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Silicon carbide (SiC)-diodes have been commercially available since 2001 and various SiC-switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power electronics and the first low-voltage devices are already on the market. Currently, it seems that GaN-transistors are ideal for high frequency ICs up to 1kV (maybe 2kV) and maximum a few 10A. SiC transistors are better suited for discrete devices or modules blocking 1kV and above and virtually no limit in the current but in that range they will face strong competition from the silicon insulated gate bipolar transistors (IGBTs). SiC and GaN Schottky-diodes would offer a similar performance, hence here it becomes apparent that material cost and quality will finally decide the commercial success of wide bandgap devices. Bulk GaN is still prohibitively expensive, whereas GaN on silicon would offer an unrivalled cost advantage. Devices made from the latter could be even cheaper than silicon devices. However, packaging is already a limiting factor for silicon devices even more so in exploiting the advantage of wide bandgap materials with respect to switching speed and high temperature operation. After all, reliability is a must for any device no matter which material it is made of.

As one of the most vulnerable components to temperature and temperature cycling conditions in power electronics converter systems in these application fields as wind power, electric vehicles, drive system, etc., power semiconductor devices draw great concern in terms of reliability. Owing to the wide utilization of power semiconductor devices in various power applications, especially insulated gate bipolar transistors (IGBTs), power semiconductor devices have been studied extensively regarding increasing reliability methods. This study comparatively reviews recent advances in the area of reliability research for power semiconductor devices, including condition monitoring (CM), active thermal control (ATC), and remaining useful lifetime (RUL) estimation techniques. Different from previous review studies, this technical review is carried out with the aim of providing a comprehensive overview of the correlation between various enhancing reliability techniques and discussing the corresponding merits and demerits by using 144 related up-to-date papers. The structure and failure mechanism of power semiconductor devices are first investigated. Different failure indicators and recent associated CM techniques are then compared. The ATC approaches following the type of converter systems are further summarized. Furthermore, RUL estimation techniques are surveyed. This paper concludes with summarized challenges for future research opportunities regarding reliability improvement.

This study addresses the problem of detection and isolation of open-switch faults in voltage source inverters by processing the stator current measurements. First, the resulting post-fault trajectories for the stator currents are analytically derived for single and concurrent faults (21 classes) by using Fourier series. This analysis motivated the proposed approach, which is based on the resulting pattern of the stator currents in the dq-frame after a fault, where a histogram of the trajectory is calculated by dividing the plane in 24 equally spaced sectors. From the calculated histogram, a distinctive signature is associated to each fault trajectory in the dq-plane. Single and double faults in the power semi-conductors are analysed that all provide linearly independent signatures for fault isolation. The proposed isolation methodology is independent of the load torque (system disturbance), supply frequency and only requires the information of the stator currents. Furthermore, since the isolation stage is focused on the angle of the current trajectories in the dq-plane, open- and closed-loop configurations of a variable speed drive can be simultaneously handled. Experimental results with a test bench of 3/4 HP induction motor under single and concurrent faults validated the proposed methodology.

Paralleling of power semiconductor devices is inevitable considering their widespread application and exploitation in the extended horizon of these applications. However, paralleling of power semiconductor devices is prone to severe unbalancing corresponding to the non-idealities of device parameters, which leads to non-identical dynamic and static characteristics of the power devices, as well as the operating conditions and aging. Therefore, the currents are generally non-uniform and cause the derating of the system. This paper discusses and analyzes issues associated with the paralleling of IGBT power devices, which can evoke serious reliability issues. Furthermore, the paper examines the techniques and methodologies that have been proposed to reduce the issue of current unbalancing of parallel-connected power devices.

Silicon-based high-power devices continue to play an enabling role in modern high-power systems, especially in the fields of traction, industrial and grid applications. Today, approximately 30 years after its invention, a bipolar-metal-oxide semi-conductor controlled switch referred to as the insulated gate bipolar transistor (IGBT) is the device of choice for the majority of power electronics converters with power ratings ranging from few kWs to beyond the 1 GW mark. Following a brief introduction into power devices and applications in general, this paper will provide an overview of the development history and recent advancements of the IGBT. More importantly the future technology trends purely from the device design view point will be discussed including the predicted performance impact such technology platforms will have at the system level especially in the high-power range.

Fiber lasers are commonly used in many industrial applications, such as cutting, welding, marking, and additive manufacturing. In a fiber laser system, the driver of a pumping source using a laser diode (LD) module and its dynamic control capability directly affect the performance of the fiber laser system. The commercial design of pumping source drivers for high-power fiber lasers is mainly based on a linear-type DC power supply, which has two major drawbacks, i.e., lower efficiency and bulk. In this regard, this paper proposes for the first time a new design approach with a programmable switching mode laser diode driver using a power semiconductor device (PSD)-based full-bridge phase-shifted (FB-PS) DC-DC converter for driving a 200 W optical power laser diode module. In this paper, the characteristics of a laser diode module and the system configuration of the proposed laser diode driver are first introduced. Then, a current control scheme using the concept of phase angle shifting to achieve a fast dynamic current tracking feature is explained. The proposed current control technique with a fully digital control scheme is then addressed. Next, dynamic mathematical models of the laser diode driver system and controllers are derived, and the quantitative design detail of the controller is presented. To confirm the correctness of the proposed control scheme, a simulation study on a typical control case is performed in PSIM 9.1 software environment. To verify the effectiveness of the proposed LD driver, a digital signal processor is then used as the control core to construct a hardware prototype implementation for performing experimental tests. Results obtained from simulation and hardware tests show highly satisfactory driving performances in the laser diode’s output current command tracking control.

In recent years, the penetration of wind power generation has been growing steadily to adapt to the modern trend of boosting renewable energy (RE)-based power generation. However, the dynamic power flow of wind turbine generators (WTGs) is unpredictable and can have a negative impact on existing power grids. To solve this problem efficiently, this paper presents a multifunctional WTG intelligent compensator (WTGIC) for the advanced power management and compensation of power systems embedded with WTGs. The proposed WTGIC consists of a power semiconductor device (PSD)-based bidirectional three-phase inverter module and an energy storage unit (ESU). In order to reduce system costs and improve reliability, efficiency, and flexibility, various control functions and algorithms are integrated via a modularized all-digital control scheme. In this paper, the configuration of the proposed WTGIC is first introduced, and then the operating modes and related compensation and control functions are addressed. An online efficiency optimization algorithm is proposed, and the required controllers are designed and implemented. The designed functions of the proposed WTGIC include high-efficiency charging/discharging of the ESU, real-time power quality (PQ) compensation, and high-efficiency power smoothing of the WTGs. The feasibility and effectiveness of the proposed WTGIC are verified using case studies with simulations in the Powersim (PSIM) environment and the implementation of a small-scale hardware experimental system with TI’s digital signal processor (DSP) TI28335 as the main controller.

Powering the increasing number of sensor nodes used in the Internet of Things creates a technological challenge. The economic and sustainability issues of battery-powered devices mean that wirelessly powered operation—combined with environmentally friendly circuit technologies—will be needed. Large-area electronics—which can be based on organic semiconductors, amorphous metal oxide semiconductors, semiconducting carbon nanotubes and two-dimensional semiconductors—could provide a solution. Here we examine the potential of large-area electronics technology in the development of sustainable, wirelessly powered Internet of Things sensor nodes. We provide a system-level analysis of wirelessly powered sensor nodes, identifying the constraints faced by such devices and highlighting promising architectures and design approaches. We then explore the use of large-area electronics technology in wirelessly powered Internet of Things sensor nodes, with a focus on low-power transistor circuits for digital processing and signal amplification, as well as high-speed diodes and printed antennas for data communication and radiofrequency energy harvesting. This Perspective explores the potential of large-area electronics in wirelessly powered sensor nodes for the Internet of Things, considering low-power circuits for digital processing and signal amplification, as well as diodes and printed antennas for data communication and radiofrequency energy harvesting.

Avalanche and surge robustness involve fundamental carrier dynamics under high electric field and current density. They are also prerequisites of any power device to survive common overvoltage and overcurrent stresses in power electronics applications such as electric vehicles, electricity grids, and renewable energy processing. Despite tremendous efforts to develop the next-generation power devices using emerging ultra-wide bandgap semiconductors, the lack of effective bipolar doping has been a daunting obstacle for achieving the necessary robustness in these devices. Here we report avalanche and surge robustness in a heterojunction formed between the ultra-wide bandgap n-type gallium oxide and the wide-bandgap p-type nickel oxide. Under 1500 V reverse bias, impact ionization initiates in gallium oxide, and the staggered band alignment favors efficient hole removal, enabling a high avalanche current over 50 A. Under forward bias, bipolar conductivity modulation enables the junction to survive over 50 A surge current. Moreover, the asymmetric carrier lifetime makes the high-level carrier injection dominant in nickel oxide, enabling a fast reverse recovery within 15 ns. This heterojunction breaks the fundamental trade-off between robustness and switching speed in conventional homojunctions and removes a key hurdle to advance ultra-wide bandgap semiconductor devices for power industrial applications. Avalanche and surge robustness are fundamental for power devices to survive overvoltage and overcurrent stresses in typical applications. Here, authors report NiO/Ga 2 O 3 heterojunctions with smaller reverse recovery, higher switching speed, and a robustness competitive to that of conventional homojunctions.

A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material characteristics, including its high critical electric field, high saturation velocity, high electron mobility, and outstanding thermal stability. Therefore, the superior performance is represented by GaN-based high electron mobility transistor (HEMT) devices. They can perform at higher currents, voltages, temperatures, and frequencies, making them suitable devices for the next generation of high-efficiency power converter applications, including electric vehicles, phone chargers, renewable energy, and data centers. Thus, this review article will provide a basic overview of the various technological and scientific elements of the current GaN HEMTs technology. First, the present advancements in the GaN market and its primary application areas are briefly summarized. After that, the GaN is compared with other devices, and the GaN HEMT device’s operational material properties with different heterostructures are discussed. Then, the normally-off GaN HEMT technology with their different types are considered, especially on the recessed gate metal insulator semiconductor high electron mobility transistor (MISHEMT) and p-GaN. Hereafter, this review also discusses the reliability concerns of the GaN HEMT which are caused by trap effects like a drain, gate lag, and current collapse with numerous types of degradation. Eventually, the breakdown voltage of the GaN HEMT with some challenges has been studied.