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The evolution of the contact scheme has driven the technology revolution of crystalline silicon (c‐Si) solar cells. The state‐of‐the‐art high‐efficiency c‐Si solar cells such as silicon heterojunction (SHJ) and tunnel oxide passivated contact (TOPCon) solar cells are featured with passivating contacts based on doped Si thin films, which induce parasitic optical absorption loss and require capital‐intensive deposition processes involving flammable and toxic gasses. A promising solution to tackle this problem is to employ dopant‐free passivating contact, involving the use of transparent and cost‐effective wide band gap materials. In this review, we first introduce the dopant‐free passivating contact, from carrier transport mechanisms, material classification to evaluation methods. Then we focus on the advances in different strategies to improve cell performance, including material property optimization, structural and interfacial engineering, as well as various post‐treatments. At the end, the challenge and perspective of dopant‐free passivating contact c‐Si solar cells are discussed. This article provides an overview of the mechanism and materials of dopant‐free passivating contacts for crystalline silicon solar cells, and focuses on the recent advances in contact configuration and interface engineering for efficiency and stability enhancement.

[Eu([sup.3]DPIQC)[sub.3]] (where DPIQC = 3-(diphenyl phosphoryl)-1-isoquinolinecarboxylate), a luminescent europium complex with antenna ligands, has been carefully embedded within a polyvinyl butyral (PVB) matrix and the resulting material was used to prepare films used as luminescent down-shifting layers (LDSLs) for crystalline Si-based solar cells. The films were characterized using photoluminescence spectroscopy, atomic force spectroscopy (AFM), UV-Vis spectroscopy, and fluorescence microscopy. The AFM analysis shows films with low surface roughness, while fluorescence microscopy revealed that the Eu complex embedded in PVB assumed a spheroidal configuration, a morphology especially beneficial for optical applications. The so-obtained LDSLs were utilized as energy converters in c-Si solar cells to enhance the utilization of high-energy photons, thereby improving their overall efficiency. The determination of photovoltaic parameters carried out before and after the deposition of the LDSLs on the c-Si cells confirms a positive effect on the efficiency of the cell. The Jsc increases from 121.6 mA/cm[sup.2] to 124.9 mA/cm[sup.2], and the open circuit voltage (Voc) is found to be unrelated to the complex concentration in the films. The fill factor (FF) remains constant with the Eu concentration. The EQE curves indicate an enhancement in the performance of the photovoltaic cells within the UV region of the spectrum for all coated devices. Electrochemical impedance spectroscopy (EIS) was also carried out in order to analyze the effect of the Eu complex in the charge transfer process of the devices.

[Eu(3DPIQC)3] (where DPIQC = 3-(diphenyl phosphoryl)-1-isoquinolinecarboxylate), a luminescent europium complex with antenna ligands, has been carefully embedded within a polyvinyl butyral (PVB) matrix and the resulting material was used to prepare films used as luminescent down-shifting layers (LDSLs) for crystalline Si-based solar cells. The films were characterized using photoluminescence spectroscopy, atomic force spectroscopy (AFM), UV-Vis spectroscopy, and fluorescence microscopy. The AFM analysis shows films with low surface roughness, while fluorescence microscopy revealed that the Eu complex embedded in PVB assumed a spheroidal configuration, a morphology especially beneficial for optical applications. The so-obtained LDSLs were utilized as energy converters in c-Si solar cells to enhance the utilization of high-energy photons, thereby improving their overall efficiency. The determination of photovoltaic parameters carried out before and after the deposition of the LDSLs on the c-Si cells confirms a positive effect on the efficiency of the cell. The Jsc increases from 121.6 mA/cm2 to 124.9 mA/cm2, and the open circuit voltage (Voc) is found to be unrelated to the complex concentration in the films. The fill factor (FF) remains constant with the Eu concentration. The EQE curves indicate an enhancement in the performance of the photovoltaic cells within the UV region of the spectrum for all coated devices. Electrochemical impedance spectroscopy (EIS) was also carried out in order to analyze the effect of the Eu complex in the charge transfer process of the devices.

The silicon wafers for solar cells on which the paste is deposited experience a bowing phenomenon. The thickness of commonly used c-Si wafers is 180 μm or more. When fabricating c-Si solar cells with this wafer thickness, the bowing value is 3 mm or less and the problem does not occur. However, for the thin c-Si solar cells which are being studied recently, the output reduction due to failure during manufacture and cracking are attributed to bowing. In generally, it is known that the bowing phenomenon arises mainly from the paste applied to the back side electrode of c-Si solar cells and the effects of SiNx (silicon nitride) and the paste on the front side are not considered significant. The bowing phenomenon is caused by a difference in the coefficient of expansion between heterogeneous materials, there is the effect of bowing on the front electrode and ARC. In this paper, a partially processed c-Si solar cell was fabricated and a bowing phenomenon variation according to the wafer thicknesses was confirmed. As a result of the experiment, the measured bow value after the firing process suggests that the paste on the front-side indicates a direction different from that of the back-side paste. The bow value increases when Al paste is deposited on SiNx. The fabricated c-Si solar cell was analyzed on basis of the correlation between the bowing phenomenon of the materials and the c-Si wafer using Stoney’s equation, which is capable of analyzing the relationship between bowing and stress. As a result, the bowing phenomenon of the c-Si solar cell estimated through the experiment that the back side electrode is the important element, but also the front electrode and ARC influence the bowing phenomenon when fabricating c-Si solar cells using thin c-Si wafers.

To realize the high-efficiency solar cell, surface texturing method is one of the well-liked and potential way for the last few decades. Though different research groups have adopted several types of nanostructured anti-reflective geometries for front surface texturing of solar cell but till today which type of dimension will be fruitful to get maximum efficiency of the cell is yet to be exposed. In this work, we are trying to give a comparative study of different types of nanostructure geometries like circle, ellipse, trapezoidal and triangle (or cone) made by same material silicon and try to investigate their potential to give minimum reflectance for better cultivation of electron–hole pair into the junction of the cell. Through this study, it was validated that the triangle or cone structures have the competence to satisfy maximum criteria like low reflectance, Omni-directionality with better harvesting of electron–hole pair into the junction of the solar cell without compromising its material and processing cost. Further these types of structures (cone or triangle) have the potentiality to enhance the efficiency (more than 27% compared to other structures) of solar cell with noticeable increment of short-circuit current of the device. Finally, we fabricated the optimized nanotriangle (or nanocone) geometry through nanosphere lithography technique to realize the structure in real world and found the same optical occurrence which was already explored in our simulation studies.

In order to analyze the effects of various sizes of pyramid structure on solar cell characteristics, a pyramid structure was formed on the wafer through various etching processes. In this paper, etching was performed using one-step etching processes such as alkaline solution etching, reactive ion etching (RIE), and metal-assisted chemical etching (MACE), and two-step etching processes such as alkaline solution + MACE and alkaline solution + RIE. The micro-sized pyramid-structured wafers formed using the alkali solution showed higher reflectivity than nano-sized pyramid-structured wafers. Accordingly, it was expected that the characteristics of the cells fabricated with a nano-sized pyramid-structured wafer having low reflectivity would be higher than that of a micro-sized pyramid-structured wafer. However, it was confirmed that the quantum efficiency characteristics in the short wavelength region were higher in the micro-sized pyramid-structured wafers than in the nano-sized pyramid-structured wafers. To confirm the reason for this, surface characteristics were analyzed through the deposition of an emitter layer on a wafer formed in a pyramidal structure. As a result, in the case of the nano-sized pyramid-structured wafer, the sheet resistance characteristics were lower due to the increased depth of the emitter layer in comparison to the micro-sized pyramid-structured wafer. Accordingly, it was determined that the quantum efficiency was degraded as a result of the high recombination rate.

Current mismatch due to solar cell failure or partial shading of solar panels may cause a reverse biasing of solar cells inside a photovoltaic (PV) module. The reverse-biased cells consume power instead of generating it, resulting in hot spots. To protect the solar cell against the reverse current, we introduce a novel design of a self-protected thin-film crystalline silicon (c-Si) solar cell using TCAD simulation. The proposed device achieves two distinct functions where it acts as a regular solar cell at forward bias while it performs as a backward diode upon reverse biasing. The ON-state voltage (VON) of the backward equivalent diode is found to be 0.062 V, which is lower than the value for the Schottky diode usually used as a protective element in a string of solar cells. Furthermore, enhancement techniques to improve the electrical and optical characteristics of the self-protected device are investigated. The proposed solar cell is enhanced by optimizing different design parameters, such as the doping concentration and the layers’ thicknesses. The enhanced cell structure shows an improvement in the short-circuit current density (JSC) and the open-circuit voltage (VOC), and thus an increased power conversion efficiency (PCE) while the VON is increased due to an increase of the JSC. Moreover, the simulation results depict that, by the introduction of an antireflection coating (ARC) layer, the external quantum efficiency (EQE) is enhanced and the PCE is boosted to 22.43%. Although the inclusion of ARC results in increasing VON, it is still lower than the value of VON for the Schottky diode encountered in current protection technology.

A thin silicon oxide (SiOx) layer (thickness: 1.5–2.0 nm) formed at an Al2O3/Si interface can enhance the interface properties. However, it is challenging to control the characteristics of thin SiOx layers because SiOx forms naturally during Al2O3 deposition on Si substrates. In this study, a ~1.5 nm-thick SiOx layer was inserted between Al2O3 and Si substrates by wet chemical oxidation to improve the passivation properties. The acidic solutions used for wet chemical oxidation were HCl:H2O2:H2O, H2SO4:H2O2:H2O, and HNO3. The thicknesses of SiOx layers formed in the acidic solutions were ~1.48, ~1.32, and ~1.50 nm for SiOx-HCl, SiOx-H2SO4, and SiOx-HNO3, respectively. The leakage current characteristics of SiOx-HNO3 were better than those of the oxide layers formed in the other acidic solutions. After depositing a ~10 nm-thick Al2O3 on an SiOx-acidic/Si structure, we measured the effective carrier lifetime using quasi steady-state photoconductance and examined the interfacial properties of Al2O3/SiOx-acidic/Si using surface carrier lifetime simulation and capacitance–voltage measurement. The effective carrier lifetime of Al2O3/SiOx-HNO3/Si was relatively high (~400 μs), resulting from the low surface defect density (2.35–2.88 × 1010 cm−2eV−1). The oxide layer inserted between Al2O3 and Si substrates by wet chemical oxidation helped improve the Al2O3/Si interface properties.

Doped hydrogenated nanocrystalline (nc-Si:H) and silicon oxide (nc-SiOx:H) materials grown by plasma-enhanced chemical vapor deposition have favourable optoelectronic properties originated from their two-phase structure. This unique combination of qualities, initially, led to the development of thin-film Si solar cells allowing the fabrication of multijunction devices by tailoring the material bandgap. Furthermore, nanocrystalline silicon films can offer a better carrier transport and field-effect passivation than amorphous Si layers could do, and this can improve the carrier selectivity in silicon heterojunction (SHJ) solar cells. The reduced parasitic absorption, due to the lower absorption coefficient of nc-SiOx:H films in the relevant spectral range, leads to potential gain in short circuit current. In this work, we report on development and applications of hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) from material to device level. We address the potential benefits and the challenges for a successful integration in SHJ solar cells. Finally, we prove that nc-SiOx:H demonstrated clear advantages for maximizing the infrared response of c-Si bottom cells in combination with perovskite top cells.

Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.