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To efficiently process the massive amount of sensor data, it is demanding to develop a new paradigm. Inspired by neurobiological systems, an infrared near‐senor reservoir computing (RC) system, consisting of infrared sensors and memristors based on single‐crystalline LiTaO3 and LiNbO3 (LN) thin film respectively, is demonstrated. The analog memristor is used as a reservoir in the RC system to process sensor signals with spatiotemporal characteristics. LN crystal structure stacked with oxygen octahedra provides favorable conditions for reliable Mott variable‐range hopping conduction, which provides the memristor with tens of thousands of reservoir states within a large dynamic range. With the characteristics, the analog sensor signals with high data fidelity can be directly fed to the memristive reservoir, and the spatiotemporal features can be separated and mapped. The system demonstrated a dynamic gesture perception task, achieving an accuracy of 99.6%, which highlights the great application potential of the memristor in signal sensor processing and will advance the application of artificial intelligence in sensor systems. Crystal ion slicing techniques are used to fabricate a single‐crystalline thin film for both the memristor and sensor, which opens up the possibility of realizing monolithic integration of a memristor‐based near‐sensor computing system. A novel infrared near‐sensor reservoir computing (RC) system constructed from an ion‐slicing LiTaO3‐based infrared array and ion‐slicing LiNbO3‐based memristor array is demonstrated. Thanks to the excellent capacities of the memristor reservoir, the infrared near‐senor RC system successfully and robustly implemented a dynamic gesture perception task with spatiotemporal feature fusion.

Here, development of some Ag 2 S mixed chalcogenide glassy systems has been discussed in the light of DC conductivity model and variable range hopping model. X-ray diffraction (XRD) pattern has been collected to explore microstructure of them. Various nanophases such as Ag 2 Se and GeSe 2 have been pointed out from XRD studies. Defects have been identified in the form of dislocation, and their roles in the electrical transport properties have been established. FE-SEM micrographs exhibit their amorphous nature with distributed sharper crystal-like structure. Optical phonon frequency may cause to enhance the structural vibrations by means of increasing DC electrical conductivity. Significant enhancement of density of states near Fermi level at low and high temperatures have been explained. Present glassy structure is expected to expand to reduce the scattering cross-section for getting higher values of N(E F ) at higher temperature up to a great extent.

Inspired by human brain, the emerging analog‐type memristor employed in neuromorphic computing systems has attracted tremendous interest. However, existing analog memristors are still far from accurate tuning of multiple conductance states, which are crucial from the device‐level view. Herein, a reliable analog memristor based on ion‐slicing single‐crystalline LiNbO3 (LNO) thin film is demonstrated. The highly ordered LNO crystal structure provides a stable pathway of oxygen vacancy migration, which is contributed to a stable Mott variable‐range hopping process in trap sites. Excellent analog switching characteristics with high reliability and repeatability, including long retention/great endurance with small fluctuation (fluctuated within 0.22%), a large dynamic range of two orders of magnitude, hundreds of distinguishable conductance states with tunable linearity, and ultralow cyclic variances for multiple weight updating (down to 0.75%), are realized with the proposed memristor. As a result, a multilayer perceptron with a high recognition accuracy of 95.6% for Modified National Institute of Standards and Technology dataset is realized. The proposed analog memristive devices based on ion‐slicing single‐crystalline thin films offer a novel strategy for fabricating high‐performance memristors that combined linear tunability and long‐term repeatability, opening a novel avenue for neuromorphic computing application. A reliable analog memristor based on ion‐slicing single‐crystalline LiNbO3 (LNO) thin film is demonstrated. Relying on the highly ordered crystal structure of LNO single crystal, the reversible Mott variable‐range hopping conduction dominates the device switching behavior and guarantees an analog dynamic range of two orders of magnitude with hundreds of distinguishable intermediate states for high‐performance neuromorphic computing applications.

We fabricated memristive devices using focused electron beam-induced deposition (FEBID) as a direct-writing technique employing a Pt/TiO2/Pt sandwich layer device configuration. Pinching in the measured current-voltage characteristics (i-v), the characteristic fingerprint of memristive behavior was clearly observed. The temperature dependence was measured for both high and low resistive states in the range from 290 K down to about 2 K, showing a stretched exponential behavior characteristic of Mott-type variable-range hopping. From this observation, a valence change mechanism of the charge transport inside the TiO2 layer can be deduced.

We have performed transport measurements on a gallium phosphide antimonide (GaPSb) film grown on GaAs. At low temperatures (T), transport is governed by three-dimensional Mott variable range hopping (VRH) due to strong localization. Therefore, electron–electron interactions are not significant in GaPSb. With increasing T, the coexistence of VRH conduction and the activated behavior with a gap of 20 meV is found. The fact that the measured gap is comparable to the thermal broadening at room temperature (approximately 25 meV) demonstrates that electrons can be thermally activated in an intrinsic GaPSb film. Moreover, the observed carrier density dependence on temperature also supports the coexistence of VRH and the activated behavior. It is shown that the carriers are delocalized either with increasing temperature or magnetic field in GaPSb. Our new experimental results provide important information regarding GaPSb which may well lay the foundation for possible GaPSb-based device applications such as in high-electron-mobility transistor and heterojunction bipolar transistors.