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3,641
result(s) for
"Resistors"
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Signatures of fluid–fluid displacement in porous media: wettability, patterns and pressures
by
Fu, Xiaojing
,
Pahlavan, Amir A.
,
Juanes, Ruben
in
Capacitors
,
Capillary flow
,
Capillary pressure
2019
We develop a novel ‘moving-capacitor’ dynamic network model to simulate immiscible fluid–fluid displacement in porous media. Traditional network models approximate the pore geometry as a network of fixed resistors, directly analogous to an electrical circuit. Our model additionally captures the motion of individual fluid–fluid interfaces through the pore geometry by completing this analogy, representing interfaces as a set of moving capacitors. By incorporating pore-scale invasion events, the model reproduces, for the first time, both the displacement pattern and the injection-pressure signal under a wide range of capillary numbers and substrate wettabilities. We show that at high capillary numbers the invading patterns advance symmetrically through viscous fingers. In contrast, at low capillary numbers the flow is governed by the wettability-dependent fluid–fluid interactions with the pore structure. The signature of the transition between the two regimes manifests itself in the fluctuations of the injection-pressure signal.
Journal Article
Research on the conductivity and application of carbon film resistor
2025
Carbon film resistors have the characteristics of high precision, wide resistance range, high voltage rating, good stability, negative temperature coefficient of resistance, good high-frequency characteristics, and good pulse load capability, and have a wide range of applications. In this research, experimental research was conducted on the electrical conductivity and influencing factors of carbon film resistors, providing a scientific basis for optimizing the preparation process of carbon film and improving its conductivity performance. In addition, the resistance value of carbon film resistors is greatly affected by temperature. Leveraging the negative temperature coefficient of resistance characteristic of carbon film resistors, they are widely used in temperature measurement.
Journal Article
A calibratable sensory neuron based on epitaxial VO2 for spike-based neuromorphic multisensory system
Neuromorphic perception systems inspired by biology have tremendous potential in efficiently processing multi-sensory signals from the physical world, but a highly efficient hardware element capable of sensing and encoding multiple physical signals is still lacking. Here, we report a spike-based neuromorphic perception system consisting of calibratable artificial sensory neurons based on epitaxial VO
2
, where the high crystalline quality of VO
2
leads to significantly improved cycle-to-cycle uniformity. A calibration resistor is introduced to optimize device-to-device consistency, and to adapt the VO
2
neuron to different sensors with varied resistance level, a scaling resistor is further incorporated, demonstrating cross-sensory neuromorphic perception component that can encode illuminance, temperature, pressure and curvature signals into spikes. These components are utilized to monitor the curvatures of fingers, thereby achieving hand gesture classification. This study addresses the fundamental cycle-to-cycle and device-to-device variation issues of sensory neurons, therefore promoting the construction of neuromorphic perception systems for e-skin and neurorobotics.
A highly efficient hardware element capable of sensing and encoding multiple physical signals is still lacking. Here, the authors report a spike-based neuromorphic perception system consisting of tunable and highly uniform artificial sensory neurons based on epitaxial VO
2
capable of hand gesture classification.
Journal Article
Implementation of instantaneous comparison methods in temperature gradient evaluation of stirred liquid temperature baths
2023
Temperature gradient is an important performance indicator of a stirred liquid bath. Its evaluation requires measuring the temperature differences between different bath positions. A common way to do that is to place two SPRTs at two positions and measure their resistances against a standard resistor ( R SPRT1 / R S and R SPRT2 / R S ) sequentially (the sequential method). A drawback of this method is the existence of a time gap between the two measurements rendering the results susceptible to temporal temperature variation. The instantaneous comparisons method offers a better solution by measuring the resistance ratio of two SPRTs directly ( R SPRT1 / R SPRT2 ) and deriving their temperature difference at the same moment eliminating the time gap. To implement this method at the Standards and Calibration Laboratory (SCL) of Hong Kong, the resistance ratio of SPRT1 to a standard resistor ( R SPRT1 / R s ) is firstly measured to determine the initial bath temperature. After that, the resistance ratios of SPRT1 to SPRT2 ( R SPRT1 / R SPRT2 ) are measured with the two SPRTs placed at different positions and immersion depths in the bath. This paper describes the derivation of the temperature difference from the SPRT resistance ratio using the ITS-90 reference equations and the estimation of the measurement uncertainties. The potential of reducing the uncertainties of measured temperature gradient by leveraging the correlation of the two SPRTs calibrated at the same set of temperature fixed points is discussed. The paper also compares the calibration results obtained by the instantaneous comparisons method and the sequential method.
Journal Article
Who is wearing a mask? Gender-, age-, and location-related differences during the COVID-19 pandemic
2020
Masks are an effective tool in combatting the spread of COVID-19, but some people still resist wearing them and mask-wearing behavior has not been experimentally studied in the United States. To understand the demographics of mask wearers and resistors, and the impact of mandates on mask-wearing behavior, we observed shoppers (n = 9935) entering retail stores during periods of June, July, and August 2020. Approximately 41% of the June sample wore a mask. At that time, the odds of an individual wearing a mask increased significantly with age and was also 1.5x greater for females than males. Additionally, the odds of observing a mask on an urban or suburban shopper were ~4x that for rural areas. Mask mandates enacted in late July and August increased mask-wearing compliance to over 90% in all groups, but a small percentage of resistors remained. Thus, gender, age, and location factor into whether shoppers in the United States wear a mask or face covering voluntarily. Additionally, mask mandates are necessary to increase mask wearing among the public to a level required to mitigate the spread of COVID-19.
Journal Article
Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
2017
The accumulation and extrusion of Ca
2+
in the pre- and postsynaptic compartments play a critical role in initiating plastic changes in biological synapses. To emulate this fundamental process in electronic devices, we developed diffusive Ag-in-oxide memristors with a temporal response during and after stimulation similar to that of the synaptic Ca
2+
dynamics.
In situ
high-resolution transmission electron microscopy and nanoparticle dynamics simulations both demonstrate that Ag atoms disperse under electrical bias and regroup spontaneously under zero bias because of interfacial energy minimization, closely resembling synaptic influx and extrusion of Ca
2+
, respectively. The diffusive memristor and its dynamics enable a direct emulation of both short- and long-term plasticity of biological synapses, representing an advance in hardware implementation of neuromorphic functionalities.
Calcium ions play a vital role in enabling synaptic plasticity in biological systems. The dynamic behaviour of these ions has now been emulated in a metal atom diffusion-based memristor.
Journal Article
Interplay of somatic alterations and immune infiltration modulates response to PD-1 blockade in advanced clear cell renal cell carcinoma
by
Neuberg, Donna
,
Ross-Macdonald, Petra
,
Sharpe, Arlene H.
in
631/67/580
,
692/699/67/1059/2325
,
692/699/67/1059/2326
2020
PD-1 blockade has transformed the management of advanced clear cell renal cell carcinoma (ccRCC), but the drivers and resistors of the PD-1 response remain incompletely elucidated. Here, we analyzed 592 tumors from patients with advanced ccRCC enrolled in prospective clinical trials of treatment with PD-1 blockade by whole-exome and RNA sequencing, integrated with immunofluorescence analysis, to uncover the immunogenomic determinants of the therapeutic response. Although conventional genomic markers (such as tumor mutation burden and neoantigen load) and the degree of CD8
+
T cell infiltration were not associated with clinical response, we discovered numerous chromosomal alterations associated with response or resistance to PD-1 blockade. These advanced ccRCC tumors were highly CD8
+
T cell infiltrated, with only 27% having a non-infiltrated phenotype. Our analysis revealed that infiltrated tumors are depleted of favorable
PBRM1
mutations and enriched for unfavorable chromosomal losses of 9p21.3, as compared with non-infiltrated tumors, demonstrating how the potential interplay of immunophenotypes with somatic alterations impacts therapeutic efficacy.
A pooled genetic, transcriptomic and immunopathologic analysis of over 500 tumors from patients with advanced renal cell cancer suggests that response to PD-1 blockade depends on both CD8
+
T cell infiltration and enrichment of tumor-intrinsic somatic alterations.
Journal Article
A ferroelectric memristor
by
Grollier, Julie
,
Yamada, Hiroyuki
,
Bibes, Manuel
in
Condensed Matter
,
Electronics
,
Exact solutions
2012
Memristors are continuously tunable resistors that emulate biological synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, although the details of the mechanism remain under debate. Purely electronic memristors based on well-established physical phenomena with albeit modest resistance changes have also emerged. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth, we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.
Journal Article
Study of line defects in infinite networks of resistors
by
Cserti, József
,
Németh, Róbert
,
Széchenyi, Gábor
in
Applied mathematics
,
Boundary conditions
,
Defects
2025
We study infinite resistor networks perturbed by line defects, in which the resistances are periodically modified along a single line. Using the Sherman–Morrison identity applied to the lattice Laplace operator, we develop a general analytical framework for computing the Green’s function and the equivalent resistance between arbitrary nodes. The resulting expression is a one-dimensional integral that is evaluated exactly in special cases. While our analysis is carried out for the square lattice, the method readily extends to other lattice geometries and networks with general impedances. Therefore, this framework is useful for studying the boundary behavior of topolectrical circuits, which serve as classical analogs of topological insulators.
Journal Article
Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper
2020
Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS 2 field-effect transistors on paper fabricated with a “channel array” approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing. The first allows the pre-deposition of a pattern of MoS 2 ; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average I ON /I OFF of 8 × 10 3 (up to 5 × 10 4 ) and mobility of 5.5 cm 2 V −1 s −1 (up to 26 cm 2 V −1 s −1 ) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.
Journal Article