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Micro/nano patterns based on quantum dots (QDs) are of great interest for applications ranging from electronics to photonics to sensing devices for biomedical purposes. Several patterning methods have been developed, but all lack the precision and reproducibility required to fabricate precise, complex patterns of less than one micrometer in size, or require specialized crosslinking ligands, limiting their application. In this study, we present a novel approach to directly pattern QD nanopatterns by electron beam lithography using commercially available colloidal QDs without additional modifications. We have successfully generated reliable dot and line QD patterns with dimensions as small as 140 nm. In addition, we have shown that using a 10 nm SiO2 spacer layer on a 50 nm Au layer substrate can double the fluorescence intensity compared to QDs on the Au layer without SiO2. This method takes advantage of traditional nanolithography without the need for a resist layer.

InP@ZnS core-shell colloidal quantum dots (CQDs) were synthesized and characterized using the z-scan technique. The nonlinear refraction and nonlinear absorption coefficients (γ = −2 × 10−12 cm2 W−1, β = 4 × 10−8 cm W−1) of these CQDs were determined using 10 ns, 532 nm pulses. The saturable absorption (β = −1.4 × 10−9 cm W−1, Isat = 3.7 × 108 W cm−2) in the 3.5 nm CQDs dominated at small intensities of the probe pulses (I ≤ 7 × 107 W cm−2) followed by reverse saturable absorption at higher laser intensities. We report the optical limiting studies using these CQDs showing the suppression of propagated nanosecond radiation in the intensity range of 8 × 107–2 × 109 W cm−2. The role of nonlinear scattering is considered using off-axis z-scan scheme, which demonstrated the insignificant role of this process along the whole range of used intensities of 532 nm pulses. We discuss the thermal nature of the negative nonlinear refraction in the studied species.

Colloidal semiconductor quantum dots are attractive materials for the realization of solution-processable lasers. However, their applications as optical-gain media are complicated by a non-unity degeneracy of band-edge states, because of which multiexcitons are required to achieve the lasing regime. This increases the lasing thresholds and leads to very short optical gain lifetimes limited by nonradiative Auger recombination. Here, we show that these problems can be at least partially resolved by employing not neutral but negatively charged quantum dots. By applying photodoping to specially engineered quantum dots with impeded Auger decay, we demonstrate a considerable reduction of the optical gain threshold due to suppression of ground-state absorption by pre-existing carriers. Moreover, by injecting approximately one electron per dot on average, we achieve a more than twofold reduction in the amplified spontaneous emission threshold, bringing it to the sub-single-exciton level. These measurements indicate the feasibility of ‘zero-threshold’ gain achievable by completely blocking the band-edge state with two electrons. Blocking band-edge absorption of compositionally graded quantum dots with suppressed Auger recombination by pre-existing electrons allows for demonstrating near-zero-threshold optical gain and amplified spontaneous emission at sub-single-exciton pump levels.

A study is presented on improving the absorption of the PbS colloidal quantum dot (CQD) films using plasmonic scattering. Unlike previous methods that include high temperature annealing, an integrated circuits (IC) compatible method of introducing colloidal gold nanoparticles to PbS film during the spin deposition process is developed. The devices are composed of eight layers of PbS and gold nanoparticles are spin cast after the fourth layer that places them in the middle, sandwiched between PbS films in order to avoid electrical shorts between the fingers. Two different solutions of gold nanoparticles in citrate, 0.1% and 0.01%, are used to fabricate two different devices. Introducing 0.01% Au nanoparticles in PbS film increases the responsivity 2.6-fold, whereas introducing 0.1% Au nanoparticles results in a 6.5-fold increase in responsivity.

At the current stage of long-wavelength infrared (LWIR) detector technology development, the only commercially available detectors that operate at room temperature are thermal detectors. However, the efficiency of thermal detectors is modest: they exhibit a slow response time and are not very useful for multispectral detection. On the other hand, in order to reach better performance (higher detectivity, better response speed, and multispectral response), infrared (IR) photon detectors are used, requiring cryogenic cooling. This is a major obstacle to the wider use of IR technology. For this reason, significant efforts have been taken to increase the operating temperature, such as size, weight and power consumption (SWaP) reductions, resulting in lower IR system costs. Currently, efforts are aimed at developing photon-based infrared detectors, with performance being limited by background radiation noise. These requirements are formalized in the Law 19 standard for P-i-N HgCdTe photodiodes. In addition to typical semiconductor materials such as HgCdTe and type-II AIIIBV superlattices, new generations of materials (two-dimensional (2D) materials and colloidal quantum dots (CQDs)) distinguished by the physical properties required for infrared detection are being considered for future high-operating-temperature (HOT) IR devices. Based on the dark current density, responsivity and detectivity considerations, an attempt is made to determine the development of a next-gen IR photodetector in the near future.

Colloidal quantum dots (QDs) are semiconductor crystals a few nanometers in size. Due to their vibrant colors and unique photoluminescence (PL), QDs are widely utilized in displays, where barrier films provide essential shielding. However, one of the primary challenges of QD applications remains achieving sufficient robustness while keeping costs low. Over the past two decades, significant progress has been made in the encapsulation of QDs within silica matrices, aiming to preserve their original PL properties. Research efforts have evolved from bulk forms to thin films. Silica nanoparticles containing multiple embedded QDs have emerged as particularly promising candidates for practical applications. This review highlights recent advancements in silica-based QD encapsulation, incorporating findings from both the authors’ investigations and those of other research groups within the field. Silica glass possesses inherent shielding capabilities, but silane coupling agents such as (3-aminopropyl)trimethoxysilane and (3-mercaptopropyl)trimethoxysilane tend to negatively impact this functionality when they are used alone, partly because of the limited formation of a well-developed glass network structure. However, when judiciously controlled, they can serve as mediators between the QD surface and the surrounding pure silica glass matrix, helping to preserve PL properties and control the morphology of silica particles. This review discusses the potential for achieving exceptional shielding properties through sol–gel glass fabrication at low temperatures, utilizing both tetraethoxysilane and other silane coupling agents.

The mainstream commercialization of colloidal quantum dots (QDs) for light-emitting applications has begun: Sony televisions emitting QD-enhanced colors are now on sale. The bright and uniquely size-tunable colors of solution-processable semiconducting QDs highlight the potential of electroluminescent QD light-emitting devices (QLEDs) for use in energy-efficient, high-color-quality thin-film display and solid-state lighting applications. Indeed, this year’s report of record-efficiency electrically driven QLEDs rivaling the most efficient molecular organic LEDs, together with the emergence of full-color QLED displays, foreshadow QD technologies that will transcend the optically excited QD-enhanced products already available. In this article, we discuss the key advantages of using QDs as luminophores in LEDs and outline the 19-year evolution of four types of QLEDs that have seen efficiencies rise from less than 0.01% to 18%. With an emphasis on the latest advances, we identify the key scientific and technological challenges facing the commercialization of QLEDs. A quantitative analysis, based on published small-scale synthetic procedures, allows us to estimate the material costs of QDs typical in light-emitting applications when produced in large quantities and to assess their commercial viability.

The cryogenic cooling of infrared (IR) photon detectors optimized for the mid- (MWIR, 3–5 µm) and long wavelength (LWIR, 8–14 µm) range is required to reach high performance. This is a major obstacle for more extensive use of IR technology. Focal plane arrays (FPAs) based on thermal detectors are presently used in staring thermal imagers operating at room temperature. However, their performance is modest; thermal detectors exhibit slow response, and the multispectral detection is difficult to reach. Initial efforts to develop high operating temperature (HOT) photodetectors were focused on HgCdTe photoconductors and photoelectromagnetic detectors. The technological efforts have been lately directed on advanced heterojunction photovoltaic HgCdTe detectors. This paper presents the several approaches to increase the photon-detectors room-temperature performance. Various kinds of materials are considered: HgCdTe, type-II AIIIBV superlattices, two-dimensional materials and colloidal quantum dots.

Colloidal quantum dot (QD), a solution‐processable nanoscale optoelectronic building block with well‐controlled light absorption and emission properties, has emerged as a promising material system capable of interacting with various photonic structures. Integrated QD/photonic structures have been successfully realized in many optical and optoelectronic devices, enabling enhanced performance and/or new functionalities. In this review, the recent advances in this research area are summarized. In particular, the use of four typical photonic structures, namely, diffraction gratings, resonance cavities, plasmonic structures, and photonic crystals, in modulating the light absorption (e.g., for solar cells and photodetectors) or light emission (e.g., for color converters, lasers, and light emitting diodes) properties of QD‐based devices is discussed. A brief overview of QD‐based passive devices for on‐chip photonic circuit integration is also presented to provide a holistic view on future opportunities for QD/photonic structure‐integrated optoelectronic systems. The recent advances of the integrated quantum dot (QD)/photonic structures in many optoelectronic and optical devices for performance enhancement and new functionalities are summarized in this review. The use of four typical photonic structures applied in either modulating the light absorption or light emission properties of QD‐based devices is discussed, and the innovative QD‐based on‐chip photonic circuit is briefly overviewed.

Photodetectors convert photons into current or voltage outputs and are thus widely used for spectroscopy, imaging and sensing. Traditional photodetectors generally show a consistent-polarity response to incident photons within their broadband responsive spectrum. Here we introduced a new type of photodetector employing SnS 2 nanosheets sensitized with PbS colloidal quantum dots (CQDs) that are not only sensitive (~10 5  A W −1 ) and broadband (300–1000 nm) but also spectrally distinctive, that is, show distinctive (positive or negative) photoresponse toward incident photons of different wavelengths. A careful mechanism study revealed illumination-modulated Schottky contacts between SnS 2 nanosheets and Au electrodes, altering the photoresponse polarity toward incident photons of different wavelengths. Finally, we applied our SnS 2 nanosheet/PbS CQDs hybrid photodetector to differentiate the color temperature of emission from a series of white light-emitting diodes (LEDs), showcasing the unique application of our novel photodetectors. Photodetectors: colour discrimination A photodetector that can distinguish low- and high-energy photons is useful for analyzing the color temperature of solid-state lighting. The detector, developed by Liang Gao and co-workers from Huazhong University of Science and Technology in China, is based on a nanosheet of tin disulphide (SnS 2 ) that has been sensitized with lead sulfide (PbS) colloidal quantum dots. The detector is not only highly sensitive (responsivity of about 10 5  A W −1 ) and broadband in operation (wavelength coverage of 300–1000 nm), but it can also discriminate between light of different wavelengths. The device shows a negative photoresponse for low-energy (long-wavelength) photons and a positive photoresponse for high-energy (short-wavelength) photons. The team showed that this ability to distinguish between low- and high-energy photons enables the photodetector to differentiate between white light-emitting diodes (LEDs) with different colour temperatures.