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In this paper, the first demonstration of simultaneous UV written Bragg gratings and waveguides in germanium and boron‐doped planar silica is presented using a 5th harmonic solid‐state nanosecond laser operating at 213 nm wavelength. The fabrication of high‐quality gratings by using a high peak power density, yielding sufficient uniformity and without any surface damage is demonstrated. The photosensitivity of the doped silica layer is investigated by measuring the local effective refractive index of the optical modes. The written gratings are used to measure grating refractive index modulation, grating detuning bandwidth and the waveguide propagation loss with a minimum value of 0.28 ± 0.07 dB cm−1. This paper shows that this new generation of pulsed UV lasers is a promising alternative for conventional longer wavelength CW laser sources used in small spot direct grating writing in doped silica.

An optical phase‐sensitive amplifier (PSA) has the potential of low‐noise optical amplification. A frequency non‐degenerate PSA (ND‐PSA) can amplify arbitrary modulation formats including higher‐order QAM. The ND‐PSA requires a co‐propagating phase conjugated light (idler light) that has been conventionally created with an optical phase conjugator at the transmitter side. We propose a transmitter configuration using simultaneous signal generation of both a signal and its idler by double‐sideband modulation for transmission systems with ND‐PSAs. The proposed scheme provides a simple configuration with a single Mach–Zehnder amplitude modulator without optically creating the idler light. We performed experiments using 16QAM, 32QAM, and probabilistically shaped 256QAM signals. As a result, a phase‐sensitive amplification with each modulation format was successfully demonstrated using the proposed transmitter configuration.

A dispersion‐free scheme for stable multi‐access radio frequency dissemination in a fibre loop link is proposed and demonstrated. The phase jitter and dispersion‐induced power fading are suppressed simultaneously by transmitting different single‐band signals in opposite propagating directions. Experimentally, a 2.5 GHz radio frequency signal is steadily transmitted to different remote sites, with phase deviations less than 0.6 ps over 15,000 s.

We experimentally demonstrate ultra-high speed optical modulations up to 120 Gbit/s (120 Gbaud NRZ) and 220 Gbit/s (110 Gbaud PAM4) based on a lithium niobate on insulator (LNOI) modulator, which has a 3-dB electro-optical bandwidth of 56 GHz and the Vπ of 2.6 V.

We review the state of the art of graphene modulators in silicon photonics platforms. Results obtained in the fabrication of single and double layer capacitive modulators are reported showing intensity and phase modulation, operation up to 50 Gb/s and chromatic dispersion resilience.

We experimentally demonstrate silicon non-traveling-wave-electrode Mach-Zehnder modulators (NTWE-MZM) utilizing carrier depletion that have record-small footprint ([les]500μm×250μm) and comparable modulation efficiency to conventional TWE-MZM but using only 1/4-1/2 phase shifter length, benefiting from no-RF-attenuation along electrode. 25Gb/s-NRZ-eye diagram and 13GHz-electro-optic bandwidth were confirmed under single-end driving.

We successfully demonstrated a Si racetrack modulator with III-V/Si hybrid MOS optical phase shifter exhibiting VsL of 0.064 Vcm. Compared with a MZI modulator with the same phase shifter, the racetrack modulator reduced the energy consumption by three quarters without expense of the modulation bandwidth.

We present a monolithically integrated route-and-select optical switch comprising Mach-Zehnder interferometers and electroabsorption modulator gate array; realized on SI-InP substrate to isolate the active sections without epitaxial regrowth. Using a flip-chip bonded HEMT driver operated with LVDS input signals, 0.64-ns optical switching is demonstrated.

We demonstrated a low voltage driving 110 Gbit/s OOK transmitter using hybrid silicon modulator with efficient EO polymer. It reaches BER below HD-FEC threshold just with a drive voltage of 1.4 Vpp. It has also shown a good thermal operation at temperature up to 100 °C.

The impact of polarization dependent loss (PDL) on the bit-wise achievable information rate is investigated for probabilistically shaped and uniform DP 64-QAM. The implications of the per-span PDL being uniformly distributed are assessed and the relationship between information rate and resilience to PDL is investigated.