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Electron heating at collisionless shocks in space is a combination of adiabatic heating due to large‐scale electric and magnetic fields and non‐adiabatic scattering by high‐frequency fluctuations. The scales at which heating happens hints to what physical processes are taking place. In this letter, we study electron heating scales with data from the Magnetospheric Multiscale (MMS) spacecraft at Earth's quasi‐perpendicular bow shock. We utilize the tight tetrahedron formation and high‐resolution plasma measurements of MMS to directly measure the electron temperature gradient. From this, we reconstruct the electron temperature profile inside the shock ramp and find that the electron temperature increase takes place on ion or sub‐ion scales. Further, we use Liouville mapping to investigate the electron distributions through the ramp to estimate the deHoffmann‐Teller potential and electric field. We find that electron heating is highly non‐adiabatic at the high‐Mach number shocks studied here. Plain Language Summary Shock waves appear whenever a supersonic medium, such as a plasma, encounters an obstacle. The plasma, which consists of charged ions and free electrons, is heated by the shock wave through interactions with the electromagnetic fields. In this work, we investigate how electrons are heated at plasma shocks. A key parameter to electron heating is the thickness of the layer where the heating takes place. Here, we use observations from the four Magnetospheric Multiscale spacecraft that regularly cross the standing bow shock that forms when the supersonic plasma, known as the solar wind, encounters Earth's magnetic field. We find that the thickness of the shock is larger than previously reported and is on the scales where ion physics dominate. We also find that the electron heating deviates significantly from simple adiabatic heating. Key Points Using multipoint data from Magnetospheric Multiscale, we find that electron heating takes place on ion scales in the quasi‐perpendicular shock ramp We show that the time series of the temperature does not represent the spatial profile due to varying shock ramp speed Electron distributions in the ramp and downstream of the shock show that electrons are heated non‐adiabatically

Spin orbit torque (SOT) provides an efficient way to significantly reduce the current required for switching nanomagnets. However, SOT generated by an in-plane current cannot deterministically switch a perpendicularly polarized magnet due to symmetry reasons. On the other hand, perpendicularly polarized magnets are preferred over in-plane magnets for high-density data storage applications due to their significantly larger thermal stability in ultrascaled dimensions. Here, we show that it is possible to switch a perpendicularly polarized magnet by SOT without needing an external magnetic field. This is accomplished by engineering an anisotropy in the magnets such that the magnetic easy axis slightly tilts away from the direction, normal to the film plane. Such a tilted anisotropy breaks the symmetry of the problem and makes it possible to switch themagnet deterministically. Using a simple Ta/CoFeB/MgO/Ta heterostructure, we demonstrate reversible switching of the magnetization by reversing the polarity of the applied current. This demonstration presents a previously unidentified approach for controlling nanomagnets with SOT.

Perpendicular exchange bias (PEB) is highly desirable for the development of advanced nanoscale spintronics devices. The attainment of conventional PEB typically involves a field-cooling process through the Néel temperature of antiferromagnetic materials. In this study, we demonstrated the realization of spontaneous PEB (SPEB) in IrMn/[Co/Pt] 3 multilayers utilizing isothermal crystallization of IrMn at room temperature (RT). And the SPEB generated isothermally at IrMn/Co interface does not destroy the perpendicular magnetic anisotropy of the multilayers. The magnetic domains of the multilayers captured by Kerr microscopy after different magnetization time also indicate the generation of SPEB. The magnitude of SPEB can be controllable by varying the isothermal magnetization time and the annealing temperature of IrMn. The relationship between magnetization waiting time and SPEB reveals that even slight isothermal crystallization can generate substantial SPEB. Our results provide an alternative approach to isothermally generate PEB in IrMn/[Co/Pt] 3 multilayers at RT.

In order to realize a perpendicular exchange bias for applications, a robust and tunable exchange bias is required for spintronic applications. Here, we show the perpendicular exchange energy (PEE) in the TbxCo100−x/Cu/[Co/Pt]2 heterostructures. The structure consists of amorphous ferrimagnetic Tb–Co alloy films and ferromagnetic Co/Pt multilayers. The dependence of the PEE on the interlayer thickness of Cu and the composition of Tb–Co were analyzed. We demonstrate that the PEE can be controlled by changing the Cu interlayer thickness of 0.2 < tCu < 0.3 (nm). We found that PEE reaches a maximum value (σPw = 1 erg/cm2) at around x = 24%. We, therefore, realize the mechanism of PEE in the TbxCo100−x/Cu/[Co/Pt]2 heterostructures. We observe two competing mechanisms—one leading to an increase and the other to a decrease—which corresponds to the effect of Tb content on saturation magnetization and the coercivity of heterostructures. Sequentially, our findings show possibilities for both pinned layers in spintronics and memory device applications by producing large PEE and controlled PEE by Cu thickness, based on TbxCo100−x/Cu/[Co/Pt]2 heterostructures.

Wood, due to its complex anatomy, requires meticulous characterization that imposes several tests to be carried out to evaluate its properties. Normative codes adopt different specimens to this aim. Geometric specificities proposed by NBR 7190-3:2022 and ASTM D143-22 to specimens used for estimating wood strength in tensile perpendicular to grain (ft90) make them difficult to carry out. Thus it is advisable to consider relating ft90 with another mechanical property, for example, the shear strength parallel to the grain (fv0). This paper aims to establish a coefficient relating the characteristic values of ft90 and fv0, for strength classes D40 and D60 (frequently used for structural purposes) of Brazilian Code 7190:3-2022. A further aim, if possible, is to determine a single representative coefficient for both classes. Tests made it possible to obtain those properties for four species from each class, following NBR 7190-3:2022 guidelines. The optimal coefficient was determined using the least squares method (MMQ). Ratios ft90,k/fv0,k were 0.22 and 0.19, for classes D40 and D60, respectively. As these ratios don’t present a significant difference, it is viable to adopt a single relationship for both classes, thus simplifying characterization procedures.

Synchronization of large spin Hall nano-oscillator (SHNO) arrays is an appealing approach toward ultrafast non-conventional computing. However, interfacing to the array, tuning its individual oscillators and providing built-in memory units remain substantial challenges. Here, we address these challenges using memristive gating of W/CoFeB/MgO/AlO x -based SHNOs. In its high resistance state, the memristor modulates the perpendicular magnetic anisotropy at the CoFeB/MgO interface by the applied electric field. In its low resistance state the memristor adds or subtracts current to the SHNO drive. Both electric field and current control affect the SHNO auto-oscillation mode and frequency, allowing us to reversibly turn on/off mutual synchronization in chains of four SHNOs. We also demonstrate that two individually controlled memristors can be used to tune a four-SHNO chain into differently synchronized states. Memristor gating is therefore an efficient approach to input, tune and store the state of SHNO arrays for non-conventional computing models. This allows versatile non-volatile tuning of the mutual synchronization of chains of up to four oscillators and provides a path toward individual oscillator control in large oscillatory arrays.

Oriented attachment of synthetic semiconductor nanocrystals is emerging as a route for obtaining new semiconductors that can have Dirac-type electronic bands such as graphene, but also strong spin-orbit coupling. The two-dimensional (2D) assembly geometry will require both atomic coherence and long-range periodicity of the superlattices. We show how the interfacial self-assembly and oriented attachment of nanocrystals results in 2D metal chalcogenide semiconductors with a honeycomb superlattice. We present an extensive atomic and nanoscale characterization of these systems using direct imaging and wave scattering methods. The honeycomb superlattices are atomically coherent and have an octahedral symmetry that is buckled; the nanocrystals occupy two parallel planes. Considerable necking and large-scale atomic motion occurred during the attachment process.

Some hardwoods have a higher density and superior structural performance than softwoods, which are generally used as construction materials in buildings. Therefore, the characteristics of hardwoods are advantageous in their use for wooden joints. However, the effects of the dimensions of hardwood specimens and wood species on the partial compression performance perpendicular to the grain are unclear. In this study, we conducted partial compression tests perpendicular to the grain of hardwoods to clarify the effects of the edge distance and wood species on the characteristic values. The relationships between the partial compression performance perpendicular to the grain and the edge distance perpendicular to the grain of hardwoods were similar to those of softwoods. A significant correlation was observed between the density and the characteristic values of partial compression perpendicular to the grain. There were differences in the fracture morphologies and stress–strain curves between diffuse and ring-porous woods. However, factors other than density and whether the wood is diffuse- or ring-porous are responsible for the differences in the effect of the edge distance on the characteristic values between wood species.

We show that the nonlinear mechanical response of networks formed from un-cross-linked fibrin or collagen type I continually changes in response to repeated large-strain loading. We demonstrate that this dynamic evolution of the mechanical response arises from a shift of a characteristic nonlinear stress-strain relationship to higher strains. Therefore, the imposed loading does not weaken the underlying matrices but instead delays the occurrence of the strain stiffening. Using confocal microscopy, we present direct evidence that this behavior results from persistent lengthening of individual fibers caused by an interplay between fiber stretching and fiber buckling when the networks are repeatedly strained. Moreover, we show that covalent cross-linking of fibrin or collagen inhibits the shift of the nonlinear material response, suggesting that the molecular origin of individual fiber lengthening may be slip of monomers within the fibers. Thus, a fibrous architecture in combination with constituents that exhibit internal plasticity creates a material whose mechanical response adapts to external loading conditions. This design principle may be useful to engineer novel materials with this capability.

It is known that an isolated single‐molecule magnet tends to become super‐paramagnetic even at an ultralow temperature of a few Kelvin due to the low spin switching barrier. Herein, single‐molecule ferroelectrics/multiferroics is proposed, as the ultimate size limit of memory, such that every molecule can store 1 bit data. The primary strategy is to identify polar molecules that possess bistable states, moderate switching barriers, and polarizations fixed along the vertical direction for high‐density perpendicular recording. First‐principles computation shows that several selected magnetic metal porphyrin molecules possess buckled structures with switchable vertical polarizations that are robust at ambient conditions. When intercalated within a bilayer of 2D materials such as bilayer MoS2 or CrI3, the magnetization can alter the spin distribution or can be even switched by 180° upon ferroelectric switching, rendering efficient electric writing and magnetic reading. It is found that the upper limit of areal storage density can be enhanced by four orders of magnitude, from the previous super‐paramagnetic limit of ≈40 to ≈106 GB in.−2, on the basis of the design of cross‐point multiferroic tunneling junction array and multiferroic hard drive. Single‐molecule (0D) ferroelectrics/multiferroics is proposed so every molecule can store 1 bit data at ambient conditions and a storage density up to ≈106 GB in.−2 can be obtained. When intercalated in bilayer of 2D materials, the magnetization can be reversed upon ferroelectric switching, rendering efficient electric writing + magnetic reading.