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Until about two hundred years ago, no gemological distinction was made between ruby and spinel. Red spinel and red ruby are not infrequently found together and though gem cutters and engravers noticed and commented on the difference in hardness, the assumption was that spinel was simply an \"unripe\" version of ruby. Additionally, ruby and sapphire are both versions of the mineral corundum, distinguished only by color and minute traces of the metal oxides that caused these different colors. Sapphires may be pink, yellow, and green as well as blue, while rubies come in many shades of red which, inevitably causes confusion as one person's pale red ruby is another's pink sapphire--there are no absolutes. Consequently, the nomenclature is confused, both within early texts, and also in later translations of those texts. The ancient authors could only report on the basis of the information available to them at the time, while those writing the later translations were fine textual scholars or epigraphers, but not infrequently poor gemologists, not familiar with the mineralogical distinctions between the gems. It has often been difficult to get an overarching view of the many different factors that all played a part in the spread of precious gems and of the dissemination of knowledge about them. Given the paucity of available information concentrating exclusively on the use of ancient precious gemstones, the author combed the literature for relevant references. A surprising amount of descriptive and factual information was found, mostly scattered throughout early texts. The most interesting passages were selected and wherever possible the original authors' words were quoted rather than paraphrased. The early translations in the languages used by 17th-19th century scholars are given, names of people, places or objects that otherwise might have remained obscure are explained. Gems travel. They follow wealth and because of their natural immutability, the only way they can be identified by culture is by the way man has affected their appearance, deliberately or accidentally. The dating of gems that are still in original period settings is easier because the dated typology of rings and jewelry settings generally, is more secure than the study of gem shapes, while the study and dating of specific faceting styles of unmounted stones is still in its infancy.

Models for light dark matter particles with masses below 1 GeV/c 2 are a natural and well-motivated alternative to so-far unobserved weakly interacting massive particles. Gram-scale cryogenic calorimeters provide the required detector performance to detect these particles and extend the direct dark matter search program of CRESST. A prototype 0.5 g sapphire detector developed for the ν -cleus experiment has achieved an energy threshold of E t h = ( 19.7 ± 0.9 )  eV. This is one order of magnitude lower than for previous devices and independent of the type of particle interaction. The result presented here is obtained in a setup above ground without significant shielding against ambient and cosmogenic radiation. Although operated in a high-background environment, the detector probes a new range of light-mass dark matter particles previously not accessible by direct searches. We report the first limit on the spin-independent dark matter particle-nucleon cross section for masses between 140 and 500 MeV/c 2 .

Ultrathin two-dimensional (2D) semiconducting layered materials offer great potential for extending Moore’s law of the number of transistors in an integrated circuit 1 . One key challenge with 2D semiconductors is to avoid the formation of charge scattering and trap sites from adjacent dielectrics. An insulating van der Waals layer of hexagonal boron nitride (hBN) provides an excellent interface dielectric, efficiently reducing charge scattering 2 , 3 . Recent studies have shown the growth of single-crystal hBN films on molten gold surfaces 4 or bulk copper foils 5 . However, the use of molten gold is not favoured by industry, owing to its high cost, cross-contamination and potential issues of process control and scalability. Copper foils might be suitable for roll-to-roll processes, but are unlikely to be compatible with advanced microelectronic fabrication on wafers. Thus, a reliable way of growing single-crystal hBN films directly on wafers would contribute to the broad adoption of 2D layered materials in industry. Previous attempts to grow hBN monolayers on Cu (111) metals have failed to achieve mono-orientation, resulting in unwanted grain boundaries when the layers merge into films 6 , 7 . Growing single-crystal hBN on such high-symmetry surface planes as Cu (111) 5 , 8 is widely believed to be impossible, even in theory. Nonetheless, here we report the successful epitaxial growth of single-crystal hBN monolayers on a Cu (111) thin film across a two-inch c -plane sapphire wafer. This surprising result is corroborated by our first-principles calculations, suggesting that the epitaxial growth is enhanced by lateral docking of hBN to Cu (111) steps, ensuring the mono-orientation of hBN monolayers. The obtained single-crystal hBN, incorporated as an interface layer between molybdenum disulfide and hafnium dioxide in a bottom-gate configuration, enhanced the electrical performance of transistors. This reliable approach to producing wafer-scale single-crystal hBN paves the way to future 2D electronics. The epitaxial growth of single-crystal hexagonal boron nitride monolayers on a copper (111) thin film across a sapphire wafer suggests a route to the broad adoption of two-dimensional layered semiconductor materials in industry.

So far, nanostructuring of hard optical crystals has been exclusively limited to their surface, as stress-induced crack formation and propagation render high-precision volume processes ineffective1,2. Here, we show that the rate of nanopore chemical etching in the popular laser crystals yttrium aluminium garnet and sapphire can be enhanced by more than five orders of magnitude (from <0.6 nm h−1 to ~100 µm h−1) by the use of direct laser writing, before etching. The process makes it possible to produce arbitrary three-dimensional nanostructures with 100 nm feature sizes inside centimetre-scale laser crystals without brittle fracture. To showcase the potential of the technique we fabricate subwavelength diffraction gratings and nanostructured optical waveguides in yttrium aluminium garnet and millimetre-long nanopores in sapphire. The approach offers a pathway for transferring concepts from nanophotonics to the fields of solid-state lasers and crystal optics.

State-of-the-art laser frequency stabilization by high-finesse optical cavities is limited fundamentally by thermal noise-induced cavity length fluctuations. We present a novel design to reduce this thermal noise limit by an order of magnitude as well as an experimental realization of this new cavity system, demonstrating the most stable oscillator of any kind to date for averaging times of 0.1–10 s. The cavity spacer and the mirror substrates are both constructed from single-crystal silicon and are operated at 124 K, where the silicon thermal expansion coefficient is zero and the mechanical loss is small. The cavity is supported in a vibration-insensitive configuration, which, together with the superior stiffness of the silicon crystal, reduces the vibration-related noise. With rigorous analysis of heterodyne beat signals among three independent stable lasers, the silicon system demonstrates a fractional frequency instability of 1 × 10 −16 at short timescales and supports a laser linewidth of <40 mHz at 1.5 µm. Frequency stabilization in a high-finesse optical cavity is limited fundamentally by thermal-noise-induced cavity length fluctuations. Scientists have now developed a single-crystal silicon system that offers a fractional frequency instability of 1 × 10 −16 at short timescales and supports a laser linewidth of less than 40 mHz at 1.5 µm.

The paper considers the experimentally observed instability of capillary shaping during the growth of thick-walled sapphire tubes by the Stepanov method. The explanation of this phenomenon is based on the theoretical model of radiative-conductive heat transfer in a crystal. An algorithm is developed for the asymptotic expansion of the problem based on the presence of two small parameters. It is shown that the spatial density of the radiation is inhomogeneous along the cross section of the tube and is maximum near its inner walls. This leads to their overheating and the meniscus separation from the inner edges of the shaper.

Here we demonstrate high-brightness InGaN/GaN green light emitting diodes (LEDs) with in-situ low-temperature GaN (LT-GaN) nucleation layer (NL) and ex-situ sputtered AlN NL on 4-inch patterned sapphire substrate. Compared to green LEDs on LT-GaN (19 nm)/sapphire template, green LEDs on sputtered AlN (19 nm)/template has better crystal quality while larger in-plane compressive strain. As a result, the external quantum efficiency (EQE) of green LEDs on sputtered AlN (19 nm)/sapphire template is lower than that of green LEDs on LT-GaN (19 nm)/sapphire template due to strain-induced quantum-confined Stark effect (QCSE). We show that the in-plane compressive strain of green LEDs on sputtered AlN/sapphire templates can be manipulated by changing thickness of the sputtered AlN NL. As the thickness of sputtered AlN NL changes from 19 nm to 40 nm, the green LED on sputtered AlN (33 nm)/sapphire template exhibits the lowest in-plane compressive stress and the highest EQE. At 20 A/cm 2 , the EQE of 526 nm green LEDs on sputtered AlN (33 nm)/sapphire template is 36.4%, about 6.1% larger than that of the green LED on LT-GaN (19 nm)/sapphire template. Our experimental data suggest that high-efficiency green LEDs can be realized by growing InGaN/GaN multiple quantum wells (MQWs) on sputtered AlN/sapphire template with reduced in-plane compressive strain and improved crystal quality.

Graphene has exceptional electronic, optical, mechanical and thermal properties, which provide it with great potential for use in electronic, optoelectronic and sensing applications. The chemical functionalization of graphene has been investigated with a view to controlling its electronic properties and interactions with other materials. Covalent modification of graphene by organic diazonium salts has been used to achieve these goals, but because graphene comprises only a single atomic layer, it is strongly influenced by the underlying substrate. Here, we show a stark difference in the rate of electron-transfer reactions with organic diazonium salts for monolayer graphene supported on a variety of substrates. Reactions proceed rapidly for graphene supported on SiO 2 and Al 2 O 3 (sapphire), but negligibly on alkyl-terminated and hexagonal boron nitride (hBN) surfaces, as shown by Raman spectroscopy. We also develop a model of reactivity based on substrate-induced electron–hole puddles in graphene, and achieve spatial patterning of chemical reactions in graphene by patterning the substrate. The chemical modification of graphene is important for its use in many applications. Now it is shown that the reactivity of graphene towards covalent modification varies widely depending on its underlying support substrate, and that the substrate can be patterned to induce spatial control of chemical reactions in graphene.

We demonstrate wafer-scale growth of high-quality hexagonal boron nitride (h-BN) film on Ni(111) template using metal-organic chemical vapor deposition (MOCVD). Compared with inert sapphire substrate, the catalytic Ni(111) template facilitates a fast growth of high-quality h-BN film at the relatively low temperature of 1000 °C. Wafer-scale growth of a high-quality h-BN film with Raman E 2g peak full width at half maximum (FWHM) of 18~24 cm −1 is achieved, which is to the extent of our knowledge the best reported for MOCVD. Systematic investigation of the microstructural and chemical characteristics of the MOCVD-grown h-BN films reveals a substantial difference in catalytic capability between the Ni(111) and sapphire surfaces that enables the selective-area growth of h-BN at pre-defined locations over a whole 2-inch wafer. These achievement and findings have advanced our understanding of the growth mechanism of h-BN by MOCVD and will contribute an important step toward scalable and controllable production of high-quality h-BN films for practical integrated two-dimensional materials-based systems and devices.

In this work we report on the characterization and biological functionalization of 2D MoS 2 flakes, epitaxially grown on sapphire, to develop an optical biosensor for the breast cancer biomarker miRNA21. The MoS 2 flakes were modified with a thiolated DNA probe complementary to the target biomarker. Based on the photoluminescence of MoS 2 , the hybridization events were analyzed for the target (miRNA21c) and the control non-complementary sequence (miRNA21nc). A specific redshift was observed for the hybridization with miRNA21c, but not for the control, demonstrating the biomarker recognition via PL. The homogeneity of these MoS 2 platforms was verified with microscopic maps. The detailed spectroscopic analysis of the spectra reveals changes in the trion to excitation ratio, being the redshift after the hybridization ascribed to both peaks. The results demonstrate the benefits of optical biosensors based on MoS 2 monolayer for future commercial devices.