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50 years in the semiconductor underground
This book was derived from a talk the author gave at the International Conference on Advanced Nanodevices and Nanotechnology in Hawaii. The book presents the author's personal views about science, engineering, and life, illustrated by a number of stories about various events, some of which have shaped the author's life.
Book
Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends
Silicon (Si)-based semiconductor devices have long dominated the power electronics industry and are used in almost every application involving power conversion. Examples of these include metal-oxide-semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistors (IGBTs), gate turn-off (GTO), thyristors, and bipolar junction transistor (BJTs). However, for many applications, power device requirements such as higher blocking voltage capability, higher switching frequencies, lower switching losses, higher temperature withstand, higher power density in power converters, and enhanced efficiency and reliability have reached a stage where the present Si-based power devices cannot cope with the growing demand and would usually require large, costly cooling systems and output filters to meet the requirements of the application. Wide bandgap (WBG) power semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond (Dia) have recently emerged in the commercial market, with superior material properties that promise substantial performance improvements and are expected to gradually replace the traditional Si-based devices in various power electronics applications. WBG power devices can significantly improve the efficiency of power electronic converters by reducing losses and making power conversion devices smaller in size and weight. The aim of this paper is to highlight the technical and market potential of WBG semiconductors. A detailed short-term and long-term analysis is presented in terms of cost, energy impact, size, and efficiency improvement in various applications, including motor drives, automotive, data centers, aerospace, power systems, distributed energy systems, and consumer electronics. In addition, the paper highlights the benefits of WBG semiconductors in power conversion applications by considering the current and future market trends.
Journal Article
Correction: Trade facilitation, market size, and supply chain efficiency of Taiwan semiconductor companies
[This corrects the article DOI: 10.1371/journal.pone.0299322.].
Journal Article
Semiconductor manufacturing handbook
After a difficult period, the semiconductor manufacturing industry is growing again, with significant prospects in the world market. This concise reference brings the full range of semiconductor fabrication technologies and methods to the engineer's fingertips.
Book
Performance Assessment of the Semiconductor Industry: Measured by DEA Environmental Assessment
This study measures the unified (i.e., operational and environmental) performance of semiconductor firms in the world by using Data Envelopment Analysis (DEA) environmental assessment. With its promising and expanding electronic applications, many industrial nations have supported the semiconductor industry under their strategic plans, and numerous firms are involved in the global value chain. Drawing on the proposed DEA-based environmental (sustainability) assessment, which uses two disposability criteria (i.e., natural and managerial), this study first compute the unified efficiency scores of semiconductor firms. Then, this study explores how corporate age, business model, and location influence the efficiency scores by employing Tobit regressions and t-tests. The empirical implications obtained from this research indicate that overall, the semiconductor firms look for their economic achievements but are not paying enough attention to environmental sustainability. Corporate age and business model are statistically related with their operational performance measures whereas corporate location is related with their environmental ones.
Journal Article
Moore's law : the life of Gordon Moore, Silicon Valley's quiet revolutionary
\"A chemist and founder of Intel, Gordon Moore played a major role in revolutionizing technology and shaping the growth and reach of Silicon Valley. The story of the man--an inventor and businessman whose influence on the world is at least as great as Thomas Edison's, Henry Ford's, or Bill Gates's--has never before been told ... [In this book], Arnold Thackray sheds light on Gordon Moore, gives context to the technologies and world of high-tech power he helped to develop, and provides [an] ... introduction to the history and science of the silicon transistor, the technological building block that has transformed commercial business, defense strategies, and the everyday lives of individuals around the globe\"-- Provided by publisher.
Book
Application of 1D ResNet for Multivariate Fault Detection on Semiconductor Manufacturing Equipment
Amid the ongoing emphasis on reducing manufacturing costs and enhancing productivity, one of the crucial objectives when manufacturing is to maintain process tools in optimal operating conditions. With advancements in sensing technologies, large amounts of data are collected during manufacturing processes, and the challenge today is to utilize these massive data efficiently. Some of these data are used for fault detection and classification (FDC) to evaluate the general condition of production machinery. The distinctive characteristics of semiconductor manufacturing, such as interdependent parameters, fluctuating behaviors over time, and frequently changing operating conditions, pose a major challenge in identifying defective wafers during the manufacturing process. To address this challenge, a multivariate fault detection method based on a 1D ResNet algorithm is introduced in this study. The aim is to identify anomalous wafers by analyzing the raw time-series data collected from multiple sensors throughout the semiconductor manufacturing process. To achieve this objective, a set of features is chosen from specified tools in the process chain to characterize the status of the wafers. Tests on the available data confirm that the gradient vanishing problem faced by very deep networks starts to occur with the plain 1D Convolutional Neural Network (CNN)-based method when the size of the network is deeper than 11 layers. To address this, a 1D Residual Network (ResNet)-based method is used. The experimental results show that the proposed method works more effectively and accurately compared to techniques using a plain 1D CNN and can thus be used for detecting abnormal wafers in the semiconductor manufacturing industry.
Journal Article
Highly Responsive and Self-Powered Photodetector Based on PtSesub.2/MoSsub.2 Heterostructure
In recent years, 2D materials and their heterostructures have started to offer an ideal platform for high-performance photodetection devices. In this work, a highly responsive, self-powered photodetector based on PtSe[sub.2]/MoS[sub.2] van der Waals heterostructure is demonstrated. The device achieves a noteworthy wide band spectral response from visible (405 nm) range to the near infrared region (980 nm). The remarkable photoresponsivity and external quantum efficiency up to 4.52 A/W, and 1880% are achieved, respectively, at 405 nm illumination with fast response time of 20 ms. In addition, the photodetector exhibits a decent photoresponsivity of 33.4 mA/W at zero bias, revealing the photodetector works well in the self-driven mode. Our work suggests that a PtSe[sub.2]/MoS[sub.2] heterostructure could be a potential candidate for the high-performance photodetection applications.
Journal Article
Semiconductors at the Intersection of Geoeconomics, Technonationalism, and Global Value Chains
This study provides a historical and contemporary analysis of the United States’ strategies in the global semiconductor industry, framed within Joseph Nye’s three-dimensional chessboard analysis. This study examines the strategic responses of the United States from the 1980s to the present, connecting these shifts to changes in international politics and geoeconomic alliances. It scrutinizes how the U.S. utilized its unipolar power to respond to Japan’s growing semiconductor industry influence in the 1980s and its adoption of free-market principles during the globalization era of the 1990s and 2000s. It further discusses how these multilateral shifts have led to a resurgence of technonationalism in the late 2010s, responding to asymmetric interdependence in the global value chain of the semiconductor industry. This research contributes to the comprehension of the dynamics of the industry within international politics and suggests insights into the ongoing Sino–American competition and strategic realignment in the sector.
Journal Article