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This study reports the experimental demonstration of the first waveguide-integrated SiGe modulator using a PIN diode operating in a wide spectral range of the mid-infrared region. At the wavelength of 10 µm, an extinction ratio up to 10 dB is obtained in injection regime and 3.2 dB in depletion regime. High speed operation is obtained, up to 1.5 GHz. Furthermore, the device can also operate as an integrated photodetector. Photodetection has thus been characterized from 5.2 µm to 10 µm wavelengths showing an internal responsivity around 1 mA/W, and a 3 dB electro-optical bandwidth of 32 MHz. These results show a significant advancement in integrated photodetectors and electro-optical modulators for mid-infrared spectroscopy.

Integrated miniature spectrometers have impacts in industry, agriculture, and aerospace applications due to their unique advantages in portability and energy consumption. Although existing on-chip spectrometers have achieved breakthroughs in key performance metrics, such as, a high resolution and a large bandwidth, their scanning speed and energy consumption still hinder practical applications of such devices. Here, a stationary Fourier transform spectrometer is introduced based on a Mach–Zehnder interferometer structure on thin-film lithium niobate. Long and low-loss spiral waveguides with electro-optic tuning are adopted as the optical path scanning elements with a half-wave voltage of 0.14 V. A high resolution of 2.1 nm and a spectral recovery with a bandwidth of 100 nm is demonstrated under a high-speed and high-voltage scanning in the range of −100 V to +100 V at up to 100 KHz. A low energy consumption in the μJ scale per scan is also achieved.

Optical modulators were, are, and will continue to be the underpinning devices for optical transceivers at all levels of the optical networks. Recently, heterogeneously integrated silicon and lithium niobate (Si/LN) optical modulators have demonstrated attractive overall performance in terms of optical loss, drive voltage, and modulation bandwidth. However, due to the moderate Pockels coefficient of lithium niobate, the device length of the Si/LN modulator is still relatively long for low-drive-voltage operation. Here, we report a folded Si/LN Mach–Zehnder modulator consisting of meandering optical waveguides and meandering microwave transmission lines, whose device length is approximately two-fifths of the unfolded counterpart while maintaining the overall performance. The present devices feature a low half-wave voltage of 1.24 V, support data rates up to 128 gigabits per second, and show a device length of less than 9 mm.

Modulating characteristics of transmissive and reflective Fabry–Perot type multi-nanolayer conductor–dielectric electro-optical modulators (EOMs) for chip-to-chip free space optical interconnection are analyzed via wavelength-scale electromagnetic modelling. For electromagnetic analysis the frequency-domain method of single expression is used. The considered EOM structures consist of an electro-optical spacer of LiNbO 3 covered by two thin ITO conducting nano-layers, surrounded by Si/SiO 2 distributed Bragg reflectors (DBRs). In the case of transmissive EOM the DBRs are symmetric regarding the spacer, while in the case of reflective EOM they are asymmetric to provide high reflectance for the structure. From four possible types of DBRs the suitable structure has been chosen with layers of higher permittivity adjoining to the ITO nano-layers. ITO nano-layers serving as electric contacts for supplying modulating electrical signal to the electro-optical spacer are parts of the multi-nanolayer structures and are included in the electromagnetic models. An incident radiation from an external laser diode at 1.55 μm wavelength is considered. The optimal configurations of the EOM structures providing a high peak in the transmittance for the transmissive EOM and a narrow dip in the reflectance for the reflective EOM are proposed. Efficiency of optical wave intensity modulation is analyzed by means of influence of electro-optical spacer’s permittivity change on the transmittance and the reflectance of the EOM structures.

With the increasing demand for capacity in communications networks, the use of integrated photonics to transmit, process and manipulate digital and analog signals has been extensively explored. Silicon photonics, exploiting the complementary-metal-oxide-semiconductor (CMOS)-compatible fabrication technology to realize low-cost, robust, compact, and power-efficient integrated photonic circuits, is regarded as one of the most promising candidates for next-generation chip-scale information and communication technology (ICT). However, the electro-optic modulators, a key component of Silicon photonics, face challenges in addressing the complex requirements and limitations of various applications under state-of-the-art technologies. In recent years, the graphene EO modulators, promising small footprints, high temperature stability, cost-effective, scalable integration and a high speed, have attracted enormous interest regarding their hybrid integration with SiPh on silicon-on-insulator (SOI) chips. In this paper, we summarize the developments in the study of silicon-based graphene EO modulators, which covers the basic principle of a graphene EO modulator, the performance of graphene electro-absorption (EA) and electro-refractive (ER) modulators, as well as the recent advances in optical communications and microwave photonics (MWP). Finally, we discuss the emerging challenges and potential applications for the future practical use of silicon-based graphene EO modulators.

In this paper, a novel silicon-on-chip integrated 4 × 1 wavelength division multiplexing (WDM) multiplexer has been developed. This is the first time that the multiplexer design incorporates arrayed electro-optical modulators with crosstalk cancellation. The design utilizes two types of electro-optic modulators in each channel. The first modulator, based on 1D-PhCNBC, extracts the desired wavelengths from the WDM spectrum. The second modulator, based on coupled hybrid plasmonics, acts as a switch to eliminate crosstalk of the desired optic wavelength signal at the multiplexer output. By combining the advantages of electro-optical modulators and crosstalk cancellation techniques, we anticipate that our proposed design contributes to the advancement of WDM multiplexing technology and facilitates the implementation of efficient and compact optical communication systems. Additionally, this synergy enables enhanced performance, reduced signal interference, and improved signal quality, leading to more reliable and high-speed data transmission in optical networks. The functionality of the device is theoretically simulated using 3D-FDTD (Finite-Difference Time-Domain) method.

We report on a novel effect of temperature-dependent modulation in graphene-supported metamaterials. The effect was observed during the theoretical analysis of a model graphene-supported electro-optical modulator having silicon dioxide (SiO 2 ) or hafnium dioxide (HfO 2 ) as a buffer dielectric layer. Comparative analysis of the two materials showed that they provide approximately the same maximum values for transmission and reflection modulation depths. However, in the case of a HfO 2 buffer layer, a lower chemical potential of the graphene is required to achieve the maximum value. Moreover, theoretical calculations revealed that a lower gate voltage (up to 6.4 times) is required to be applied in the case of a HfO 2 layer to achieve the same graphene chemical potential. The graphene layer was found to possesses high absorption (due to the additional resonance excitation) for some values of chemical potential and this effect is extremely temperature dependent. The discovered modulation effect was demonstrated to further increase the transmission modulation depth for the simple model structure up to 2.7 times (from 18.4% to 50.1%), while for the reflection modulation depth, this enhancement was equal to 2.2 times (from 24.4% to 52.8%). The novel modulation effect could easily be adopted and applied over a wide range of metadevices which would serve as a quick booster for the development of related research areas.

A nanophotonic modulator is proposed based on Silicon-ITO (Indium Tin Oxide) heterojunction and slot waveguide with 2D-graphene sheets. It combines the advantage of 2D materials, heterojunctions, and slot waveguides. A 1550-nm light is guided and confined in a nano slot of p-silicon rib, which is filled with semimetal n-ITO. The graphene sheet is used for modulation due to its unique properties, such as absorption turned off due to state filling or Pauli-blocking, to minimize the insertion loss to 0.07 dB/µm with the tuning of Fermi levels in an extensive range of wavelengths at different voltages. The device has shown dual characteristics at different sets of voltages. It works as an absorptive modulator (amplitude modulator) between 0 and 2 V and as an electro-optic modulator from 2 to 5 V. An outstanding π shift at only 32 µm for a voltage of 3 V and a very high extinction ratio of 25 dB for 20 µm of the waveguide is observed. The electrical characteristic of the device shows low power consumption active device length product of V π L = 64 Vµm. A study of TE polarization of light using graphene sheets is also presented in this paper. The device has applications for phase and amplitude modulations in silicon on-chip communication and interconnects.

This study developed a bipolar optical code division multiple access (Bi-OCDMA) technique based on spectral amplitude coding for the formation and transmission of optical-polarized and coded signals over wireless optical channels. Compared with conventional Bi-OCDMA schemes, the proposed free-space optics communication system that uses a dual electro-optical modulator design improves the transmission rate. In theory, multiple access interference can be removed by using correlation subtraction schemes. The experiment results revealed that the proposed system can be employed to accurately extract codewords from an M-sequence and subsequently reconstruct the desired original data. Moreover, the proposed architecture can be implemented easily in simple and cost-effective designs and may be beneficial for broadening the use of Bi-OCDMA schemes in wireless optical communications.

The refractive index change obtained after annealed proton exchange (APE) in lithium niobate (LiNbO3) crystals depends on both the proton exchange process carried out in hot acid and the structure of the crystals. In devices produced by the APE method, dislocations and lattice defects within the crystal structure are considered to be primary contributors to refractive index discontinuities and waveguide instability. In this study, the effects of pre-annealing LiNbO3 crystals at 500 °C on multifunctional integrated optical chips (MIOCs) were investigated through interferometric fiber-optic gyroscope (IFOG) system-level tests. It was observed that the pre-annealing process resulted in an improvement in the optical throughput of MIOCs (from %34 to %51) and the temperature-dependent bias drift stability of the IFOG (from 0.031–0.038°/h to 0.012–0.019°/h). The angle random walk (ARW) was measured as 0.0056 deg/√h.