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Frequent failures of the buffer layer in high-voltage cables have been reported in recent years, which causes great losses. White spots and ablation were found inside these fault cables. The mechanisms of such failure phenomenon are still unclear, which arouses great attention of researchers. On the basses of previous studies, the authors characterized the fault cable, and studied the influence of the voltage type, moisture distribution, pressure, the shape of aluminum sheet on the generation of white spots. The authors proved the complexation of the water blocking powder and aluminum ions by using EDS (Energy Dispersive Spectroscopy). This paper provides meaningful theoretical supports for the design of new longitudinal water blocking structures.

Cadmium telluride (CdTe), a metallic dichalcogenide material, was utilized as an absorber layer for thin film–based solar cells with appropriate configurations and the SCAPS–1D structures program was used to evaluate the results. In both known and developing thin film photovoltaic systems, a CdS thin–film buffer layer is frequently employed as a traditional n–type heterojunction partner. In this study, numerical simulation was used to determine a suitable non–toxic material for the buffer layer that can be used instead of CdS, among various types of buffer layers (ZnSe, ZnO, ZnS and In2S3) and carrier concentrations for the absorber layer (NA) and buffer layer (ND) were varied to determine the optimal simulation parameters. Carrier concentrations (NA from 2 × 1012 cm−3 to 2 × 1017 cm−3 and ND from 1 × 1016 cm−3 to 1 × 1022 cm−3) differed. The results showed that the use of CdS as a buffer–layer–based CdTe absorber layer for solar cell had the highest efficiency (%) of 17.43%. Furthermore, high conversion efficiencies of 17.42% and 16.27% were for the ZnSe and ZnO-based buffer layers, respectively. As a result, ZnO and ZnSe are potential candidates for replacing the CdS buffer layer in thin–film solar cells. Here, the absorber (CdTe) and buffer (ZnSe) layers were chosen to improve the efficiency by finding the optimal density of the carrier concentration (acceptor and donor). The simulation findings above provide helpful recommendations for fabricating high–efficiency metal oxide–based solar cells in the lab.

Flexible CZTSSe solar cells have attracted much attention due to their earth-abundant elements, high stability, and wide application prospects. However, the environmental problems caused by the high toxicity of the Cd in the buffer layers restrict the development of flexible CZTSSe solar cells. Herein, we develop a Cd-free flexible CZTSSe/ZnO solar cell. The influences of the ZnO films on device performances are investigated. The light absorption capacity of flexible CZTSSe solar cells is enhanced due to the removal of the CdS layer. The optimal thickness of the ZnO buffer layers and the appropriate annealing temperature of the CZTSSe/ZnO are 100 nm and 200 °C. Ultimately, the optimum flexible CZTSSe/ZnO device achieves an efficiency of 5.0%, which is the highest efficiency for flexible CZTSSe/ZnO solar cells. The systematic characterizations indicate that the flexible CZTSSe/ZnO solar cells based on the optimal conditions achieved quality heterojunction, low defect density and better charge transfer capability. This work provides a new strategy for the development of the environmentally friendly and low-cost flexible CZTSSe solar cells.

Light emission from the M-type enantiomer of a helicene derivative (2,13-bis(hydroxymethyl)[7]-thiaheterohelicene) adsorbed on the clean Au(111) and the C60-covered Au(111) surfaces were investigated by tunneling-current-induced light-emission technique. Plasmon-originated light emission was observed on the helicence/Au(111) surface and it was strongly suppressed on the area where the helicene molecules were adsorbed at the edges of the Au(111) terraces. To avoid luminescence quenching of excited helicene molecules and to suppress strong plasmon light emission from the Au(111) surface, C60 layers were used as decoupling buffer layers between helicene molecules and the Au(111) surface. Helicene molecules were adsorbed preferentially on the Au(111) surface rather than on the C60 buffer layers due to the small interaction of the molecules and C60 islands. This fact motivated us to deposit a multilayer of helicene molecules onto the C60 layers grown on the Au(111) surface, leading to the fact that the helicene/C60 multilayer showed strong luminescence with the molecules character. We consider that such strong light emission from the multilayer of helicene molecules has a plasmon origin strongly modulated by the molecular electronic states of (M)-[7]TH-diol molecules.

With the accelerated progress of urbanization, the application of high-voltage(HV) cables in HV transmission networks has become increasingly widespread. Analyzing, detecting, and evaluating the fiber characteristics of the buffer layer has become a hot topic in current research. In this study, a series of original microscopic images were obtained for multiple samples using image analysis methods. Basic image analysis techniques such as binarization, morphological closing, filtering, and edge extraction were employed to obtain continuous and complete images of the buffer layer fibers. The Hough transform was then utilized to determine the orientation distribution characteristics of polyester fibers. This study provides an effective approach for obtaining the fiber distribution characteristics of the buffer layer based on microscopic images, offering valuable references for future performance testing and quality supervision of buffer layers.

Perovskite solar cells (PSCs) characterized by high energy conversion efficiency (ECE) and low manufacturing costs, exhibit promising potential for commercialization in the near term. For commercialization, it is very important to prevent the decomposition of perovskite by ultraviolet (UV) radiation in the air environment. Also, the mesoscopic architecture of PSCs presents considerable opportunities for the solar cell industry, offering potential for recycling of spent photocatalytic materials such as TiO2, and exploration of new energy resources. To solve these problems, therefore, this study introduces a strategy to mitigate these challenges using a crystalline Al-doped TiO2 buffer layer as the electron transport layer (ETL) in conjunction with a mesoporous TiO2 layer in the fabrication of PSCs. Among various Al concentrations in the crystalline Al-doped TiO2 buffer layer fabricated via spin-coating, an optimum concentration of 7 mol% Al yielded the highest cell performance in the specific perovskite solar cell structure. These solar cells exhibited an impressive ECE of 11.87%, representing a substantial enhancement of nearly double the ECE (6.37%) achieved with the conventional ETL. This remarkable improvement can be attributed to the passivation effect of the newly developed ETL, which combines a crystalline Al-doped TiO2 buffer layer with a mesoporousTiO2 layer. Electrochemical impedance spectroscopy (EIS) analysis was performed in conjunction with theoretical calculations of charge transport parameters to substantiate this claim.

Flexible memory devices are promising for information storage and data processing applications in portable, wearable, and smart electronics operating under curved conditions. In this work, we realized high-performance flexible ferroelectric capacitors based on Hf 0.5 Zr 0.5 O 2 (HZO) thin film by depositing a buffer layer of Al 2 O 3 on polyimide (PI) substrates using atomic layer deposition (ALD). The flexible ferroelectric HZO films exhibit high remnant polarization ( P r ) of 21 µC/cm 2 . Furthermore, deterioration of polarization, retention, and endurance performance was not observed even at a bending radius of 2 mm after 5,000 bending cycles. This work marks a critical step in the development of high-performance flexible HfO 2 -based ferroelectric memories for next-generation wearable electronic devices.

We review the present state-of-the-art within back and front contacts in kesterite thin film solar cells, as well as the current challenges. At the back contact, molybdenum (Mo) is generally used, and thick Mo(S, Se)2 films of up to several hundred nanometers are seen in record devices, in particular for selenium-rich kesterite. The electrical properties of Mo(S, Se)2 can vary strongly depending on orientation and indiffusion of elements from the device stack, and there are indications that the back contact properties are less ideal in the sulfide as compared to the selenide case. However, the electronic interface structure of this contact is generally not well-studied and thus poorly understood, and more measurements are needed for a conclusive statement. Transparent back contacts is a relatively new topic attracting attention as crucial component in bifacial and multijunction solar cells. Front illuminated efficiencies of up to 6% have so far been achieved by adding interlayers that are not always fully transparent. For the front contact, a favorable energy level alignment at the kesterite/CdS interface can be confirmed for kesterite absorbers with an intermediate [S]/([S]+[Se]) composition. This agrees with the fact that kesterite absorbers of this composition reach highest efficiencies when CdS buffer layers are employed, while alternative buffer materials with larger band gap, such as Cd1−xZnxS or Zn1−xSnxOy, result in higher efficiencies than devices with CdS buffers when sulfur-rich kesterite absorbers are used. Etching of the kesterite absorber surface, and annealing in air or inert atmosphere before or after buffer layer deposition, has shown strong impact on device performance. Heterojunction annealing to promote interdiffusion was used for the highest performing sulfide kesterite device and air-annealing was reported important for selenium-rich record solar cells.

A novel AlGaN/GaN high-electron mobility transistor (HEMT) is put forward to promote its breakdown characteristics and anti-single-event transient (SET) effect. The features of the proposed device are a hybrid GaN/AlN buffer layer and a uniform-groove high- k passivation layer between the gate and drain electrodes (HGKB-HEMT). First, the uniform-groove high- k passivation layer not only reduces the peak electric field at the gate edges, but also modulates the electric field distribution between the gate and drain. Therefore, the breakdown voltage ( BV ) and the anti-SET effect show a great improvement. Second, the buffer leakage current was effectively reduced by the hybrid buffer layer, resulting in a further increase in the BV . The BV of the HGKB-HEMT reached 1672 V, which is 82.7% higher than the conventional GaN HEMT, and the peak drain current induced by the SET effect of the HGKB-HEMT decreased by 60.7% at V DS  = 50 V. Moreover, the channel current of the HGKB-HEMT increased slightly and the on-state resistance decreased.

In this research, binary ZnS–ZnO films were fabricated by a two-step process, offering an alternative buffer layer solution for photovoltaic solar cell applications. ZnS films were attained through thermal evaporation, after which they were annealed in air at separate temperatures resulting in films containing both ZnS and ZnO phases. Structural, electrical, ellipsometric, optical, and surface properties were examined in detail to elucidate their applicability as a buffer layer in photovoltaic applications. X-ray diffraction patterns revealed that the films exhibit cubic ZnS and hexagonal ZnO crystal structures, wherein crystallite size is augmented with higher annealing temperatures. ZnS films exhibited a needle-shaped surface morphology, as confirmed through atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) images. Annealing caused noteworthy modifications on the surfaces of the films. Additionally, absorption spectra denote two distinct absorption regions forming as a result of the annealing process, possibly indicating the emergence of ZnS and ZnO phases. Photoluminescence analyses demonstrate that binary ZnS–ZnO films exhibit greater emission intensities than single-phase ZnS films. Additionally, the annealing process caused the electrical resistivity of films to reduce from 1.28 × 10 5 to 3.84 × 10 1 Ω cm. These results suggest that binary ZnS–ZnO films produced via annealing can be considered as promising buffer layers in potential photovoltaic solar cell applications.