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Increasing performance demands and shorter use lifetimes of consumer electronics have resulted in the rapid growth of electronic waste. Currently, consumer electronics are typically made with nondecomposable, nonbiocompatible, and sometimes even toxic materials, leading to serious ecological challenges worldwide. Here, we report an example of totally disintegrable and biocompatible semiconducting polymers for thin-film transistors. The polymer consists of reversible imine bonds and building blocks that can be easily decomposed under mild acidic conditions. In addition, an ultrathin (800-nm) biodegradable cellulose substrate with high chemical and thermal stability is developed. Coupled with iron electrodes, we have successfully fabricated fully disintegrable and biocompatible polymer transistors. Furthermore, disintegrable and biocompatible pseudo-complementary metal–oxide–semiconductor (CMOS) flexible circuits are demonstrated. These flexible circuits are ultrathin (<1 μm) and ultralightweight (∼2 g/m²) with low operating voltage (4 V), yielding potential applications of these disintegrable semiconducting polymers in low-cost, biocompatible, and ultralightweight transient electronics.

\"Over the last 25 years, dynamical mean-field theory (DMFT) has emerged as one of the most powerful new developments in many-body physics. Written by one of the key researchers in the field, this book presents the first comprehensive treatment of this ever-developing topic. Transport in Mutlilayered Nanostructures is varied and modern in its scope, and: Develops the formalism of many-body Green's functions using the equation-of-motion approach Applies DMFT to study transport in multilayered nanostructures, which is likely to be one of the most prominent applications of nanotechnology in the coming years Develops formalism first for the bulk and then for the inhomogeneous multilayered systems Describes in great detail the science behind the metal-insulator transition, electronic charge reconstruction, strongly correlated contributions to capacitance, and superconductivity Includes complete derivations and emphasizes how to carry out numerical calculations, including discussions of parallel programming algorithms Provides descriptions of the crossover from tunneling to thermally activated transport, of the properties of Josephson junctions with barriers tuned near the metal-insulator transition of thermoelectric coolers and power generators and of nonequilibrium extensions to determine current-voltage characteristics as applications of the theory A series of over 40 problems help develop the skills to allow readers to reach the level of being able to contribute to research. This book is suitable for an advanced graduate course in DMFT, and for individualized study by graduate students, postdoctoral fellows and advanced researchers wishing to enter the field\"-- Provided by publisher.

All-solid-state batteries (SSBs) are one of the most fascinating next-generation energy storage systems that can provide improved energy density and safety for a wide range of applications from portable electronics to electric vehicles. The development of SSBs was accelerated by the discovery of new materials and the design of nanostructures. In particular, advances in the growth of thin-film battery materials facilitated the development of all solid-state thin-film batteries (SSTFBs)—expanding their applications to microelectronics such as flexible devices and implantable medical devices. However, critical challenges still remain, such as low ionic conductivity of solid electrolytes, interfacial instability and difficulty in controlling thin-film growth. In this review, we discuss the evolution of electrode and electrolyte materials for lithium-based batteries and their adoption in SSBs and SSTFBs. We highlight novel design strategies of bulk and thin-film materials to solve the issues in lithium-based batteries. We also focus on the important advances in thin-film electrodes, electrolytes and interfacial layers with the aim of providing insight into the future design of batteries. Furthermore, various thin-film fabrication techniques are also covered in this review.

In perovskite solar cells, the interfaces between the perovskite and charge-transporting layers contain high concentrations of defects (about 100 times that within the perovskite layer), specifically, deep-level defects, which substantially reduce the power conversion efficiency of the devices 1 – 3 . Recent efforts to reduce these interfacial defects have focused mainly on surface passivation 4 – 6 . However, passivating the perovskite surface that interfaces with the electron-transporting layer is difficult, because the surface-treatment agents on the electron-transporting layer may dissolve while coating the perovskite thin film. Alternatively, interfacial defects may not be a concern if a coherent interface could be formed between the electron-transporting and perovskite layers. Here we report the formation of an interlayer between a SnO 2 electron-transporting layer and a halide perovskite light-absorbing layer, achieved by coupling Cl-bonded SnO 2 with a Cl-containing perovskite precursor. This interlayer has atomically coherent features, which enhance charge extraction and transport from the perovskite layer, and fewer interfacial defects. The existence of such a coherent interlayer allowed us to fabricate perovskite solar cells with a power conversion efficiency of 25.8 per cent (certified 25.5 per cent)under standard illumination. Furthermore, unencapsulated devices maintained about 90 per cent of their initial efficiency even after continuous light exposure for 500 hours. Our findings provide guidelines for designing defect-minimizing interfaces between metal halide perovskites and electron-transporting layers. An atomically coherent interlayer between the electron-transporting and perovskite layers in perovskite solar cells enhances charge extraction and transport from the perovskite, enabling high power conversion efficiency.

Topologically nontrivial spin textures have recently been investigated for spintronic applications. Here, we report on an ultrathin magnetic film in which individual skyrmions can be written and deleted in a controlled fashion with local spin-polarized currents from a scanning tunneling microscope. An external magnetic field is used to tune the energy landscape, and the temperature is adjusted to prevent thermally activated switching between topologically distinct states. Switching rate and direction can then be controlled by the parameters used for current injection. The creation and annihilation of individual magnetic skyrmions demonstrates the potential for topological charge in future information-storage concepts.

High-performance silicon transistors and thin-film transistors used in display technologies are fundamentally limited to miniaturization. Incorporating nanomaterials—such as carbon nanotubes, graphene, and related two-dimensional materials like molybdenum disulfide—into these devices as gate materials may circumvent some of these limitations. Franklin reviews the opportunities and challenges for incorporating nanomaterials into transistors to improve performance. Because high-performance transistors are distinct from thin-film transistors, incorporating them into flexible or transparent platforms raises new challenges. Science , this issue 10.1126/science.aab2750 For more than 50 years, silicon transistors have been continuously shrunk to meet the projections of Moore’s law but are now reaching fundamental limits on speed and power use. With these limits at hand, nanomaterials offer great promise for improving transistor performance and adding new applications through the coming decades. With different transistors needed in everything from high-performance servers to thin-film display backplanes, it is important to understand the targeted application needs when considering new material options. Here the distinction between high-performance and thin-film transistors is reviewed, along with the benefits and challenges to using nanomaterials in such transistors. In particular, progress on carbon nanotubes, as well as graphene and related materials (including transition metal dichalcogenides and X-enes), outlines the advances and further research needed to enable their use in transistors for high-performance computing, thin films, or completely new technologies such as flexible and transparent devices.

Bi2Te3‐based materials are not only the most important and widely used room temperature thermoelectric (TE) materials but are also canonical examples of topological insulators in which the topological surface states are protected by the time‐reversal symmetry. High‐performance thin films based on Bi2Te3 have attracted worldwide attention during the past two decades due primarily to their outstanding TE performance as highly efficient TE coolers and as miniature and flexible TE power generators for a variety of electronic devices. Moreover, intriguing topological phenomena, such as the quantum anomalous Hall effect and topological superconductivity discovered in Bi2Te3‐based thin films and heterostructures, have shaped research directions in the field of condensed matter physics. In Bi2Te3‐based films and heterostructures, delicate control of the carrier transport, film composition, and microstructure are prerequisites for successful device operations as well as for experimental verification of exotic topological phenomena. This review summarizes the recent progress made in atomic defect engineering, carrier tuning, and band engineering down to a nanoscale regime and how it relates to the growth and fabrication of high‐quality Bi2Te3‐based films. The review also briefly discusses the physical insight into the exciting field of topological phenomena that were so dramatically realized in Bi2Te3‐ and Bi2Se3‐based structures. It is expected that Bi2Te3‐based thin films and heterostructures will play an ever more prominent role as flexible TE devices collecting and converting low‐level (body) heat into electricity for numerous electronic applications. It is also likely that such films will continue to be a remarkable platform for the realization of novel topological phenomena. Bi2Te3‐based materials are one type of the most popular thermoelectric materials and topological insulators, whereby their thin films are particularly suitable for important applications in the efficient active cooling and self‐powered power supply for miniaturized/flexible electronic devices as well as in the low power electronics and quantum computation. Tremendous efforts regarding the delicate control of the atomic point defects, chemical composition, preferential orientation, magnetic doping, and also spin‐orbit coupling have been exerted for the optimization of electronic band structure, topological surface states, electrical and thermal transport, and topological electronic transport of Bi2Te3‐based thin films, and hence for the proof‐of‐principle demonstration and practical applications of Bi2Te3‐based thin film devices. It is widely accepted that Bi2Te3‐based thin films will be of great significance for thin‐film thermoelectric applications and for discovering novel topological phenomena and relevant applications in the near future.

van der Waals heterostructures constitute a new class of artificial materials formed by stacking atomically thin planar crystals. We demonstrated band structure engineering in a van der Waals heterostructure composed of a monolayer graphene flake coupled to a rotationally aligned hexagonal boron nitride substrate. The spatially varying interlayer atomic registry results in both a local breaking of the carbon sublattice symmetry and a long-range moiré superlattice potential in the graphene. In our samples, this interplay between short-and long-wavelength effects resulted in a band structure described by isolated superlattice minibands and an unexpectedly large band gap at charge neutrality. This picture is confirmed by our observation of fractional quantum Hall states at ±5/3 filling and features associated with the Hofstadter butterfly at ultrahigh magnetic fields.

Multiple exciton generation (MEG) refers to the creation of two or more electron-hole pairs from the absorption of one photon. Although MEG holds great promise, it has proven challenging to implement, and questions remain about the underlying photo-physical dynamics in nanocrystalline as well as molecular media. Using the model system of pentacene/fullerene bilayers and femtosecond nonlinear spectroscopies, we directly observed the multiexciton (ME) state ensuing from singlet fission (a molecular manifestation of MEG) in pentacene. The data suggest that the state exists in coherent superposition with the singlet populated by optical excitation. We also found that multiple electron transfer from the ME state to the fullerene occurs on a subpicosecond time scale, which is one order of magnitude faster than that from the triplet exciton state.