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The trap states at both the upper and bottom interfaces of perovskite layers significantly impact non‐radiative carrier recombination. The widely used solvent‐based passivation methods result in the disordered distribution of surface components, posing challenges for the commercial application of large‐area perovskite solar cells (PSCs). To address this issue, a novel NH3 gas‐assisted all‐inorganic dual‐interfaces passivation strategy is proposed. Through the gas treatment of the perovskite surface, NH3 molecules significantly enhanced the iodine vacancy formation energy (1.54 eV) and bonded with uncoordinated Pb2+ to achieve non‐destructive passivation. Meanwhile, the reduction of the film defect states is accompanied by a decrease in the work function, which promotes carrier transport between the interface. Further, a stable passivation layer is constructed to manage the bottom interfacial defects using inorganic potassium tripolyphosphate (PT), whose ─P═O group effectively mitigated the charged defects and lowered the carrier transport barriers and nucleation barriers of PVK, while the gradient distribution of K+ improved the crystalline quality of PVK film. Based on the dual‐interface synergistic effect, the optimal MA‐contained PSCs with an effective area of 0.1 cm2 achieved an efficiency of 24.51% and can maintain 90% of the initial value after aging (10−20% RH and 20 °C) for 2000 h. A novel inorganic molecule dual interface passivation strategy is designed by introducing non‐destructive pure NH3 gas and potassium tripolyphosphate at the upper and bottom interface. The optimized PSC achieved an excellent power conversion efficiency (PCE) of 24.51%, with significant FF (81.88%) and VOC (1.229V). This PCE value is the highest reported efficiency for MA‐contained PSCs employing gas‐passivation so far.

Narrow-bandgap tin–lead (Sn–Pb) perovskite solar cells (PSCs) are essential for high-performance tandem photovoltaics, yet their operational stability and efficiency suffer from spontaneous Sn[sup.2+] oxidation, interfacial defects, and non-radiative recombination. Current passivation strategies often provide only a single modification mode and struggle to adequately stabilize Sn[sup.2+] without introducing charge-transport barriers. Here, we introduce morpholine acetate (MPAC) as a novel interfacial passivator to achieve synergistic chemical and field-effect passivation in Sn–Pb perovskites. The acetate group of MPAC coordinates with undercoordinated metal cations, suppressing Sn[sup.2+] oxidation and minimizing defect states. Simultaneously, the morpholine moiety forms an interfacial dipole layer that aligns energy levels to facilitate charge extraction. Consequently, MPAC-modified PSCs achieve a champion power conversion efficiency of 22.64%. Under continuous AM 1.5G illumination without optical filters (xenon lamp, 65 °C, open-circuit conditions), the unencapsulated devices maintain over 90% of their initial efficiency after 192 h, providing a promising route to balance performance and durability.

Lead sulfide (PbS) colloidal quantum dot (CQD) photodiodes integrated with silicon‐based readout integrated circuits (ROICs) offer a promising solution for the next‐generation short‐wave infrared (SWIR) imaging technology. Despite their potential, large‐size CQD photodiodes pose a challenge due to high dark currents resulting from surface states on non‐passivated (100) facets and trap states generated by CQD fusion. In this work, we present a novel approach to address this issue by introducing double‐ended ligands that supplementally passivate (100) facets of halide‐capped large‐size CQDs, leading to suppressed bandtail states and reduced defect concentration. Our results demonstrate that the dark current density is highly suppressed by about an order of magnitude to 9.6 nA cm−2 at −10 mV, which is among the lowest reported for PbS CQD photodiodes. Furthermore, the performance of the photodiodes is exemplary, yielding an external quantum efficiency of 50.8% (which corresponds to a responsivity of 0.532 A W−1) and a specific detectivity of 2.5 × 1012 Jones at 1300 nm. By integrating CQD photodiodes with CMOS ROICs, the CQD imager provides high‐resolution (640 × 512) SWIR imaging for infrared penetration and material discrimination. This work explores the potential of PbS colloidal quantum dots (CQDs) directly integrated with CMOS circuits for high‐resolution short‐wave infrared (SWIR) imaging. By using double‐ended ligands on (100) facets of CQDs, suppression of bandtails and defects is achieved. The prepared CQD photodiodes exhibit excellent performance with low dark current and high responsivity, providing a promising solution for SWIR imaging applications.

Methoxy‐functionalized triphenylamine‐imidazole derivatives that can simultaneously work as hole transport materials (HTMs) and interface‐modifiers are designed for high‐performance and stable perovskite solar cells (PSCs). Satisfying the fundamental electrical and optical properties as HTMs of p‐i‐n planar PSCs, their energy levels can be further tuned by the number of methoxy units for better alignment with those of perovskite, leading to efficient hole extraction. Moreover, when they are introduced between perovskite photoabsorber and low‐temperature solution‐processed NiO x interlayer, widely featured as an inorganic HTM but known to be vulnerable to interfacial defect generation and poor contact formation with perovskite, nitrogen and oxygen atoms in those organic molecules are found to work as Lewis bases that can passivate undercoordinated ion‐induced defects in the perovskite and NiO x layers inducing carrier recombination, and the improved interfaces are also beneficial to enhance the crystallinity of perovskite. The formation of Lewis adducts is directly observed by IR, Raman, and X‐ray photoelectron spectroscopy, and improved charge extraction and reduced recombination kinetics are confirmed by time‐resolved photoluminescence and transient photovoltage experiments. Moreover, UV‐blocking ability of the organic HTMs, the ameliorated interfacial property, and the improved crystallinity of perovskite significantly enhance the stability of PSCs under constant UV illumination in air without encapsulation.

Perovskite solar cells have made significant strides in recent years. However, there are still challenges in terms of photoelectric conversion efficiency and long-term stability associated with perovskite solar cells. The presence of defects in perovskite materials is one of the important influencing factors leading to subpar film quality. Adopting additives to passivate defects within perovskite materials is an effective approach. Therefore, we first discuss the types of defects that occur in perovskite materials and the mechanisms of their effect on performance. Then, several types of additives used in perovskite solar cells are discussed, including ionic compounds, organic molecules, polymers, etc. This review provides guidance for the future development of more sustainable and effective additives to improve the performance of solar cells.

Molecular passivation is a prominent approach for improving the performance and operation stability of halide perovskite solar cells (HPSCs). Herein, we reveal discernible effects of diammonium molecules with either an aryl or alkyl core onto Methylammonium-free perovskites. Piperazine dihydriodide (PZDI), characterized by an alkyl core-electron cloud-rich-NH terminal, proves effective in mitigating surface and bulk defects and modifying surface chemistry or interfacial energy band, ultimately leading to improved carrier extraction. Benefiting from superior PZDI passivation, the device achieves an impressive efficiency of 23.17% (area ~1 cm 2 ) (low open circuit voltage deficit ~0.327 V) along with superior operational stability. We achieve a certified efficiency of ~21.47% (area ~1.024 cm 2 ) for inverted HPSC. PZDI strengthens adhesion to the perovskite via -NH 2 I and Mulliken charge distribution. Device analysis corroborates that stronger bonding interaction attenuates the defect densities and suppresses ion migration. This work underscores the crucial role of bifunctional molecules with stronger surface adsorption in defect mitigation, setting the stage for the design of charge-regulated molecular passivation to enhance the performance and stability of HPSC. Molecular passivation is promising for improving the performance and operation stability of perovskite solar cells. Here, authors employ piperazine dihydriodide to strengthen adhesion to MA-free perovskite via −NH 2 I and Mulliken charge distribution, realizing charge-regulated molecular passivation.

In contrast to conventional ( n – i – p ) perovskite solar cells (PSCs), inverted ( p – i – n ) PSCs offer enhanced stability and integrability with tandem solar cell architectures, which have garnered increasing interest. However, p – i – n cells suffer from energy level misalignment with transport layers, imbalanced transport of photo-generated electrons and holes, and significant defects with the perovskite films. Here we introduce tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane (3TPYMB), a nonionic n -type molecule that, through hydrogen bonding and Lewis acid–base reactions with perovskite surfaces or grain boundaries, enables in situ modulation of perovskite energetics, effectively mitigating the key challenges of p – i – n PSCs. The p – i – n PSCs incorporating 3TPYMB achieve a certified quasi-steady-state power conversion efficiency of 24.55 ± 0.33%, with a reverse scan efficiency of 25.58%. They also exhibit exceptional stability, with unencapsulated devices retaining 97.8% of their initial efficiency after 1,800 h of continuous operation at maximum power point under N 2 atmosphere, 1 sun illumination and 60 °C conditions. The introduction of 3TPYMB, an n -type molecule into inverted perovskite solar cells, enables a power conversion efficiency of 25.6%, with devices maintaining up to 98% of the initial efficiency after 1,800 h of operation.

Highlights Benzamidine derivatives are utilized to differentiate between 2D passivation and amorphous passivation. Introducing an n-type 2D passivation layer enhances the charge extraction and transportation and reduces the interface recombination in inverted perovskite solar cells. The intramolecular charge of organic ligands is critical for the formation of crystalline 2D capping layers on 3D perovskite layers. The long-term stability of inverted perovskite solar cells is improved owing to hydrophobic sealing of 3D perovskite via crystalline 2D capping. The introduction of two-dimensional (2D) perovskite layers on top of three-dimensional (3D) perovskite films enhances the performance and stability of perovskite solar cells (PSCs). However, the electronic effect of the spacer cation and the quality of the 2D capping layer are critical factors in achieving the required results. In this study, we compared two fluorinated salts: 4-(trifluoromethyl) benzamidine hydrochloride (4TF-BA·HCl) and 4-fluorobenzamidine hydrochloride (4F-BA·HCl) to engineer the 3D/2D perovskite films. Surprisingly, 4F-BA formed a high-performance 3D/2D heterojunction, while 4TF-BA produced an amorphous layer on the perovskite films. Our findings indicate that the balanced intramolecular charge polarization, which leads to effective hydrogen bonding, is more favorable in 4F-BA than in 4TF-BA, promoting the formation of a crystalline 2D perovskite. Nevertheless, 4TF-BA managed to improve efficiency to 24%, surpassing the control device, primarily due to the natural passivation capabilities of benzamidine. Interestingly, the devices based on 4F-BA demonstrated an efficiency exceeding 25% with greater longevity under various storage conditions compared to 4TF-BA-based and the control devices.

Interest in germanium electronic devices is experiencing a comeback thanks to their suitability for a wide range of new applications, like CMOS transistors, quantum technology or infrared photonics. Among these applications, Ge-based thermophotovoltaic converters could become the backbone of thermo-electrical batteries. However, these devices are still far from the efficiency threshold needed for industrial deployment, with surface recombination as the main limiting factor for the material. In this work, we discuss the main passivation techniques developed for germanium photovoltaic and thermophotovoltaic devices, summarizing their main advantages and disadvantages. The analysis reveals that surface recombination velocities as low as 2.7 cm/s and 1.3 cm/s have already been reported for p-type and n-type germanium, respectively, although improving surface recombination velocities below 100 cm/s would result in marginal efficiency gains. Therefore, the main challenge for the material is not reducing this parameter further but developing robust and reliable processes for integrating the current techniques into functional devices.

Organic-inorganic halide perovskite solar cells (PSCs) have attracted much attention in recent years due to their simple manufacturing process, low cost, and high efficiency. So far, all efficient organic-inorganic halide PSCs are mainly made of polycrystalline perovskite films. There are transmission barriers and high-density defects on the surface, interface, and grain boundary of the films. Among them, the deep-level traps caused by specific charged defects are the main non-radiative recombination centers, which is the most important factor in limiting the photoelectric conversion efficiency of PSCs devices to the Shockley-Queisser (S-Q) theoretical efficiency limit. Therefore, it is imperative to select appropriate passivation materials and passivation strategies to effectively eliminate defects in perovskite films to improve their photovoltaic performance and stability. There are various passivation strategies for different components of PSCs, including interface engineering, additive engineering, antisolvent engineering, dopant engineering, etc. In this review, we summarize a large number of defect passivation work to illustrate the latest progress of different types of passivators in regulating the morphology, grain boundary, grain size, charge recombination, and defect density of states of perovskite films. In addition, we discuss the inherent defects of key materials in carrier transporting layers and the corresponding passivation strategies to further optimize PSCs components. Finally, some perspectives on the opportunities and challenges of PSCs in future development are highlighted.