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An optical phase‐sensitive amplifier (PSA) has the potential of low‐noise optical amplification. A frequency non‐degenerate PSA (ND‐PSA) can amplify arbitrary modulation formats including higher‐order QAM. The ND‐PSA requires a co‐propagating phase conjugated light (idler light) that has been conventionally created with an optical phase conjugator at the transmitter side. We propose a transmitter configuration using simultaneous signal generation of both a signal and its idler by double‐sideband modulation for transmission systems with ND‐PSAs. The proposed scheme provides a simple configuration with a single Mach–Zehnder amplitude modulator without optically creating the idler light. We performed experiments using 16QAM, 32QAM, and probabilistically shaped 256QAM signals. As a result, a phase‐sensitive amplification with each modulation format was successfully demonstrated using the proposed transmitter configuration.

We propose a crosstalk-aware wavelength-detuning scheme exploiting wavelength reusability to overcome the non-optimal inband crosstalk that limits all-to-all AWGR-based optical interconnections. Experimental validation is demonstrated employing an 8×8 O-band Si-AWGR where simultaneous error-free transmission of 4 pairs of identical signals at 25 Gb/s is achieved.

We show 100 Gbaud PAM4 400 meters link with performance below the 7% HD-FEC limit of 5×10-3 without optical amplification and post-equalization. We also show 300 Gbps PAM8 line rate transmission over 400 meters of SSMF in C-band.

An innovative wafer-scale micro-optical solution for compact 90° optical interconnects is presented. In particular, micro-optical structures were designed and fabricated, which redirect the light using total internal reflection (TIR). The micro-optical interconnects consist of either a quarter ball lens (Q-lens) or a 45° micro-prism, both fabricated using wafer-scale UV imprint. Finally, the folded micro-optical elements are combined with integrated self-alignment structures, which easily enable passive fiber self-alignment and packaging.

A coupled multicore fibre with 165 cores is designed and fabricated. The fibre has a peak modal bandwidth of 8.4 GHz·km in the 850 nm window. Error free 25 Gb/s transmission over 150 m of the fibre is demonstrated using a VCSEL based transceiver.

We demonstrate the first all-optical feed-forward neural networks constituted by two full photonic layers of neurons based on SOAs with Broadcast and Weighting protocol. The impact of optical nonlinear function is studied and signal processing with 10 Gbit/s binary sequences is presented which results in 0.21 error.

We review the interplay among innovations in optical technology, and system and network architectures that help intra, and inter, data-center connectivity to more cost-effectively scale to the \"cloud-era\" requirements for flatter networks, with more flexible provisioning, and higher capacity.

A performance comparison among some promising low-complexity modulation formats suitable for optical short reach interconnects is presented. Bit error probability, electrical SNR and optical power penalty for different sets of operational parameters has been investigated through a complete analysis of the behavior of each format. Simulation results reveal that, among the selected modulation formats, while DBPSK and DQPSK are advantaged in terms of electrical SNR, this advantage is lost in terms of optical power. Among the formats requiring a lower technological complexity, the most resilient to chromatic dispersion turn out to be PAM-4 and CAPS, which outperforms PAM-4 as regards the power budget.

Silicon photonics enables the fabrication of on-chip, ultrahigh-bandwidth optical networks that are critical for the future of microelectronics 1 , 2 , 3 . Several optical components necessary for implementing a wavelength division multiplexing network have been demonstrated in silicon. However, a fully integrated multiple-wavelength source capable of driving such a network has not yet been realized. Optical amplification, a necessary component for lasing, has been achieved on-chip through stimulated Raman scattering 4 , 5 , parametric mixing 6 and by silicon nanocrystals 7 or nanopatterned silicon 8 . Losses in most of these structures have prevented oscillation. Raman oscillators have been demonstrated 9 , 10 , 11 , but with a narrow gain bandwidth that is insufficient for wavelength division multiplexing. Here, we demonstrate the first monolithically integrated CMOS-compatible source by creating an optical parametric oscillator formed by a silicon nitride ring resonator on silicon. The device can generate more than 100 new wavelengths with operating powers below 50 mW. This source can form the backbone of a high-bandwidth optical network on a microelectronic chip. A monolithically integrated CMOS-compatible source is demonstrated using an optical parametric oscillator based on a silicon nitride ring resonator on silicon. Generating more than 100 wavelengths simultaneously and operating at powers below 50 mW, scientists say that it may form the basis of an on-chip high-bandwidth optical network.

Warehouse scale datacenters running complex applications involving many servers require low latency interconnects to avoid excessive delays to the user. The SPINet(Scalable Photonic Interconnection Network) architecture can dynamically support ultralow latencies for packetized light loads and high-bandwidth long flows under heavy traffic.