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result(s) for
"Switching (polarity)"
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Optimization of electrocoagulation process parameters for enhancing phosphate removal in a biofilm-electrocoagulation system
2021
This study aimed to enhance the removal of phosphate in synthetic rural sewage by using a continuous electrocoagulation (EC) combined with biofilm process in an integrated system. Characteristic indexes of biofilm process effluent covering pH, dissolved oxygen (DO), suspended solids (SS), chemical oxygen demand (COD) and phosphate maintained a narrow fluctuation range and tended not readily to influence the phosphate removal of subsequent electrocoagulation. Three parameters including inter-electrode distance, current intensity and reaction time were selected to investigate the performance of enhancing phosphate removal. On the strength of single-factor tests, the Box-Behnken design (BBD) coupled with response surface methodology (RSM) was applied to investigate the individual and mutual interaction impacts of the major operating parameters and to optimize conditions. The optimum conditions were found to be inter-electrode distance of 1.8 cm, current density of 2.1 mA/cm2 and EC reaction time of 34 min, and phosphate removal efficiency of 90.24% was achieved along with less than 1 mg/L in case of periodic polarity switching mode, which raised removal efficiency by 10.10% and reduced operating cost by 0.13 CNY/g PO4− compared to non-switching mode. The combination of biofilm processing and electrocoagulation treatment was proven to be a valid and feasible method for enhancing phosphate removal.
Journal Article
Ganglioside isomer analysis using ion polarity switching liquid chromatography-tandem mass spectrometry
2021
Gangliosides are ubiquitously present on cell surface. They are more abundantly expressed in nerve cells and tissues and involved in pathology of various diseases. Diversity of molecular structures in the carbohydrate head group, fatty acyl, and long chain base increases the complexity of analyzing gangliosides. In this study, an ultrahigh-performance liquid chromatography-tandem mass spectrometry method is developed for analysis of the co-eluting ganglioside isomers, which uses ion polarity switching to integrate glycan head isomer identification, ceramide isomer differentiation, and quantification of ganglioside into one analysis. The method is facilitated with an extensive ganglioside target list by combining the various glycan head groups, long chain bases, and the experimentally determined fatty acyls. Correlation between the retention time of ganglioside and its ceramide total carbon number is experimentally validated and used to predict retention time of ganglioside target list for scheduling the final multiple reaction monitoring method. This method was validated according to the FDA guidelines: 96.5% of gangliosides with good accuracy (80–120%), precision (< 15%), and linearity R2 > 0.99. The authenticated gangliosides were quantified from mouse brain by isotope dilution. Overall, 165 gangliosides were quantified using 10 mg mouse brain tissue, including 100 isomers of GM1, GM2, GM3, GD1a, GD1b, GD2, GD3, and GT1b.
Journal Article
A Proof-of-Concept Study for the Strong Electrolyte (SE) Switching and the Combined CO2-SE Switching of the Polarity of Tertiary Amine for Lipid Separation Application
2026
Tertiary amines such as N,N-dimethyl-cyclohexylamine (DMCHA) are recently explored as candidate solvents for the extraction and separation of lipids from algal biomass. DMCHA exhibits the interesting property of polarity switching which is based on the interaction of DMCHA with CO2, termed CO2 switching. Although this approach exhibits certain advantages, various issues have to be improved to address for example the duration required for process optimization, the energy demand, or the low solvent recovery. The aim of this work is the examination of amine recovery from an oil extract, utilizing strong electrolytes (SE) such as HCl for protonation and NaOH for deprotonation of amine, instead of conventional CO2 switching. It was found that the acid based hydrophobic-to-hydrophilic switching and the alkali based hydrophilic-to-hydrophobic back-switching carried out in the order of few minutes, a considerably shorter time compared to few hours required by gas switching, resulting in addition to higher amine recovery. In addition, the combined CO2 switching with SE-back switching using NaOH proved to be a promising approach for large-scale applications, exhibiting several advantages related to technical, economic, environmental and safety issues.
Journal Article
Effect of Multiple Doping Elements on Polarity Switching of Polycrystalline SnSe Semiconductor
2024
Material selection for thermoelectric modules and generators presents a considerable challenge. In commercially available thermoelectric generators, alloys with a high percentage of doping element are used to achieve different semiconductor polarity. This introduces mechanical stresses to the system due to the varying thermal expansion rates. Previous studies have demonstrated that the semiconductor polarity of SnSe alloys can be altered through Sb or Bi doping. This paper outlines a modified, scalable and cost-effective direct synthesis process for SnSe alloys, employing Sb, Bi, Ag, Ni, In and Mg as dopants. Polarity switching in the synthesized materials was observed with Bi doping, occurring in similar regions as observed with monocrystalline Sb. Additionally, In doping led to a significant increase in the Seebeck coefficient. Doping elements exhibited minimal influence on the crystal lattice of the material, with only minor shifts in lattice parameters noted. Crystallography analysis revealed a significant preferred orientation, consistent with the material’s documented propensity to form and align in layers, a characteristic observable even to the naked eye and confirmed through optical and electron microscopy. Furthermore, we have developed and thoroughly calibrated an in-house apparatus for determining the Seebeck coefficient of thermoelectric materials, based on the already published methodology, which describes a method for determining the electrical conductivity of disk- and rod-shaped samples.
Journal Article
Multiplex Mass Spectrometric Imaging with Polarity Switching for Concurrent Acquisition of Positive and Negative Ion Images
2013
We have recently developed a multiplex mass spectrometry imaging (MSI) method which incorporates high mass resolution imaging and MS/MS and MS
3
imaging of several compounds in a single data acquisition utilizing a hybrid linear ion trap-Orbitrap mass spectrometer (Perdian and Lee,
Anal. Chem.
82
, 9393–9400,
2010
). Here we extend this capability to obtain positive and negative ion MS and MS/MS spectra in a single MS imaging experiment through polarity switching within spiral steps of each raster step. This methodology was demonstrated for the analysis of various lipid class compounds in a section of mouse brain. This allows for simultaneous imaging of compounds that are readily ionized in positive mode (e.g., phosphatidylcholines and sphingomyelins) and those that are readily ionized in negative mode (e.g., sulfatides, phosphatidylinositols and phosphatidylserines). MS/MS imaging was also performed for a few compounds in both positive and negative ion mode within the same experimental set-up. Insufficient stabilization time for the Orbitrap high voltage leads to slight deviations in observed masses, but these deviations are systematic and were easily corrected with a two-point calibration to background ions.
Figure
ᅟ
Journal Article
Handedness anomaly in a non-collinear antiferromagnet under spin–orbit torque
by
Uchimura, Tomohiro
,
Hou, Justin T
,
Zhang, Pengxiang
in
Antiferromagnetism
,
Direct current
,
Ferromagnetism
2023
Non-collinear antiferromagnets are an emerging family of spintronic materials because they not only possess the general advantages of antiferromagnets but also enable more advanced functionalities. Recently, in an intriguing non-collinear antiferromagnet Mn3Sn, where the octupole moment is defined as the collective magnetic order parameter, spin–orbit torque (SOT) switching has been achieved in seemingly the same protocol as in ferromagnets. Nevertheless, it is fundamentally important to explore the unknown octupole moment dynamics and contrast it with the magnetization vector of ferromagnets. Here we report a handedness anomaly in the SOT-driven dynamics of Mn3Sn: when spin current is injected, the octupole moment rotates in the opposite direction to the individual moments, leading to a SOT switching polarity distinct from ferromagnets. By using second-harmonic and d.c. magnetometry, we track the SOT effect onto the octupole moment during its rotation and reveal that the handedness anomaly stems from the interactions between the injected spin and the unique chiral-spin structure of Mn3Sn. We further establish the torque balancing equation of the magnetic octupole moment and quantify the SOT efficiency. Our finding provides a guideline for understanding and implementing the electrical manipulation of non-collinear antiferromagnets, which in nature differs from the well-established collinear magnets.In the non-collinear antiferromagnet Mn3Sn, a spin–orbit torque makes the collective octupole moment and individual moments rotate in opposite directions, leading to a sign-reversed switching polarity compared with collinear magnets.
Journal Article
Controllable field-free switching of perpendicular magnetization through bulk spin-orbit torque in symmetry-broken ferromagnetic films
2021
Programmable magnetic field-free manipulation of perpendicular magnetization switching is essential for the development of ultralow-power spintronic devices. However, the magnetization in a centrosymmetric single-layer ferromagnetic film cannot be switched directly by passing an electrical current in itself. Here, we demonstrate a repeatable bulk spin-orbit torque (SOT) switching of the perpendicularly magnetized CoPt alloy single-layer films by introducing a composition gradient in the thickness direction to break the inversion symmetry. Experimental results reveal that the bulk SOT-induced effective field on the domain walls leads to the domain walls motion and magnetization switching. Moreover, magnetic field-free perpendicular magnetization switching caused by SOT and its switching polarity (clockwise or counterclockwise) can be reversibly controlled in the IrMn/Co/Ru/CoPt heterojunctions based on the exchange bias and interlayer exchange coupling. This unique composition gradient approach accompanied with electrically controllable SOT magnetization switching provides a promising strategy to access energy-efficient control of memory and logic devices.
A major challenge of spintronics is achieving magnetic field free electrical control of magnetisation. Here, Xie et al. achieve perpendicular magnetisation switching in a CoPt alloy, breaking inversion symmetry by varying the composition of the alloy in the growth direction.
Journal Article
Magnetization switching in polycrystalline Mn3Sn thin film induced by self-generated spin-polarized current
2022
Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current inspires us to explore the magnetization switching of chiral spins using self-generated spin torque. Here, we demonstrate the electric switching of noncollinear antiferromagnetic state in Mn
3
Sn by observing a crossover from conventional spin-orbit torque to the self-generated spin torque when increasing the MgO thickness in Ta/MgO/Mn
3
Sn polycrystalline films. The spin current injection from the Ta layer can be controlled and even blocked by varying the MgO thickness, but the switching sustains even at a large MgO thickness. Furthermore, the switching polarity reverses when the MgO thickness exceeds around 3 nm, which cannot be explained by the spin-orbit torque scenario due to spin current injection from the Ta layer. Evident current-induced switching is also observed in MgO/Mn
3
Sn and Ti/Mn
3
Sn bilayers, where external injection of spin Hall current to Mn
3
Sn is negligible. The inter-grain spin-transfer torque induced by spin-polarized current explains the experimental observations. Our findings provide an alternative pathway for electrical manipulation of non-collinear antiferromagnetic state without resorting to the conventional bilayer structure.
Under an applied current, chiral antiferromagnets, such as Mn
3
Sn, can produce a spin-polarized current. Here, by varying the thickness of a buffering layer, the authors show that this spin-polarized current can drive self-induced switching in polycrystalline Mn
3
Sn.
Journal Article
Electric-field control of field-free spin-orbit torque switching via laterally modulated Rashba effect in Pt/Co/AlOx structures
2021
Spin-orbit coupling effect in structures with broken inversion symmetry, known as the Rashba effect, facilitates spin-orbit torques (SOTs) in heavy metal/ferromagnet/oxide structures, along with the spin Hall effect. Electric-field control of the Rashba effect is established for semiconductor interfaces, but it is challenging in structures involving metals owing to the screening effect. Here, we report that the Rashba effect in Pt/Co/AlO
x
structures is laterally modulated by electric voltages, generating out-of-plane SOTs. This enables field-free switching of the perpendicular magnetization and electrical control of the switching polarity. Changing the gate oxide reverses the sign of out-of-plane SOT while maintaining the same sign of voltage-controlled magnetic anisotropy, which confirms the Rashba effect at the Co/oxide interface is a key ingredient of the electric-field modulation. The electrical control of SOT switching polarity in a reversible and non-volatile manner can be utilized for programmable logic operations in spintronic logic-in-memory devices.
A major challenge for spin based electronics is the electrical control of magnetization. Here, Kang et al demonstrate how electric field control of the Rashba effect in a Pt/Co/AlOx can enable control of the spin-orbit torque and allow for field free switching of the magnetization.
Journal Article
Light intensity-induced photocurrent switching effect
2020
A better control over processes responsible for the photocurrent generation in semiconductors and nanocomposites is essential in the fabrication of photovoltaic devices, efficient photocatalysts and optoelectronic elements. Therefore, new approaches towards photochemical properties tuning are intensively searched for. Among numerous parameters, the photocurrent polarity is of great importance to the overall performance of a device. Usually, the polarity is controlled through an alignment of electronic states/bands, tailoring of applied potential or suitable selection of incident light wavelengths. In most scenarios though, the influence of light intensity is somehow neglected and either some arbitrarily chosen, natural conditions are mimicked or this parameter is varied only in a narrow range. Here we present a ternary nanocomposite in which the persistent photocurrent polarity switching is achieved through changes in the light intensity. We also present arguments suggesting this behaviour is of a general character and should be considered also in other photochemical systems.
A better understanding of processes responsible for photocurrent generation in semiconductors and nanocomposites is essential in many applications. Here, authors use a ZnO-based hybrid material to demonstrate an unusual photocurrent switching effect induced by varying irradiation intensities.
Journal Article