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19,937
result(s) for
"Optoelectronic devices"
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Molecular beam epitaxy : from research to mass production
2013,2012
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum. MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. Condenses fundamental science of MBE into a modern reference, speeding up literature reviewDiscusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
Photodetection with Active Optical Antennas
2011
Nanoantennas are key optical components for light harvesting; photodiodes convert light into a current of electrons for photodetection. We show that these two distinct, independent functions can be combined into the same structure. Photons coupled into a metallic nanoantenna excite resonant plasmons, which decay into energetic, \"hot\" electrons injected over a potential barrier at the nanoantenna-semiconductor interface, resulting in a photocurrent. This dual-function structure is a highly compact, wavelength-resonant, and polarization-specific light detector, with a spectral response extending to energies well below the semiconductor band edge.
Journal Article
Efficient Hybrid Solar Cells Based on Meso-Superstructured Organometal Halide Perovskites
by
Murakami, Takurou N.
,
Lee, Michael M.
,
Teuscher, Joël
in
Aluminum oxide
,
Applied sciences
,
Coating
2012
The energy costs associated with separating tightly bound excitons (photoinduced electron-hole pairs) and extracting free charges from highly disordered low-mobility networks represent fundamental losses for many low-cost photovoltaic technologies. We report a low-cost, solution-processable solar cell, based on a highly crystalline perovskite absorber with intense visible to near-infrared absorptivity, that has a power conversion efficiency of 10.9% in a single-junction device under simulated full sunlight. This \"meso-superstructured solar cell\" exhibits exceptionally few fundamental energy losses; it can generate open-circuit photovoltages of more than 1.1 volts, despite the relatively narrow absorber band gap of 1.55 electron volts. The functionality arises from the use of mesoporous alumina as an inert scaffold that structures the absorber and forces electrons to reside in and be transported through the perovskite.
Journal Article
Porphyrin-Sensitized Solar Cells with Cobalt (II/III)-Based Redox Electrolyte Exceed 12 Percent Efficiency
by
Lee, Hsuan-Wei
,
Yi, Chenyi
,
Chandiran, Aravind Kumar
in
Air masses
,
Applied sciences
,
Biophysics
2011
The iodide/triiodide redox shuttle has limited the efficiencies accessible in dye-sensitized solar cells. Here, we report mesoscopic solar cells that incorporate a Co (II/III) tris(bipyridyl)—based redox electrolyte in conjunction with a custom synthesized donor-π-bridge-acceptor zinc porphyrin dye as sensitizer (designated YD2-o-C8). The specific molecular design of YD2-o-C8 greatly retards the rate of interfacial back electron transfer from the conduction band of the nanocrystalline titanium dioxide film to the oxidized cobalt mediator, which enables attainment of strikingly high photovoltages approaching 1 volt. Because the YD2-o-C8 porphyrin harvests sunlight across the visible spectrum, large photocurrents are generated. Cosensitization of YD2-o-C8 with another organic dye further enhances the performance of the device, leading to a measured power conversion efficiency of 12.3% under simulated air mass 1.5 global sunlight.
Journal Article
Graphene photodetectors for high-speed optical communications
by
Xia, Fengnian
,
Avouris, Phaedon
,
Mueller, Thomas
in
639/624/1075/187
,
639/624/1075/401
,
639/624/399/918
2010
Although silicon has dominated solid-state electronics for more than four decades, a variety of other materials are used in photonic devices to expand the wavelength range of operation and improve performance. For example, gallium-nitride based materials enable light emission at blue and ultraviolet wavelengths
1
, and high index contrast silicon-on-insulator facilitates ultradense photonic devices
2
,
3
. Here, we report the first use of a photodetector based on graphene
4
,
5
, a two-dimensional carbon material, in a 10 Gbit s
−1
optical data link. In this interdigitated metal–graphene–metal photodetector, an asymmetric metallization scheme is adopted to break the mirror symmetry of the internal electric-field profile in conventional graphene field-effect transistor channels
6
,
7
,
8
,
9
, allowing for efficient photodetection. A maximum external photoresponsivity of 6.1 mA W
−1
is achieved at a wavelength of 1.55 µm. Owing to the unique band structure of graphene
10
,
11
and extensive developments in graphene electronics
12
,
13
and wafer-scale synthesis
13
, graphene-based integrated electronic–photonic circuits with an operational wavelength range spanning 300 nm to 6 µm (and possibly beyond) can be expected in the future.
A graphene-based photodetector with unprecedented photoresponsivity and the ability to perform error-free detection of 10 Gbit s
−1
s data streams is demonstrated. The results suggest that graphene-based photonic devices have a bright future in telecommunications and other optical applications.
Journal Article
A Universal Method to Produce Low-Work Function Electrodes for Organic Electronics
by
Khan, Talha M.
,
Sojoudi, Hossein
,
Marder, Seth R.
in
Amines
,
Application fields
,
Applied sciences
2012
Organic and printed electronics technologies require conductors with a work function that is sufficiently low to facilitate the transport of electrons in and out of various optoelectronic devices. We show that surface modifiers based on polymers containing simple aliphatic amine groups substantially reduce the work function of conductors including metals, transparent conductive metal oxides, conducting polymers, and graphene. The reduction arises from physisorption of the neutral polymer, which turns the modified conductors into efficient electron-selective electrodes in organic optoelectronic devices. These polymer surface modifiers are processed in air from solution, providing an appealing alternative to chemically reactive low-work function metals. Their use can pave the way to simplified manufacturing of low-cost and large-area organic electronic technologies.
Journal Article