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"Nitride"
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Novel Composite Nitride Nanoceramics from Reaction-Mixed Nanocrystalline Powders in the System Aluminum Nitride AlN/Gallium Nitride GaN/Titanium Nitride TiN (Al:Ga:Ti = 1:1:1)
A study is presented on the synthesis of reaction-mixed nitride nanopowders in the reference system of aluminium nitride AlN, gallium nitride GaN, and titanium nitride TiN (Al:Ga:Ti = 1:1:1) followed by their high-pressure and high-temperature sintering towards novel multi-nitride composite nanoceramics. The synthesis starts with a 4 h reflux in hexane of the mixture of the respective metal dimethylamides, which is followed by hexane evacuation, and reactions of the residue in liquid ammonia at −33 °C to afford a mixed metal amide/imide precursor. Plausible equilibration towards a bimetallic Al/Ga-dimethylamide compound upon mixing of the solutions of the individual metal-dimethylamide precursors containing dimeric Al[N(CH3)2]32 and dimeric Ga[N(CH3)2]32 is confirmed by 1H- and 13CH-NMR spectroscopy in C6D6 solution. The precursor is pyrolyzed under ammonia at 800 and 950 °C yielding, respectively, two different reaction-mixed composite nitride nanopowders. The latter are subjected to no-additive high-pressure and high-temperature sintering under conditions either conservative for the initial powder nanocrystallinity (650 °C, 7.7 GPa) or promoting crystal growth/recrystallization and, possibly, solid solution formation via reactions of AlN and GaN towards Al0.5Ga0.5N (1000 and 1100 °C, 7.7 GPa). The sintered composite pellets show moderately high mechanical hardness as determined by the Vicker’s method. The starting nanopowders and resulting nanoceramics are characterized by powder XRD, Raman spectroscopy, and SEM/EDX. It is demonstrated that, in addition to the multi-nitride composite nanoceramics of hexagonal AlN/hexagonal GaN/cubic TiN, under specific conditions the novel composite nanoceramics made of hexagonal Al0.5Ga0.5N and cubic TiN can be prepared.
Journal Article
Mini Review on the Structure and Properties (Photocatalysis), and Preparation Techniques of Graphitic Carbon Nitride Nano-Based Particle, and Its Applications
Graphite carbon nitride (g-C
3
N
4
) is well known as one of the most promising materials for photocatalytic activities, such as CO
2
reduction and water splitting, and environmental remediation through the removal of organic pollutants. On the other hand, carbon nitride also pose outstanding properties and extensive application forecasts in the aspect of field emission properties. In this mini review, the novel structure, synthesis and preparation techniques of full-bodied g-C
3
N
4
-based composite and films were revealed. This mini review discussed contemporary advancement in the structure, synthesis, and diverse methods used for preparing g-C
3
N
4
nanostructured materials. The present study gives an account of full knowledge of the use of the exceptional structural and properties, and the preparation techniques of graphite carbon nitride (g-C
3
N
4
) and its applications.
Journal Article
A Comparison of the Mechanisms and Activation Barriers for Ammonia Synthesis on Metal Nitrides (Ta3N5, Mn6N5, Fe3Mo3N, Co3Mo3N)
In this study we perform a comparison of the reaction mechanism and the activation barrier for the rate-determining step in various metal nitrides (Ta3N5, Mn6N5, Fe3Mo3N, Co3Mo3N) for the ammonia synthesis reaction. The reactions are explained with simplified schematics and the energy profiles for the various reaction mechanisms are given in order to screen the catalytic activity of the catalysts for the ammonia synthesis reaction. We find that the catalytic activity ranks in the following order: Co3Mo3N > Fe3Mo3N > Ta3N5 > Mn6N5. We also find that the reaction mechanism proceeds either by a Langmuir–Hinshelwood and an Eley–Rideal/Mars–van Krevelen mechanism. This is an overview of about 10 years of computational research conducted to provide an overview of the progress established in this field of study.
Journal Article
Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides
Accurate values for polarization discontinuities between pyroelectric materials are critical for understanding and designing the electronic properties of heterostructures. For wurtzite materials, the zincblende structure has been used in the literature as a reference to determine the effective spontaneous polarization constants. We show that, because the zincblende structure has a nonzero formal polarization, this method results in a spurious contribution to the spontaneous polarization differences between materials. In addition, we address the correct choice of “improper” versus “proper” piezoelectric constants. For the technologically important III-nitride materials GaN, AlN, and InN, we determine polarization discontinuities using a consistent reference based on the layered hexagonal structure and the correct choice of piezoelectric constants, and discuss the results in light of available experimental data.
Journal Article
Improvement in mechanical properties in AlN-h-BN composites with high thermal conductivity
It is possible to improve the machinability of aluminum nitride-hexagonal boron nitride (AlN-h-BN) ceramics while maintaining high strength and high thermal conductivity. The composite ceramics with 0–30 wt% BN as secondary phase were prepared by hot pressed sintering, using yttrium oxide (Y
2
O
3
) as sintering aid. The phase composition, density, microstructure, mechanical properties, thermal conductivity, and dielectric properties were investigated. The sintering additives were favorable to purify the grain boundaries and improve densification, reacting with oxide impurities on the surface of raw material powder particles. The optimum BN content improved the flexural strength and fracture toughness of composite ceramics with 475 MPa and 4.86 MPa·m
1/2
, respectively. With increasing the amount of BN, the thermal conductivity and hardness of composites gradually decreased, but the minimum value of thermal conductivity was still 85.6 W·m
−1
·K
−1
. The relative dielectric constant and dielectric loss tangent of the samples ranged from 6.8 to 8.3 and from 2.4 × 10
−3
to 6.4 × 10
−3
, respectively, in 22–26 GHz.
Journal Article
Graphitic Carbon Nitride: A Highly Electroactive Nanomaterial for Environmental and Clinical Sensing
Graphitic carbon nitride (g-C3N4) is a two-dimensional conjugated polymer that has attracted the interest of researchers and industrial communities owing to its outstanding analytical merits such as low-cost synthesis, high stability, unique electronic properties, catalytic ability, high quantum yield, nontoxicity, metal-free, low bandgap energy, and electron-rich properties. Notably, graphitic carbon nitride (g-C3N4) is the most stable allotrope of carbon nitrides. It has been explored in various analytical fields due to its excellent biocompatibility properties, including ease of surface functionalization and hydrogen-bonding. Graphitic carbon nitride (g-C3N4) acts as a nanomediator and serves as an immobilization layer to detect various biomolecules. Numerous reports have been presented in the literature on applying graphitic carbon nitride (g-C3N4) for the construction of electrochemical sensors and biosensors. Different electrochemical techniques such as cyclic voltammetry, electrochemiluminescence, electrochemical impedance spectroscopy, square wave anodic stripping voltammetry, and amperometry techniques have been extensively used for the detection of biologic molecules and heavy metals, with high sensitivity and good selectivity. For this reason, the leading drive of this review is to stress the importance of employing graphitic carbon nitride (g-C3N4) for the fabrication of electrochemical sensors and biosensors.
Journal Article
Nitrides and carbonitrides from the lowermost mantle and their importance in the search for Earth's \lost\ nitrogen
The first finds of iron nitrides and carbonitride as inclusions in lower-mantle diamond from Rio Soriso, Brazil, are herein reported. These grains were identified and studied with the use of transmission electron microscopy (TEM), electron diffraction analysis (EDX), and electron energy loss spectra (EELS). Among nitrides, trigonal Fe3N and orthorhombic Fe2N are present. Carbonitride is trigonal Fe9(N0.8C0.2)4 These mineral phases associate with iron carbide, Fe7C3, silicon carbide, SiC, Cr-Mn-Fe and Mn-Fe oxides; the latter may be termed Mn-rich xieite. Our identified finds demonstrate a wide field of natural compositions from pure carbide to pure nitride, with multiple stoichiometries from M5(C,N)3 to M23(C,N)6 and with M/(C,N) from 1.65 to 3.98. We conclude that the studied iron nitrides and carbonitrides were formed in the lowermost mantle as the result of the infiltration of liquid metal, containing light elements from the outer core into the D\" layer, with the formation of the association: native Fe0 + iron nitrides, carbides, and transitional compounds + silicon carbide. They indicated that major reservoirs of nitrogen should be expected in the core and in the lowermost mantle, providing some solution to the problem of nitrogen balance in the Earth.
Journal Article
Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate
This study provides experimental evidence regarding the mechanism of gallium nitride (GaN) selective-area growth (SAG) on a polished plateau-patterned sapphire substrate (PP-PSS), on which aluminum nitride (AlN) buffer layers are deposited under the same deposition conditions. The SAG of GaN was only observed on the plateau region of the PP-PSS, irrespective of the number of growth cycles. Indirect samples deposited on the bare c-plane substrate were prepared to determine the difference between the AlN buffer layers in the plateau region and silicon oxide (SiO2). The AlN buffer layer in the plateau region exhibited a higher surface energy, and its crystal orientation is indicated by AlN [001]. In contrast, regions other than the plateau region did not exhibit crystallinity and presented lower surface energies. The direct analysis results of PP-PSS using transmission electron microscopy (TEM) and electron backscattered diffraction (EBSD) are similar to the results of the indirect samples. Therefore, under the same conditions, the GaN SAG of the deposited layer is related to crystallinity, crystal orientation, and surface energy.
Journal Article