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In recent years, photonic crystal fibers (PCFs) have attracted increasing attention. Compared with traditional optical fibers, PCFs exhibit many unique optical properties and superior performance due to their high degree of structural design freedom. Using large-mode area (LMA) fibers with single-mode operation is essential to overcoming emerging problems as the power of fiber lasers scales up, which can effectively reduce the power density and mitigate the influence of nonlinear effects. With a brief introduction of the concept, classification, light transmission mechanism, basic properties, and theoretical analysis methods of PCFs, this paper mainly compiles the worldwide development of large-mode area and polarization-maintaining (PM) PCFs, and finally proposes possible technical routes to realize the single-mode operation of LMA-PCFs and PM-LMA-PCFs. Finally, the future development prospects of the PCFs are discussed.

Single-mode operation of fibre-pigtailed distributed feedback semiconductor lasers in the 2.05 μm range has been demonstrated. The lasers are packaged inside standard butterfly modules with output powers in excess of 10 mW at the end of polarisation maintaining optical fibre. The fibre-pigtailed lasers show excellent sidemode suppression ratios ( > 50 dB) and have a mode-hop free tunability larger than 1 nm. The output of the optical fibre has linear polarisation with better than 20 dB extinction over the operating current and temperatures.

The development of classical and quantum information–processing technology calls for on-chip integrated sources of structured light. Although integrated vortex microlasers have been previously demonstrated, they remain static and possess relatively high lasing thresholds, making them unsuitable for high-speed optical communication and computing. We introduce perovskite-based vortex microlasers and demonstrate their application to ultrafast all-optical switching at room temperature. By exploiting both mode symmetry and far-field properties, we reveal that the vortex beam lasing can be switched to linearly polarized beam lasing, or vice versa, with switching times of 1 to 1.5 picoseconds and energy consumption that is orders of magnitude lower than in previously demonstrated all-optical switching. Our results provide an approach that breaks the long-standing trade-off between low energy consumption and high-speed nanophotonics, introducing vortex microlasers that are switchable at terahertz frequencies.

Realization of one-chip, ultra-large-area, coherent semiconductor lasers has been one of the ultimate goals of laser physics and photonics for decades. Surface-emitting lasers with two-dimensional photonic crystal resonators, referred to as photonic-crystal surface-emitting lasers (PCSELs), are expected to show promise for this purpose. However, neither the general conditions nor the concrete photonic crystal structures to realize 100-W-to-1-kW-class single-mode operation in PCSELs have yet to be clarified. Here, we analytically derive the general conditions for ultra-large-area (3~10 mm) single-mode operation in PCSELs. By considering not only the Hermitian but also the non-Hermitian optical couplings inside PCSELs, we mathematically derive the complex eigenfrequencies of the four photonic bands around the Γ point as well as the radiation constant difference between the fundamental and higher-order modes in a finite-size device. We then reveal concrete photonic crystal structures which allow the control of both Hermitian and non-Hermitian coupling coefficients to achieve 100-W-to-1-kW-class single-mode lasing. Here, the authors analytically derive the general conditions for 100-W-to-1-kW-class single-mode operation in ultra-large-area (3~10 mm) photonic crystal lasers. Such high power single-mode semiconductor lasers will bring innovation to a wide variety of fields.

Single-aperture cavities are a key component of lasers that are instrumental for the amplification and emission of a single light mode. However, the appearance of high-order transverse modes as the size of the cavities increases has frustrated efforts to scale-up cavities while preserving single-mode operation since the invention of the laser six decades ago 1 – 8 . A suitable physical mechanism that allows single-mode lasing irrespective of the cavity size—a ‘scale invariant’ cavity or laser—has not been identified yet. Here we propose and demonstrate experimentally that open-Dirac electromagnetic cavities with linear dispersion—which in our devices are realized by a truncated photonic crystal arranged in a hexagonal pattern—exhibit unconventional scaling of losses in reciprocal space, leading to single-mode lasing that is maintained as the cavity is scaled up in size. The physical origin of this phenomenon lies in the convergence of the complex part of the free spectral range in open-Dirac cavities towards a constant governed by the loss rates of distinct Bloch bands, whereas for common cavities it converges to zero as the size grows, leading to inevitable multimode emission. An unconventional flat-envelope fundamental mode locks all unit cells in the cavity in phase, leading to single-mode lasing. We name such sources Berkeley surface-emitting lasers (BerkSELs) and demonstrate that their far-field corresponds to a topological singularity of charge two, in agreement with our theory. Open-Dirac cavities unlock avenues for light–matter interaction and cavity quantum electrodynamics. A photonic crystal cavity arranged in a hexagonal pattern shows unconventional losses that allow single-mode lasing operation to be maintained as the cavity is scaled up in size.

Optical isolators are indispensable components of almost any optical system and are used to protect a laser from unwanted reflections for phase-stable coherent operation. The emergence of chip-scale optical systems, powered by semiconductor lasers that are integrated on the same chip, has generated a demand for a fully integrated optical isolator. Conventional approaches, which rely on the use of magneto-optic materials to break Lorentz reciprocity, present substantial challenges in terms of material integration. Although alternative magnetic-free approaches have been explored, an integrated isolator with a low insertion loss, high isolation ratio, broad bandwidth and low power consumption on a monolithic material platform is yet to be achieved. Here we realize a non-reciprocal travelling-wave-based electro-optic isolator on thin-film lithium niobate. The isolator enables a maximum optical isolation of 48.0 dB with an on-chip insertion loss of 0.5 dB and uses a single-frequency microwave drive power of 21 dBm. The isolation ratio remains larger than 37 dB across a tunable optical wavelength range from 1,510 to 1,630 nm. We realize a hybrid distributed feedback laser–lithium niobate isolator module that successfully protects the single-mode operation and linewidth of the laser from reflection. Our result represents an important step towards a practical high-performance optical isolator on chip.An integrated electro-optic isolator on thin-film lithium niobate enables non-reciprocal isolation by microwave-driven travelling-wave phase modulation. The isolator exhibits a maximum optical isolation of 48.0 dB at around 1,553 nm and an on-chip insertion loss of 0.5 dB.

Highly compact lasers with a low threshold and stable single-mode operation are in great demand for integrated optoelectronics. However, considerable side leakages and radiation losses in small cavities substantially degrade the quality ( Q ) factor, posing a substantial obstacle in pursuing high-performance miniature lasers. Here we propose and experimentally demonstrate a flat-band laser supplemented by multiple bound states in the continuum. By simultaneously confining light in all three dimensions, a high Q factor of ~1,440 in an ultracompact terahertz quantum cascade laser cavity with a lateral size of ~3 λ is reported. The field confinement makes it possible to realize an electrically pumped single-mode terahertz laser with a low threshold current density, despite the small device footprint. This surface-emitting laser emits a well-defined beam with good directionality. The demonstrated multibound-state-assisted flat-band design is also applicable to other wavelength regimes, offering a route to energy-efficient, monolithically integrated and ultracompact laser sources that suit a wide range of applications. A laser design that exploits multiple bound states on a flat band to tightly confine light in three dimensions yields an ultracompact terahertz quantum cascade laser cavity with a lateral size of ~3 λ .

Four-wave mixing is a nonlinear optical phenomenon that can be used for wideband low-noise optical amplification and wavelength conversion. It has been extensively investigated for applications in communications 1 , computing 2 , metrology 3 , imaging 4 and quantum optics 5 . With its advantages of small footprint, large nonlinearity and dispersion-engineering capability, optical integrated waveguides are excellent candidates for realizing high-gain and large-bandwidth four-wave mixing for which anomalous dispersion is a key condition. Various waveguides based on, for example, silicon, aluminium gallium arsenide and nonlinear glass have been studied 6 , 7 , 8 , 9 – 10 , but suffer from considerable gain and bandwidth reductions, as conventional design approaches for anomalous dispersion result in multi-mode operation. We present a methodology for fabricating nonlinear waveguides with simultaneous single-mode operation and anomalous dispersion for ultra-broadband operation and high-efficiency four-wave mixing. Although we implemented this in silicon nitride waveguides, the design approach can be used with other platforms as well. By using higher-order dispersion, we achieved unprecedented amplification bandwidths of more than 300 nm in these ultra-low-loss integrated waveguides. Penalty-free all-optical wavelength conversion of 100 Gbit s −1 data in a single optical channel of over 200 nm was realized. These single-mode dispersion-engineered nonlinear waveguides could become practical building blocks in various nonlinear photonics applications. An integrated optical parametric amplifier with an ultra-wide bandwidth was implemented using geometrically optimized low-loss nonlinear rib silicon nitride waveguides including the demonstration of broadband all-optical wavelength conversion.

Two-dimensional (2D) semiconductors are opening a new platform for revitalizing widely spread optoelectronic applications. The realisation of room-temperature vertical 2D lasing from monolayer semiconductors is fundamentally interesting and highly desired for appealing on-chip laser applications such as optical interconnects and supercomputing. Here, we present room-temperature low-threshold lasing from 2D semiconductor activated vertical-cavity surface-emitting lasers (VCSELs) under continuous-wave pumping. 2D lasing is achieved from a 2D semiconductor. Structurally, dielectric oxides were used to construct the half-wavelength-thick cavity and distributed Bragg reflectors, in favour of single-mode operation and ultralow optical loss; in the cavity centre, the direct-bandgap monolayer WS 2 was embedded as the gain medium, compatible with the planar VCSEL configuration and the monolithic integration technology. This work demonstrates 2D semiconductor activated VCSELs with desirable emission characteristics, which represents a major step towards practical optoelectronic applications of 2D semiconductor lasers. Two-dimensional materials have recently emerged as interesting materials for optoelectronic applications. Here, Shang et al. demonstrate two-dimensional semiconductor activated vertical-cavity surface-emitting lasers where both the gain material and the lasing characteristics are two-dimensional.

An optoelectronic oscillator (OEO) is a microwave photonic system that produces microwave signals with ultralow phase noise using a high-quality-factor optical energy storage element. This type of oscillator is desired in various practical applications, such as communication links, signal processing, radar, metrology, radio astronomy, and reference clock distribution. Recently, new mode control and selection methods based on Fourier domain mode-locking and parity-time symmetry have been proposed and experimentally demonstrated in OEOs, which overcomes the long-existing mode building time and mode selection problems in a traditional OEO. Due to these mode control and selection methods, continuously chirped microwave waveforms can be generated directly from the OEO cavity and single-mode operation can be achieved without the need of ultranarrowband filters, which are not possible in a traditional OEO. Integrated OEOs with a compact size and low power consumption have also been demonstrated, which are key steps toward a new generation of compact and versatile OEOs for demanding applications. We review recent progress in the field of OEOs, with particular attention to new mode control and selection methods, as well as chip-scale integration of OEOs.