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This paper presents a Basic Optical Switching (BOS) architecture for scalable, terabit-level packet switching using incoherent Optical Code Division Multiple Access (OCDMA). The BOS system diverges from label-based switching by directly encoding user data into optical orthogonal codes (OOCs), eliminating the need for label lookup or centralized control. Using passive components such as star couplers and tapped delay line encoders, BOS offers a low-complexity solution suitable for intra-domain and short-reach optical networks. We analyze BER performance under ideal (interference-limited) and non-ideal (noise-inclusive) conditions using probabilistic and Gaussian noise models. The results show that BOS supports aggregate capacities up to 1 Tbps with 20 users at 50 Gbps each while maintaining a BER of 10 −12 . The simplicity of the architecture and the asynchronous operation make it a viable solution for edge/core-edge optical switching fabrics.

Optical packet switching (OPS) exhibits the ability to be utilized as a data transmission technique for next-generation. The core router/switch plays a significant role in packet routing and buffering in OPS. Arrayed waveguide grating (AWG) is realized as a promising core element for fast optical switching, with its intrinsic capacity to achieve wavelength routing of different wavelengths in parallel. This paper proposes an AWG-based add-drop optical packet switch, including a hybrid buffer, to resolve contention among packets. In a hybrid buffer, both optical and electronic buffers are used for the buffering of contending packets. AWGs are affected by crosstalk that can significantly impair system operation. The physical layer analysis is discussed in the presence of crosstalk, and the performance of the switch is evaluated in terms of bit error rate. The desired minimum input power is calculated for the switch’s correct operation for both optical buffer and electronic buffer. Finally, the packet loss probability (PLP) of the hybrid buffer is examined under various buffering conditions. Results reveal that with the increase in the optical power of the input signal, crosstalk power increases linearly for optical and electronic buffers. The increased crosstalk power is higher for electronic buffers than the optical buffer. The use of electronic memory in the hybrid buffer allows the hybrid buffer to increase its buffer size thus, reducing the PLP.

We report the experimental and theoretical study of the diffraction patterns (DPs) and thermal properties of Sudan III. DPs are used in the calculation of the Sudan III nonlinear refractive index (NLRI), n 2 . As high as n 2 = 7.69 ×10 -6 cm 2 /W is obtained. The study of the Sudan III thermal conductivity, TC, shows the reduction of the TC against the increase of the Sudan III temperature. The property, all-optical switching (AOS), is studied in details, both static and dynamic ones, using two, cw, visible, single mode laser beams of wavelengths 473 and 635 nm.

Ultrafast all-optical control has been a subject of wide-spread attention as a method of manipulating optical fields using light excitation on extremely short time scales. As a fundamental form of ultrafast all-optical control, all-optical switching has achieved sub-picosecond switch speeds in the visible, infrared, and terahertz spectral regions. However, due to the lack of suitable materials, ultrafast all-optical control in the ultraviolet range remains in its early stages. We demonstrate sub-picosecond all-optical switching in the ultraviolet wavelength by designing a Si -ITO Fabry–Pérot resonance aligns with the edge of the interband transition region of ITO. The response time of 500 fs achieved at a pump fluence as low as 0.17 mJ/cm . Notably, unlike conventional binary switches (0, 1), this biphasic all-optical switch enables the modulation of optical intensity with positive, zero, and negative Δ (0, 1, −1) at the same wavelength, all achieved with a switching speed of 680 fs at a pump fluence of 0.45 mJ/cm . This work establishing a new pathway for all-optical control in the ultraviolet spectrum, the biphasic switch provides an extra degree of freedom for all-optical modulation.

The development of optical interconnect techniques greatly expands the communication bandwidth and decreases the power consumption at the same time. It provides a prospective solution for both intra-chip and inter-chip links. Herein reported is an integrated wavelength-division multiplexing (WDM)-compatible multimode optical switching system-on-chip (SoC) for large-capacity optical switching among processors. The interfaces for the input and output of the processor signals are electrical, and the on-chip data transmission and switching process are optical. It includes silicon-based microring optical modulator arrays, mode multiplexers/de-multiplexers, optical switches, microring wavelength de-multiplexers and germanium-silicon high-speed photodetectors. By introducing external multi-wavelength laser sources, the SoC achieved the function of on-chip WDM and mode-division multiplexing (MDM) hybrid-signal data transmission and switching on a standard silicon photonics platform. As a proof of concept, signals with a 25 Gbps data rate are implemented on each microring modulator of the fabricated SoC. We illustrated 25 × 3 × 2 Gbps on-chip data throughput with two-by-two multimode switching functionality through implementing three wavelength-channels and two mode-channel hybrid-multiplexed signals for each multimode transmission waveguide. The architecture of the SoC is flexible to scale, both for the number of supported processors and the data throughput. The demonstration paves the way to a large-capacity multimode optical switching SoC.

In this work OR1(E1,6E) -1,7-bis (4-propyloxy phenyl) hepta-1,6-diene-3,5 dione compound is synthesized. The compound has been characterized via computational technique by studying the molecule’s electronic structures through calculating its HOMO and LUMO energies, and its band gap energy (E HOMO -E LUMO ). The nonlinear refractive index (NLRI) of the solution of OR1 compound in DMF solvent is determined using diffraction patterns (DPs) which resulted when a continuous wave laser beam of wavelength 473 nm traversed the compound solution in a glass cell of 1 mm thickness. By counting the number of rings under maximum beam input power, the NLRI of value 10 − 6 cm 2 /W resulted. The NLRI is calculated once more via the Z-scan technique and a value of 0.25 × 10 − 7 cm 2 /W is obtained. The vertical convection current in the OR1 compound solution appears to be responsible for the asymmetries noticed in the DPs. The temporal variation of each DP is noticed together with the evolution of DPs against beam input power. DPs are numerically simulated based on the Fresnel-Kirchhoff integral with good accord compared to the experimental findings. Dynamic and static all-optical switching in the OR1 compound using two laser beams (473 and 532 nm ) is tested successfully.

The development of high‐speed and high‐performance optical switches has been a long‐standing issue in the field of photonics. This paper introduces a pioneering time‐resolved spectroscopy‐based approach for realizing photon‐induced ultrafast terahertz (THz) modulation within an electrical split‐ring resonator (SRR) via photoexcitation, rather than relaxation dynamics, in a silicon‐based indirect‐bandgap material. Two competitive effects (shorting of LC circuit and metallization of substrate) occur during photon‐induced THz modulation. The tradeoff between these two effects enables high‐speed optical switching via different time scales of the photoexcitation processes—THz‐optical cooperative effect and phonon‐assisted electron transition. THz‐optical cooperative photoexcitation, causing a shorting effect within the LC circuit, has been observed in the SRR gap, whose size typically exceeds that facilitating impact ionization (IMI). Notably, a remarkably short THz switching time of 1.3 ps has been achieved via only photoexcitation and with a high‐performance transmission intensity modulation depth of over 500%. In addition, active temporal waveform control down to a sub‐cycle pulse has been successfully demonstrated. The proposed approach suggests a new route for constructing high‐speed and efficient THz dynamic photonic devices with potential applications in temporal waveform control. This study introduces a novel time‐resolved spectroscopy approach enabling ultrafast terahertz (THz) modulation in silicon‐based optical switches. Utilizing photon‐induced processes, it achieves a record THz switching time of 1.3 ps and a modulation depth over 500%. The method demonstrates active sub‐cycle pulse control, offering a new pathway for high‐speed, efficient THz photonic devices.

The need for high-density, higher-speed memory devices has increased tremendously over the last decade. With scaling and integration capacity of traditional memories reaching its limits, new types of memory technologies have come up in the semiconductor market. These new technologies, i.e. non-volatile memories, aim to solve traditional charge-based memory limitations like low dynamic power, higher BW performance, high density and low scaling cost and also aim to solve low-endurance, process issues. Non-volatile memories play an essential role in transforming the semiconductor industry for future use. This paper aims to describe characteristics of different types of non-volatile memories, ‘available’ and ‘emerging’, in the semiconductor industry. Some recent developments are covered as a part of study in the application of all-optical-enabled MTJ, spin-polarized currents, phase conversion and magnetism in the logic and memory domain. In addition, characteristics of different emerging memories such as all-optical switching MTJ, ReRAM, PCM, SOT-MRAM, STT-MRAM, etc. have been discussed on basis of various performance parameters. Non-volatile memories mentioned above not only provides retention period of over 10 years but also ensures endurance over ~ 10 10 cycles. The read and write operation latency in these memories is between 1 and 7 ns range which is much better as compared to charge-based memories. The literature comparison analysis along with experimental results summary has been presented in this paper.

Research into all optical network （AON） technology has been ongoing over the past decade, and new features are constantly being developed. The advantages of AON include large-bandwidth provisioning, low- latency transmission and low energy consumption. The basic concept underlying AON is transmission of data signals entirely through the optical domain from source to destination nodes, with no optical-electrical-optical （O-E-O） conversion at intermediate nodes. The technologies used to implement AON have undergone a series of evolutions, which encompass time division multiplexing （TDM）, frequency division multiplexing （FDM）, and space division multiplexing （SDM）. Multi-dimensional AON （MD-AON）, which leads the trend of AON＇s future architecture, provides a vibrant state for emerging applications such as cloud computing and Internet of Things （loT）. In this article, we review the evolution of AON architectures based on the different all optical switching and multiplexing technologies （i.e., TDM, FDM, and SDM）, which is one of the main areas of focus in this article. The other main area is detailed discussion of implementations such as data plane and control plane technologies as well as resource optimization technologies for realizing AON. We also introduce several AON testbeds with their compositions and functions, and some potential application scenarios that can be implemented based on these testbeds

Microstructured all-optical switching, possessing the unique function of light controlling light, is an important part of the on-chip ultra-fast optical connectivity network and integrated logic computing chip. Microstructured all-optical switching has attracted extensive research interest, the latest great developments of which have also yielded progress in nanophotonics, nonlinear optics, optical communications, and integrated optics, etc. The emergence of two-dimensional materials with good third-order optical nonlinearity provides an important driving force for the improvement of all-optical switches. This paper reviews the implementation principles, novel configurations, improved performance indexes, and research progress based on different two-dimensional materials for micro/nano all-optical switching. Not only is a systematic discussion of the current state provided, but also, a brief outlook is afforded on the remaining challenges in the pursuit of the application of practical on-chip microstructured all-optical switching that is based on two-dimensional materials.