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Moore's law : the life of Gordon Moore, Silicon Valley's quiet revolutionary
Our world todayfrom the phone in your pocket to the car that you drive, the allure of social media to the strategy of the Pentagonhas been shaped irrevocably by the technology of silicon transistors. Year after year, for half a century, these tiny switches have enabled ever-more startling capabilities. Their incredible proliferation has altered the course of human history as dramatically as any political or social revolution. At the heart of it all has been one quiet Californian: Gordon Moore. At Fairchild Semiconductor, his seminal Silicon Valley startup, Moorea young chemist turned electronics entrepreneurhad the defining insight: silicon transistors, and microchips made of them, could make electronics profoundly cheap and immensely powerful. Microchips could double in power, then redouble again in clockwork fashion. History has borne out this insight, which we now call Moore's Law\", and Moore himself, having recognized it, worked endlessly to realize his vision. With Moore's technological leadership at Fairchild and then at his second start-up, the Intel Corporation, the law has held for fifty years. The result is profound: from the days of enormous, clunky computers of limited capability to our new era, in which computers are placed everywhere from inside of our bodies to the surface of Mars. Moore led nothing short of a revolution. In Moore's Law, Arnold Thackray, David C. Brock, and Rachel Jones give the authoritative account of Gordon Moore's life and his role in the development both of Silicon Valley and the transformative technologies developed there. Told by a team of writers with unparalleled access to Moore, his family, and his contemporaries, this is the human story of man and a career that have had almost superhuman effects. The history of twentieth-century technology is littered with overblown revolutions.\" Moore's Law is
essential reading for anyone seeking to learn what a real revolution looks like.
eBook
Moore's law : the life of Gordon Moore, Silicon Valley's quiet revolutionary
\"A chemist and founder of Intel, Gordon Moore played a major role in revolutionizing technology and shaping the growth and reach of Silicon Valley. The story of the man--an inventor and businessman whose influence on the world is at least as great as Thomas Edison's, Henry Ford's, or Bill Gates's--has never before been told ... [In this book], Arnold Thackray sheds light on Gordon Moore, gives context to the technologies and world of high-tech power he helped to develop, and provides [an] ... introduction to the history and science of the silicon transistor, the technological building block that has transformed commercial business, defense strategies, and the everyday lives of individuals around the globe\"-- Provided by publisher.
Book
Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution
Highlights
This review introduces promising semiconductor materials for future transistors, including two-dimensional van der Waals materials, Mott insulators, halide perovskites, and amorphous oxides, with advantages such as clean interfaces, ultra-thin channels, and defect tolerance.
These materials, when combined with advanced gate dielectrics and next-generation interconnects, offer synergistic solutions to scaling challenges such as carrier scattering, oxide thickness limitations, and interface degradation.
The review also discusses reliability concerns including thermal instability and leakage current, and explores future applications in artificial intelligence hardware, in-memory computing, and three-dimensional integration.
As silicon-based transistors face fundamental scaling limits, the search for breakthrough alternatives has led to innovations in 3D architectures, heterogeneous integration, and sub-3 nm semiconductor body thicknesses. However, the true effectiveness of these advancements lies in the seamless integration of alternative semiconductors tailored for next-generation transistors. In this review, we highlight key advances that enhance both scalability and switching performance by leveraging emerging semiconductor materials. Among the most promising candidates are 2D van der Waals semiconductors, Mott insulators, and amorphous oxide semiconductors, which offer not only unique electrical properties but also low-power operation and high carrier mobility. Additionally, we explore the synergistic interactions between these novel semiconductors and advanced gate dielectrics, including high-
K
materials, ferroelectrics, and atomically thin hexagonal boron nitride layers. Beyond introducing these novel material configurations, we address critical challenges such as leakage current and long-term device reliability, which become increasingly crucial as transistors scale down to atomic dimensions. Through concrete examples showcasing the potential of these materials in transistors, we provide key insights into overcoming fundamental obstacles—such as device reliability, scaling down limitations, and extended applications in artificial intelligence—ultimately paving the way for the development of future transistor technologies.
Journal Article
Moore's Law Forever?
According to Moore's law, the number of transistors on a chip should double in each technology generation. For more than 30 years, compliance with this law has been driven by the shrinking of transistor dimensions. But as Lundstrom explains in his Perspective, device physics and the limitations of existing materials pose restrictions on how far transistor dimensions can be reduced. Moore's law may nevertheless survive as device engineers build layers of devices on chips or use new approaches such as molecular electronics.
Journal Article
Spin Current Enhancement Using Double-Ferromagnetic-Layer Structure for Magnetoelectric Spin-Orbit Logic Device
The use of Moore’s law appears to be coming to an end due to technological and physical constraints, as complementary metal-oxide semiconductor (CMOS) transistors become smaller and closer to the atomic scale. Therefore, various emerging technologies are being researched as potential successors to traditional CMOS transistors, and one of the most exciting candidates is the magnetoelectric spin-orbit (MESO) device. The MESO device comprises two portions (input and output) and it cascades charge/voltage as input and output signals. In the MESO device’s output portion, ferromagnetic (FM) and high-spin-orbit-coupling layers are employed to provide spin-polarized current and charge/voltage output. In this paper, we offer a description and analysis of the operating mechanism of the MESO device’s output portion using a spin flow approach and propose a double-FM-layer structure. In the double-FM-layer structure, we implement two FM layers with antiparallel magnetization directions, instead of using a single-FM-layer structure to increase the output charge/voltage. The proposed structure is verified through the Verilog-A compact model.
Journal Article
Strategy as Vector and the Inertia of Coevolutionary Lock-in
To examine the consequences of a period of extraordinary success for the long-term adaptive capability of a firm's strategy-making process, this comparative longitudinal study of Andy Grove's tenure as Intel Corporation's chief executive officer (CEO) documents how he moved Intel's strategy-making process from an internal-ecology model to the classical rational-actor model during 1987-1998. His creation of a highly successful strategy vector pursued through an extremely focused induced-strategy process led to coevolutionary lock-in with the personal computer market segment, in which Intel's strategy making became increasingly tied to its existing product market. Intracompany analysis of four new business development cases highlights the inertial consequences of coevolutionary lock-in. The paper examines implications of coevolutionary lock-in in terms of its effect on balancing induced and autonomous strategy processes and exploitation and exploration in organizational learning.
Journal Article
Gordon Moore Receives Sigma Xi's Highest Honor
Intel Corporation co-founder Gordon Moore is the 2019 recipient of Sigma Xi's highest honor, the Gold Key Award, which the Society's Executive Committee and Board of Directors present to recognize a member's extraordinary contributions to his or her profession and for carrying out the values in Sigma Xi's mission--fostering critical innovations, cultivating integrity in research, or promoting the public understanding of science. Moore was Intel's president, chief executive officer, and chairman of the board of directors.
Journal Article
Making Sense in Hypercompetitive Environments: A Cognitive Explanation for the Persistence of High Velocity Competition
This paper explores the cognitive aspects underlying industries in hypercompetitive environments. Hypercompetition represents a state of competition with rapidly escalating levels of competition and reduced periods of competitive advantage for firms. In hypercompetitive industries member firms act boldly and aggressively to create a state of competitive disequilibrium. In this paper we explore the particular conditions that managers encounter in making sense of hypercompetitive industries and argue that the nature of these conditions is such that conventional sensemaking frameworks will not work. We then describe the \"adaptive sensemaking\" practices established in the literature for dealing with temporary turbulence and suggest that in hypercompetition those processes continue indefinitely. We argue that these processes can become institutionalized as standard operating procedures within firms, and as shared recipes within industries, which in turn perpetuates hyperturbulent conditions.
Journal Article