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The Zwicky Transient Facility (ZTF) is a new optical time-domain survey that uses the Palomar 48 inch Schmidt telescope. A custom-built wide-field camera provides a 47 deg2 field of view and 8 s readout time, yielding more than an order of magnitude improvement in survey speed relative to its predecessor survey, the Palomar Transient Factory. We describe the design and implementation of the camera and observing system. The ZTF data system at the Infrared Processing and Analysis Center provides near-real-time reduction to identify moving and varying objects. We outline the analysis pipelines, data products, and associated archive. Finally, we present on-sky performance analysis and first scientific results from commissioning and the early survey. ZTF's public alert stream will serve as a useful precursor for that of the Large Synoptic Survey Telescope.

The Xinglong 2.16-m reflector is the first 2-m class astronomical telescope in China. It was jointly designed and built by the Nanjing Astronomical Instruments Factory (NAIF), Beijing Astronomical Observatory (now National Astronomical Observatories, Chinese Academy of Sciences, NAOC), and Institute of Automation, Chinese Academy of Sciences in 1989. It is a Ritchey-Chrétien (R-C) reflector on an English equatorial mount and the effective aperture is 2.16 m. It had been the largest optical telescope in China for ∼18 years until the Guoshoujing Telescope (also called Large Sky Area Multi-Object Fiber Spectroscopic Telescope, LAMOST) and the Lijiang 2.4-m telescope were built. At present, there are three main instruments on the Cassegrain focus available: the Beijing Faint Object Spectrograph and Camera (BFOSC) for direct imaging and low-resolution (R ∼ 500-2000) spectroscopy, the spectrograph made by Optomechanics Research Inc. (OMR) for low-resolution spectroscopy (the spectral resolutions are similar to those of BFOSC) and the fiber-fed High Resolution Spectrograph (HRS; R ∼ 30,000-65,000). The telescope is widely open to astronomers all over China as well as international astronomical observers. Each year there are more than 40 ongoing observing projects, including 6-8 key projects. Recently, some new techniques and instruments (e.g., astro-frequency comb calibration system, polarimeter, and adaptive optics) have been or will be tested on the telescope to extend its observing abilities.

Current time domain facilities are finding several hundreds of transient astronomical events a year. The discovery rate is expected to increase in the future as soon as new surveys such as the Zwicky Transient Facility (ZTF) and the Large Synoptic Sky Survey (LSST) come online. Presently, the rate at which transients are classified is approximately one order or magnitude lower than the discovery rate, leading to an increasing \"follow-up drought\". Existing telescopes with moderate aperture can help address this deficit when equipped with spectrographs optimized for spectral classification. Here, we provide an overview of the design, operations and first results of the Spectral Energy Distribution Machine (SEDM), operating on the Palomar 60-inch telescope (P60). The instrument is optimized for classification and high observing efficiency. It combines a low-resolution (R ∼ 100) integral field unit (IFU) spectrograph with \"Rainbow Camera\" (RC), a multi-band field acquisition camera which also serves as multi-band (ugri) photometer. The SEDM was commissioned during the operation of the intermediate Palomar Transient Factory (iPTF) and has already lived up to its promise. The success of the SEDM demonstrates the value of spectrographs optimized for spectral classification.

The performance of photodetectors fabricated from emerging semiconductors such as perovskites, quantum dots, two-dimensional materials or organics, for example, can be prone to misinterpretation. This Comment exposes the problems and proposes some guidelines for accurate characterization.

Photodetectors based on two-dimensional (2D) materials have been the focus of intensive research and development over the past decade. However, a gap has long persisted between fundamental research and mature applications. One of the main reasons behind this gap has been the lack of a practical and unified approach for the characterization of their figures of merit, which should be compatible with the traditional performance evaluation system of photodetectors. This is essential to determine the degree of compatibility of laboratory prototypes with industrial technologies. Here we propose general guidelines for the characterization of the figures of merit of 2D photodetectors and analyze common situations when the specific detectivity, responsivity, dark current, and speed can be misestimated. Our guidelines should help improve the standardization and industrial compatibility of 2D photodetectors. The lack of a standardized approach for the characterization of the performance of 2D photodetectors represents an important obstacle towards their industrialization. Here, the authors propose practical guidelines to characterize their figures of merit and analyse common situations where their performance can be misestimated.

Next-generation polarized mid-infrared imaging systems generally requires miniaturization, integration, flexibility, good workability at room temperature and in severe environments, etc. Emerging two-dimensional materials provide another route to meet these demands, due to the ease of integrating on complex structures, their native in-plane anisotropy crystal structure for high polarization photosensitivity, and strong quantum confinement for excellent photodetecting performances at room temperature. However, polarized infrared imaging under scattering based on 2D materials has yet to be realized. Here we report the systematic investigation of polarized infrared imaging for a designed target obscured by scattering media using an anisotropic tellurium photodetector. Broadband sensitive photoresponse is realized at room temperature, with excellent stability without degradation under ambient atmospheric conditions. Significantly, a large anisotropic ratio of tellurium ensures polarized imaging in a scattering environment, with the degree of linear polarization over 0.8, opening up possibilities for developing next-generation polarized mid-infrared imaging technology. Photodetectors operating within scattering environment can be realized with anisotropic materials. Here, the authors report polarization sensitive photodetectors based on thin tellurium nanosheets with high photoresponsivity of 3.54 × 10 2  A/W, detectivity of ~3.01 × 10 9  Jones in the mid-infrared range and an anisotropic ratio of ∼8 for 2.3 μm illumination to ensure polarized imaging.

On a scalable silicon technology platform, we demonstrate photodetectors matching or even surpassing state-of-the-art III–V devices. As key components in high-speed optoelectronics, photodetectors with bandwidths greater than 100 GHz have been a topic of intense research for several decades. Solely InP-based detectors could satisfy the highest performance specifications. Devices based on other materials, such as germanium-on-silicon devices, used to lag behind in speed, but enabled complex photonic integrated circuits and co-integration with silicon electronics. Here we demonstrate waveguide-coupled germanium photodiodes with optoelectrical 3-dB bandwidths of 265 GHz and 240 GHz at a photocurrent of 1 mA. This outstanding performance is achieved by a novel device concept in which a germanium fin is sandwiched between complementary in situ-doped silicon layers. Our photodetectors show internal responsivities of 0.3 A W−1 (265 GHz) and 0.45 A W−1 (240 GHz) at a wavelength of 1,550 nm. The internal bandwidth–efficiency product of the latter device is 86 GHz. Low dark currents of 100–200 nA are obtained from these ultra-fast photodetectors.By sandwiching a germanium fin between complementary in situ-doped silicon layers, a waveguide-coupled germanium photodiode with a 3-dB bandwidth of 265 GHz, accompanied by high responsivity and low dark current, is realized.

The article discusses the additive-multiplicative fixed-pattern noise model of the infrared photodetector and a new way of its compensation, invariant to a change in exposure time. Examples of images showing the effectiveness of a new method for compensating fixed-pattern noise when the exposure time of a photodetector is changed are given.

With the further miniaturization and integration of multi-dimensional optical information detection devices, polarization-sensitive photodetectors based on anisotropic low-dimension materials have attractive potential applications. However, the performance of these devices is restricted by intrinsic property of materials leading to a small polarization ratio of the detectors. Here, we construct a black phosphorus (BP) homojunction photodetector defined by ferroelectric domains with ultra-sensitive polarization photoresponse. With the modulation of ferroelectric field, the BP exhibits anisotropic dispersion changes, leading an increased photothermalelectric (PTE) current in the armchair (AC) direction. Moreover, the PN junction can promote the PTE current and accelerate carrier separation. As a result, the BP photodetector demonstrates an ultrahigh polarization ratio (PR) of 288 at 1450 nm incident light, a large photoresponsivity of 1.06 A/W, and a high detectivity of 1.27 × 10 11 cmHz 1/2 W −1 at room temperature. This work reveals the great potential of BP in future polarized light detection. Integrated polarization-sensitive photodetectors are important for sensing applications and optical communication. Here, the authors report the realization of 2D black phosphorus homojunction photodetectors defined by ferroelectric substrates, showing polarization ratios up to 288 and high responsivity in the near-infrared.

Ga 2 O 3 -based solar blind avalanche photodetectors exhibit low voltage operation, optical filter-free and monolithic integration of photodetector arrays, and therefore they are promising to be an alternative to the bulky and fragile photomultiplier tubes for weak signal detection in deep-ultraviolet region. Here, by deliberate lattice and band engineering, we construct an n-Barrier-n unipolar barrier avalanche photodetector consisting of β -Ga 2 O 3 /MgO/Nb:SrTiO 3 heterostructure, in which the enlarged conduction band offsets fortify the reverse breakdown and suppress the dark current while the negligible valance band offsets faciliate minority carrier flow across the heterojunction. The developed devices exhibit record-high avalanche gain up to 5.9 × 10 5 and detectivity of 2.33 × 10 16 Jones among the reported wafer-scale grown Ga 2 O 3 -based photodetectors, which are even comparable to the commercial photomultiplier tubes. These findings provide insights into precise manipulation of band alignment in avalanche photodetectors, and also offer exciting opportunities for further developing high-performance Ga 2 O 3 -based electronics and optoelectronics. The limited breakdown electric field and the high dark current hider the application of solar blind avalanche photodiodes. Here, Zhang et al., by lattice and band engineering, construct a unipolar barrier avalanche photodiode with suppressed dark current and reinforced reverse breakdown.