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Modern semiconductor devices for integrated circuits
'Modern Semiconductor Devices for Integrated Circuits' introduces students to the world of modern semiconductor devices with an emphasis on integrated circuit applications.
Microstructure Optimization of Thermoelectric τsub.1-Alsub.2Fesub.3Sisub.3 via Graded Temperature Heat Treatments
To investigate the relationship between microstructure, chemical composition, and thermoelectric properties, we have applied graded temperature heat treatments to recently developed τ[sub.1]-Al[sub.2]Fe[sub.3]Si[sub.3]-based thermoelectric (FAST) materials formed by a peritectic reaction. We investigated microstructures, chemical compositions, and Seebeck coefficients as continuous functions of heat treatment temperature. The τ1 phase can become p- and n-type semiconductors without doping by changing the Al/Si ratio. The Seebeck coefficient was maximized, exceeding |S| > 140 μVK[sup.−1] for both p- and n-type materials, by heat treatment at 1173 K for 24 h through microstructural optimization. These results show that combining the graded temperature heat treatments and spatial mapping measurements of thermoelectric properties gives effective routes to determine the suitable heat treatment temperature for materials with multiphase microstructure.
Journal Article
Enhanced UVC Responsivity of Heteroepitaxial α-Gasub.2Osub.3 Photodetector with Ultra-Thin HfOsub.2 Interlayer
In this study, the influence of HfO[sub.2] interlayer thickness on the performance of heteroepitaxial α-Ga[sub.2]O[sub.3] layer-based metal–insulator–semiconductor–insulator–metal (MISIM) ultraviolet photodetectors is examined. A thin HfO[sub.2] interlayer enhances the interface quality and reduces the density of interface traps, thereby improving the performance of UVC photodetectors. The fabricated device with a 1 nm HfO[sub.2] interlayer exhibited a significantly reduced dark current and higher photocurrent than a conventional metal–semiconductor–metal (MSM). Specifically, the 1 nm HfO[sub.2] MISIM device demonstrated a photocurrent of 2.3 μA and a dark current of 6.61 pA at 20 V, whereas the MSM device exhibited a photocurrent of 1.1 μA and a dark current of 73.3 pA. Furthermore, the photodetector performance was comprehensively evaluated in terms of responsivity, response speed, and high-temperature operation. These results suggest that the proposed ultra-thin HfO[sub.2] interlayer is an effective strategy for enhancing the performance of α-Ga[sub.2]O[sub.3]-based UVC photodetectors by simultaneously suppressing dark currents and increasing photocurrents and ultimately demonstrate its potential for stable operation under extreme environmental conditions.
Journal Article
Nanoscale Field Effect Transistors
Nanoscale Field Effect Transistors: Emerging Applications is a comprehensive guide to understanding, simulating, and applying nanotechnology for design and development of specialized transistors. This book provides in-depth information on the modeling, simulation, characterization, and fabrication of semiconductor FET transistors. The book contents are structured into chapters that explain concepts with simple language and scientific references. The core of the book revolves around the fundamental physics that underlie the design of solid-state nanostructures and the optimization of these nanoscale devices for real-time applications. Readers will learn how to achieve superior performance in terms of reduced size and weight, enhanced subthreshold characteristics, improved switching efficiency, and minimal power consumption. Key Features:Quick summaries: Each chapter provides an introduction and summary to explain concepts in a concise manner. In-Depth Analysis: This book provides an extensive exploration of the theory and practice of nanoscale materials and devices, offering a detailed understanding of the technical aspects of Nano electronic FET transistors. Multidisciplinary Approach: It discusses various aspects of nanoscale materials and devices for applications such as quantum computation, biomedical applications, energy generation and storage, environmental protection, and more. It showcases how nanoscale FET devices are reshaping multiple industries. References: Chapters include references that encourage advanced readers to further explore key topics. Designed for a diverse audience, this book caters to students, academics and advanced readers interested in learning about Nano FET devices. ReadershipStudents, academics and advanced readers.
eBook
Organic sensors : materials and applications
This book reviews the state of the art in the use of organic materals as physical, chemical and biomedical sensors in a variety of application settings. Topics covered include organic semiconductors for chemical and physical sensing; conducting polymers in sensor applications; chemically functionalized organic semiconductors for highly selective sensing; composite organic-inorganic sensors; artificial skin applications; organic thin film transistor strain gauges for biomedical applications; OTFT infrared sensors for touchless human-machine interaction; smart fabric sensors and e-textile technologie; image capture with organic sensors; organic gas sensors and electronic noses; electrolyte gated organic transistors for bio-chemical sensing; ion-selective organic electrochemical transistors; DNA biosensors; metabolic organic sensors; and conductive polymer based sensors for biomedical applications.
BOOK
Room-Temperature with a 2.6 µm Cutoff Wavelength
Highly sensitive infrared photodetectors are needed in numerous sensing and imaging applications. In this paper, we report on extended short-wave infrared (e-SWIR) avalanche photodiodes (APDs) capable of operating at room temperature (RT). To extend the detection wavelength, the e-SWIR APD utilizes a higher indium (In) composition, specifically In[sub.0.3]Ga[sub.0.7]As[sub.0.25]Sb[sub.0.75]/GaSb heterostructures. The detection cut-off wavelength is successfully extended to 2.6 µm at RT, as verified by the Fourier Transform Infrared Spectrometer (FTIR) detection spectrum measurement at RT. The In[sub.0.3]Ga[sub.0.7]As[sub.0.25]Sb[sub.0.75]/GaSb heterostructures are lattice-matched to GaSb substrates, ensuring high material quality. The noise current at RT is analyzed and found to be the shot noise-limited at RT. The e-SWIR APD achieves a high multiplication gain of M~190 at a low bias of V[sub.bias]=−2.5V under illumination of a distributed feedback laser (DFB) with an emission wavelength of 2.3 µm. A high photoresponsivity of R>140A/W is also achieved at the low bias of V[sub.bias]=−2.5V. This type of highly sensitive e-SWIR APD, with a high internal gain capable of RT operation, provides enabling technology for e-SWIR sensing and imaging while significantly reducing size, weight, and power consumption (SWaP).
Journal Article
Quantum transport in semiconductor devices
This text treats the modeling and simulation of semiconductor devices in the quantum regime with particles, beginning with the early, and current, views of particles in quantum mechanics, and the full quantum mechanical approaches that make full use of this particle approach. Particle-based simulation techniques of quantum devices have the additional advantage of providing very simple and intuitive ways of understanding the transport of electrons, allowing a demystifying view of quantum phenomena in semiconductor devices. This is the first book to combine quantum transport and particle Monte Carlo techniques with a focus on modern semiconductor devices. Written in clear and accessible language suitable for graduate students, formal and technical details are included in several appendices, and a list of exercises and references for further reading are added at the end of each chapter.
eBook