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The quest to realize new kinds of data storage devices has motivated recent studies in the field of magnetoelectric heterostructures. One of the most commonly investigated systems is Fe3O4/[Pb(Mg 1/3Nb2/3)O3]0.7–[PbTiO3]0.3 (PMN-PT), however, the interplay between different coupling mechanisms is not yet well understood. To disentangle the role of strain and polarisation influence in Fe3O4/PMN-PT, we report on magnetoelectric coupling measurements for different orientations of the applied magnetic field and for two different substrate cuts, PMN-PT(001) and PMN-PT(011). For Fe3O4/PMN-PT(011), having the sample aligned such that the magnetic field is parallel to the [011‾] easy axis leads to a remanent increase of the magnetisation for each electric field cycle. On the other hand, for the magnetic field along the [100] hard axis, the magnetisation follows a butterfly-like loop characteristic of strain coupling imparted by the substrate. For Fe3O4/PMN-PT(001), the magnetoelectric effect is a superposition of the observed behaviour of both in-plane directions in Fe3O4/PMN-PT(011). The magnetisation shows an initial remanent increase followed by a butterfly like loop. Polarised neutron reflectometry measurements on Fe3O4/PMN-PT(011) shows no difference between the behaviour at the interface and the bulk of the film and no decline of the interaction further away from the shared interface. Our results demonstrate the role of strain and polarisation on the magnetisation of the Fe3O4 layer and provide a clear step towards the design of future magnetoelectric systems.

Controlling the interlayer exchange coupling (IEC) in synthetic antiferromagnets (SAFs) using an electric field is a promising approach for developing energy‐efficient spintronic devices, as it enables magnetization switching without electrical current. In this study, the modulation of the IEC through electric field‐induced strain in a Co/Ru/Co SAF on a Pb(Mg1/3Nb2/3)O3‐PbTiO3 (PMN‐PT) multiferroic heterostructure is demonstrated. It is found that both the IEC and the uniaxial magnetic anisotropy energy are modulated by applying an electric field to the Co/Ru/Co/PMN‐PT structure. This modulation is evident from the behavior of the minor hysteresis loops observed in our experiments and micromagnetic simulations. Additionally, it is clarified that the in‐plane piezoelectric strain transferred from the PMN‐PT to the Co/Ru/Co SAF layer enhances the strength of the antiferromagnetic IEC. Notably, the efficiency of this enhancement due to piezoelectric strain is strongly correlated with the thickness of the Ru spacer, a finding that aligns with our first‐principles calculations. Controlling the IEC via the piezoelectric strain transfer effect using an electric field enables the manipulation of antiferromagnetic order with extremely low energy consumption, offering significant potential for energy‐efficient spintronic memory devices. Controlling the interlayer exchange coupling (IEC) in synthetic antiferromagnets (SAFs) using an electric field is a promising route toward energy‐efficient spintronic devices. In this study, electric field induced‐strain modulation of IEC in Co/Ru/Co SAF/PMN‐PT is demonstrated. The modulation efficiency depends on the initial IEC strength; stronger IECs lead to higher modulation efficiencies.

We studied in detail the in-plane magnetic properties of heterostructures based on a ferroelectric BaTiO3 overlayer deposited on a ferromagnetic La2/3Sr1/3MnO3 film grown epitaxially on pseudocubic (001)-oriented SrTiO3, (LaAlO3)0.3(Sr2TaAlO6)0.7 and LaAlO3 substrates. In this configuration, the combination of both functional perovskites constitutes an artificial multiferroic system with potential applications in spintronic devices based on the magnetoelectric effect. La2/3Sr1/3MnO3 single layers and BaTiO3/La2/3Sr1/3MnO3 bilayers using the pulsed-laser deposition technique. We analyzed the films structurally through X-ray reciprocal space maps and high-angle annular dark field microscopy, and magnetically via thermal demagnetization curves and in-plane magnetization versus applied magnetic field loops at room temperature. Our results indicate that the BaTiO3 layer induces an additional strain in the La2/3Sr1/3MnO3 layers close to their common interface. The presence of BaTiO3 on the surface of tensile-strained La2/3Sr1/3MnO3 films transforms the in-plane biaxial magnetic anisotropy present in the single layer into an in-plane uniaxial magnetic anisotropy. Our experimental evidence suggests that this change in the magnetic anisotropy only occurs in tensile-strained La2/3Sr1/3MnO3 film and is favored by an additional strain on the La2/3Sr1/3MnO3 layer promoted by the BaTiO3 film. These findings reveal an additional mechanism that alters the magnetic behavior of the ferromagnetic layer, and consequently, deserves further in-depth research to determine how it can modify the magnetoelectric coupling of this hybrid multiferroic system.

Magnetoelectric coupling phenomenon in multiferroics has attracted considerable research activities in the last decade due to its wide range of applications in spintronic, data storage and electrically tunable microwave devices. From the first realization of magnetoelectric coupling in Cr2O3, numerous single-phase and composite multiferroics have been explored for obtaining a stable room-temperature magnetoelectric coupling and many of them have been translated into device applications. Different magnetoelectric coupling effects are responsible for different device applications of multiferroic materials. Fundamental understanding of dynamics of these remarkable magnetoelectric coupling mechanisms in various multiferroic materials has been a prime aspect to develop new high-performance multiferroic devices. In this article, a comprehensive review on the mechanisms of breakthrough magnetoelectric coupling results in a variety of multiferroic materials has been presented with an intercomparison of their highest reported magnetoelectric coupling coefficients. A brief summary of some significant results on the room-temperature magnetoelectric coupling has been made that can be applied for practical magnetoelectric device fabrication.Graphical abstract representing different magnetoelectric coupling mechanisms in single phase and composite multiferroic materials.

ABN 3 -type nitride perovskites offer a rich platform for multifunctional materials but remain synthetically elusive. Here, we develop a machine learning (ML)-guided framework to expand the library of nitride perovskites and identify multiferroic candidates. By integrating positive-unlabeled (PU) learning with crystal graph convolutional neural networks (CGCNN), we screen 1465 ABN 3 compositions and predict 96 synthesizable compounds. Further symmetry and magnetic filtering yield 4 altermagnetic ferroelectric (AM-FE) perovskites. Among them, CeCrN 3 emerges as a promising candidate, exhibiting a bandgap of 0.30 eV, a spontaneous polarization of 0.59 μC/cm 2 , a high Curie temperature of 650 K, and a low polarization switching barrier of 53 meV, as confirmed by density functional theory (DFT) calculations. In addition, CeCrN 3 demonstrates a pronounced bulk photovoltaic effect (BPVE), with the shift current reaching 44 μA/V 2 and an injection current reaching 2.4 × 10 9  A/V 2 , both of which reverse upon FE switching. These findings not only advance the understanding of nitride perovskites but also provides a validated ML-DFT framework to guide experimental efforts in realizing novel functional materials.

The article discusses the effects of modifying bismuth ferrite BiFeO3 with rare-earth elements, REE, (large-sized, group 1, with 0.94 ≤ R¯ ≤ 1.04 Å - La, Pr, Nd, Sm, Eu, Gd, medium-sized, small-sized Group 2, with R¯ <0.94 Å - Tb, Dy, Ho, Er, Tu, Yb, Lu). The authors describe the study results of the influence of the crystallophysical parameters of stoichiometrically introduced dopants on the type of phase diagrams of Bi1-xREExFeO3 systems, the grain structure of ceramics, the dielectric spectra of samples, and the behaviour of their thermophysical characteristics over a wide temperature range. They show the possibility of using new multiferroic materials in artificial intelligence systems.

Flexible thin film with both good ferroelectric and ferromagnetic properties has more extensive applications in the field of flexible and/or wearable devices and sensors. In this experiment, the flexible Bi 0.9 Gd 0.1 Fe 0.98 Mn 0.02 O 3 (BGFMO) thin film is successfully deposited on fluorophlogopite (F-Mica) single-crystalline substrate by sol–gel method. The flexible BGFMO thin film exhibits a rhombohedrally distorted perovskite structure, uniform grain size, and a relatively smooth surface. It has good ferroelectricity, with a remnant polarization (P r ) value of 74.88 μC/cm 2 and ferromagnetism with anisotropic saturation magnetization (in-plane saturation magnetization of about 32.00 emu/cm 3 , out-of-plane saturation magnetization of about 29.80 emu/cm 3 ). The flexible thin film can maintain good ferroelectric properties at different frequencies and temperatures, and the ferroelectric properties can be adjusted by mechanical bending. Therefore, the flexible BGFMO thin film with excellent ferroelectric and ferromagnetic properties has great application potential in flexible electronic devices.

Multiferroic materials, particularly rare-earth orthochromates (RECrO\\(_3\\)), have garnered significant interest due to their unique magnetic and electric-polar properties, making them promising candidates for multifunctional devices. Although extensive research has been conducted on their antiferromagnetic (AFM) transition temperature (N\\(\\acute{\\textrm{e}}\\)el temperature, \\(T_\\textrm{N}\\)), ferroelectricity, and piezoelectricity, the effects of doping and substitution of rare-earth (RE) elements on these properties remain insufficiently explored. In this study, convolutional neural networks (CNNs) were employed to predict and analyze the physical properties of RECrO\\(_3\\) compounds under various doping scenarios. Experimental and literature data were integrated to train machine learning models, enabling accurate predictions of \\(T_\\textrm{N}\\), besides remanent polarization (\\(P_\\textrm{r}\\)) and piezoelectric coefficients (\\(d_{33}\\)). The results indicate that doping with specific RE elements significantly impacts \\(T_\\textrm{N}\\), with optimal doping levels identified for enhanced performance. Furthermore, high-entropy RECrO\\(_3\\) compounds were systematically analyzed, demonstrating how the inclusion of multiple RE elements influences magnetic properties. This work establishes a robust framework for predicting and optimizing the properties of RECrO\\(_3\\) materials, offering valuable insights into their potential applications in energy storage and sensor technologies.