transport in layered structures and the poor intrinsic conductivity of MoS2 lead to unacceptable ion transport capability. Here, we propose in-situ construction of interlayer electrostatic repulsion caused by Co2+ substituting Mo4+ between MoS2 layers, which can break the limitation of interlayer van der Waals forces to fabricate monolayer MoS2, thus establishing isotropic ion transport paths. Simultaneously, the doped Co atoms change the electronic structure of monolayer MoS2, thus improving its intrinsic conductivity. Importantly, the doped Co atoms can be converted into Co nanoparticles to create a space charge region to accelerate ion transport. Hence, the Co-doped monolayer MoS2 shows ultrafast lithium ion transport capability in half/full cells. This work presents a novel route for the preparation of monolayer MoS2 and demonstrates its potential for application in fast-charging lithium-ion batteries.

The 2D MoS2 with superior optoelectronic properties such as high charge mobility and broadband photoresponse has attracted broad research interests in photodetectors (PD). However, due to the atomic thin layer of 2D MoS2, its pure photodetectors usually suffer from inevitable drawbacks such as large dark current, and intrinsically slow response time. Herein, a new organic material BTP‐4F with high mobility is successfully stacked with 2D MoS2 film to form an integrated 2D MoS2/organic P–N heterojunction, facilitating efficient charge transfer as well as significantly suppressed dark current. As a result, the as‐obtained 2D MoS2/organic (PD) has exhibited excellent response and fast response time of 332/274 µs. The analysis validated photogenerated electron transition from this monolayer MoS2 to subsequent BTP‐4F film, whereas the transited electron is originated from the A− exciton of 2D MoS2 by temperature‐dependent photoluminescent analysis. The ultrafast charge transfer time of ≈0.24 ps measured by time‐resolved transient absorption spectrum is beneficial for efficient electron–hole pair separation, greatly contributing to the obtained fast photoresponse time of 332/274 µs. This work can open a promising window to acquire low‐cost and high‐speed (PD). The novel organic material BTP‐4F is stacked with monolayer MoS2 to form a heterojunction, facilitating efficient charge transfer as well as significantly suppressed dark current for the photodetector, which exhibits excellent responsivity of 3.2 A W−1, detectivity of 1.6 × 109 Jones, high external quantum efficiency of 756%, and fast response time of 332/274 µs.

Modulating magnetic properties in monolayer MoS2 is important for the applications in spintronics and magnetism devices. In this work, we have studied the electronic, magnetic and optical properties of co-doped monolayer MoS2 with As–Ge (Si) doping on S surfaces through the first-principle calculations. Our results show that the magnetic properties of monolayer MoS2 can be tuned effectively by the distance of co-doped atoms. The projected density of state and the charge transfer demonstrate the interaction and superexchange coupling between As and Ge (Si) atoms are the key factor in the magnetic properties of co-doped structures. Furthermore, it is found that co-doping can also induce spin-polarized optical properties in low-energy region, which makes the co-doped MoS2 attractive candidates for spin-polarized photoelectric device applications.