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Perovskite‐organic tandem solar cells (TSCs) have emerged as a groundbreaking technology in the realm of photovoltaics, showcasing remarkable enhancements in efficiency and significant potential for practical applications. Perovskite‐organic TSCs also exhibit facile fabrication surpassing that of all‐perovskite or all‐organic TSCs, attributing to the advantageous utilization of orthogonal solvents enabling sequential solution process for each subcell. The perovskite‐organic TSCs capitalize on the complementary light absorption characteristics of perovskite and organic materials. There is a promising prospect of achieving further enhanced power conversion efficiencies by covering a broad range of the solar spectrum with optimized perovskite absorber, organic semiconductors as well as the interconnecting layer's optical and electrical properties. This review comprehensively analyzes the recent advancements in perovskite‐organic TSCs, highlighting the synergistic effects of combining perovskite with a low open‐circuit voltage deficit, organic materials with broader light absorption, and interconnecting layers with reduced optical and electrical loss. Meanwhile, the underlying device architecture design, regulation strategies, and key challenges facing the high performance of the perovskite‐organic TSCs are also discussed. Perovskite‐organic tandem solar cells (TSCs) have exhibited significant achievements in the interconnecting layers, perovskite, and organic solar cells, reducing the performance gap between perovskite‐perovskite and perovskite‐organic TSCs. Herein, we comprehensively analyze and discuss the recent advancements in perovskite‐organic TSCs, highlighting the synergistic effects and development of perovskite, organic, and interconnecting layers.

Under the groundswell of calls for the industrialization of perovskite solar cells (PSCs), wide‐bandgap (>1.7 eV) mixed halide perovskites are equally or more appealing in comparison with typical bandgap perovskites when the former's various potential applications are taken into account. In this review, the progress of wide‐bandgap organic–inorganic hybrid PSCs—concentrating on the compositional space, optimization strategies, and device performance—are summarized and the issues of phase segregation and voltage loss are assessed. Then, the diverse applications of wide‐bandgap PSCs in semitransparent devices, indoor photovoltaics, and various multijunction tandem devices are discussed and their challenges and perspectives are evaluated. Finally, the authors conclude with an outlook for the future development of wide‐bandgap PSCs. In this review, the progress of wide‐bandgap organic–inorganic hybrid perovskite solar cells (PSCs) are initially summarized and the issues of phase segregation and voltage loss are assessed. Then, the diverse applications of wide‐bandgap PSCs in semitransparent devices, indoor photovoltaics, and tandem devices are discussed and their challenges and perspectives are evaluated.

The light instability of CH3NH3PbIxBr3–x is one of the biggest challenges for its application in tandem solar cells. Here we show that an improved crystallinity and grain size of CH3NH3PbIxBr3–x films could stabilize these materials under one sun illumination, improving both the efficiency and stability of the wide‐bandgap perovskite solar cells.

Colloidal CsPbX3 (X = Br, Cl, and I) perovskite nanocrystals exhibit tunable bandgaps over the entire visible spectrum and high photoluminescence quantum yields in the green and red regions. However, the lack of highly efficient blue‐emitting perovskite nanocrystals limits their development for optoelectronic applications. Herein, neodymium (III) (Nd3+) doped CsPbBr3 nanocrystals are prepared through the ligand‐assisted reprecipitation method at room temperature with tunable photoemission from green to deep blue. A blue‐emitting nanocrystal with a central wavelength at 459 nm, an exceptionally high photoluminescence quantum yield of 90%, and a spectral width of 19 nm is achieved. First principles calculations reveal that the increase in photoluminescence quantum yield upon doping is driven by an enhancement of the exciton binding energy due to increased electron and hole effective masses and an increase in oscillator strength due to shortening of the PbBr bond. Putting these results together, an all‐perovskite white light‐emitting diode is successfully fabricated, demonstrating that B‐site composition engineering is a reliable strategy to further exploit the perovskite family for wider optoelectronic applications. Narrowband blue‐emitting CsPbBr3 perovskite nanocrystals with a photoluminescence quantum yield of 90% are achieved by B‐site doping of neodymium ions. The doping concentration can tune the emission spectrum in a controlled manner. First principles calculations reveal that dopant‐induced electronic changes dominate the bandgap tunability and the high quantum yield is associated with enhanced exciton binding energy and oscillator strength.

The elastic wave bandgap (BG) properties of locally resonant phononic crystal (LRPC) make it has great potential in the research and development of damping composite material and the application of vibration control engineering. However, the number of BG of the traditional LRPC is only one, the BG frequency range is too concentrated, and the multi-frequency BGs is not opened, so the application in practical engineering is limited. In response to the above issues, this paper designs a concentric ring cement-based locally resonant phononic crystal (CRCBLRPC) composite material, and studies and analyzes its BG characteristics. Firstly, the improved plane wave expansion method (IPWEM) and finite element method (FEM) are used to calculate the band structure of the CRCBLRPC. Secondly, the transfer function and BG mechanism of CRCBLRPC are calculated using FEM. Then, the factors affecting the BG of CRCBLRPC are analyzed. Finally, an equivalent model of spring-mass system is proposed to theoretically estimate the BG range of CRCBLRPC. The results show that the CRCBLRPC opens multi-frequency and low frequency BGs within the 200 Hz frequency band, and the number of BGs is more than that of the traditional LRPC. Within the BG frequency range, the CRCBLRPC has a good inhibition effect on vibration. Among them, the density of the scatterer and the elastic modulus of the coating layer are the main factors affecting the BG of the CRCBLRPC. The established spring-mass system equivalent model can accurately calculate the BG range of the CRCBLRPC. The research content and related conclusions of this paper provide new perspectives and insights for the study and design of LRPC composite materials with multi-frequency and low frequency BGs, and can also provide new ideas and methods for solving low frequency vibration in practical engineering.

Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to their extensive applications in the civil and military fields. Wide bandgap semiconductor-based UV detectors can detect UV light effectively, and nanowire structures can greatly improve the sensitivity of sensors with many quantum effects. This review summarizes recent developments in the classification and principles of UV detectors, i.e., photoconductive type, Schottky barrier type, metal-semiconductor-metal (MSM) type, p-n junction type and p-i-n junction type. The current state of the art in wide bandgap semiconductor materials suitable for producing nanowires for use in UV detectors, i.e., metallic oxide, III-nitride and SiC, during the last five years is also summarized. Finally, novel types of UV detectors such as hybrid nanostructure detectors, self-powered detectors and flexible detectors are introduced.

Ultraviolet (UV) photodetectors (PDs) are effective devices that convert UV radiation energy into electrical signals, and they are widely used in aerospace, chip manufacturing and other fields. At present, the design and manufacture of UV PDs based on wide bandgap semiconductor materials is also an important branch of optoelectronics technology. Wide bandgap semiconductor materials with strong UV absorption, high carrier mobility, exciton binding energy, and temperature resistance, have become ideal materials for fabricating high-performance UV PDs. Meanwhile, some novel materials have also been found to be suitable for the fabrication of UV optoelectronic devices in recent years, such as chalcogenide materials, double-layer hydroxide materials, and graphene-based materials. In this review, the research progress performance parameters, structures and commonly used materials of UV PDs is systematically introduced. In addition, the methods for optimizing device performance based on various property effects of materials are discussed in detail. The broad research prospect of some novel materials and corresponding application in UV PDs are explored, which provide a reference for future research and development of UV PDs.

This article provides a comprehensive review of wide and ultrawide bandgap power electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium nitride (GaN), and the emerging device diamond technology. Key parameters examined include bandgap, critical electric field, electron mobility, voltage/current ratings, switching frequency, and device packaging. The historical evolution of each material is traced from early research devices to current commercial offerings. Significant focus is given to SiC and GaN as they are now actively competing with Si devices in the market, enabled by their higher bandgaps. The paper details advancements in material growth, device architectures, reliability, and manufacturing that have allowed SiC and GaN adoption in electric vehicles, renewable energy, aerospace, and other applications requiring high power density, efficiency, and frequency operation. Performance enhancements over Si are quantified. However, the challenges associated with the advancements of these devices are also elaborately described: material availability, thermal management, gate drive design, electrical insulation, and electromagnetic interference. Alongside the cost reduction through improved manufacturing, material availability, thermal management, gate drive design, electrical insulation, and electromagnetic interference are critical hurdles of this technology. The review analyzes these issues and emerging solutions using advanced packaging, circuit integration, novel cooling techniques, and modeling. Overall, the manuscript provides a timely, rigorous examination of the state of the art in wide bandgap power semiconductors. It balances theoretical potential and practical limitations while assessing commercial readiness and mapping trajectories for further innovation. This article will benefit researchers and professionals advancing power electronic systems.

Ultra-wide bandgap semiconductor Ga 2 O 3 based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below the projected Ga 2 O 3 material limit. Major obstacles are high breakdown voltage requires low doping material and PN junction termination, contradicting with low specific on-resistance and simultaneous achieving of n- and p-type doping, respectively. In this work, we demonstrate that Ga 2 O 3 heterojunction PN diodes can overcome above challenges. By implementing the holes injection in the Ga 2 O 3 , bipolar transport can induce conductivity modulation and low resistance in a low doping Ga 2 O 3 material. Therefore, breakdown voltage of 8.32 kV, specific on-resistance of 5.24 mΩ⋅cm 2 , power figure-of-merit of 13.2 GW/cm 2 , and turn-on voltage of 1.8 V are achieved. The power figure-of-merit value surpasses the 1-D unipolar limit of GaN and SiC. Those Ga 2 O 3 power diodes demonstrate their great potential for next-generation power electronics applications. The simultaneous achievement of high breakdown voltage and low resistance is a contradictory point because it would require high and low doping simultaneously. Here, Zhou et al. achieve a power figure-of-merit of 13.2 GW/cm2 through hole injection and conductivity modulation effect.