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A method for reducing power losses in the diodes of the output push-pull high-frequency rectifier of a switching DC power converter during their parallel operation is proposed. The use of the proposed method in a switching DC power converter based on high-frequency magnetic amplifiers is reasoned theoretically and investigated experimentally. The results of experimental research and the examples of the proposed method implementation for the output high-frequency rectifier in semiconductor power converters for a wide variety of applications are presented. In particular, the uniform distribution of current between the diodes switched on for parallel operation is proven, and it is shown that when using the proposed method at the 30 A output current and 50 kHz operating frequency, the diode overlap time in the push-pull circuit at the beginning of each half-cycle has decreased by several times (from 4μs to 1μs). References 21, figures 6.

A new configuration of rectifier suiting CMOS technology is presented. The rectifier consists of only two n-channel MOS transistors, two capacitors and two resistors; for this reason it is very favourable in manufacturing in CMOS technology. With these features the rectifier is easy to design and cheap in production. Despite its simplicity, the rectifier has relatively good characteristics, the voltage and power efficiency, and bandwidth greater than 89%, 87%, and 1 GHz, respectively. The performed simulations and measurements of a prototype circuit fully confirmed its correct operation and advantages.

Rectifier circuits are commonly found in all types of electronic systems. The function of a rectifier circuit is to convert an ac voltage into a dc voltage as part of a power supply. Traditionally, the ac voltage is usually a single-phase or polyphase voltage at mains’ frequency. However in some modern applications, e.g., switching regulators, the ac voltage can also be a nonsinusoidal waveform at a frequency of more than 100kHz.

Rectifiers are generally categorized as passive and active rectifiers. Compared to the active rectifiers (e.g. pulse width modulated (PWM) rectifiers), passive rectifiers (i.e., diode rectifiers) result in higher total harmonic distortion (THD) in the input current. However, passive rectifiers are simpler than the active rectifiers in their hardware and control structure. Therefore, passive rectifiers are still considered with different THD minimization schemes. In industry, three-phase diode rectifiers are used in 6-pulse, 12-pulse, 18-pulse, and 24-pulse configurations with THD values of 30%, 15%, 10%, and 6%, respectively. Single-phase diode rectifiers result in a higher THD of 48%. Minimization of THD for single-phase rectifiers is a conspicuous need for increasing DC appliances for domestic use. This paper proposes a novel rectifier using a conventional diode bridge followed by a series chopper. A controlled conduction angle of the chopper significantly reduces the THD from 48 to 28%. The THD is further reduced to 16.4% on the primary side of the distribution transformer after the elimination of triple-n harmonics in a balanced configuration. The proposed topology uses a single switch operating at the line frequency making the circuit and control much simpler than a PWM rectifier, and the dynamic power loss is also low. So, the proposed topology is better suited for single-phase applications requiring circuit and control simpler than a PWM rectifier, and THD much lower than a conventional diode bridge rectifier. A comprehensive analytical analysis, circuit simulations, power loss analysis, and experimental results are presented for the proposed topology to validate its working and evaluate its performance.

Under the background of “dual-carbon” strategy and global energy transition, the metallurgical industry, which accounts for 15–20% of industrial energy consumption, urgently needs to reduce the energy consumption and emission of DC power supply of electric furnaces. Aiming at the existing 400–800 V/≥3000 A industrial-frequency transformer-rectifier system with low efficiency, large volume, heat dissipation difficulties and other bottlenecks, this thesis proposes and realizes a high-frequency integrated DC power supply scheme for high-power electric furnaces: high-frequency transformer core and rectifier circuit are deeply integrated, which breaks through and reduces the volume of the system by more than 40%, and significantly reduces the iron consumption; multiple cores and three windings in parallel are used for the system. The topology of multiple cores and three windings in parallel enables several independent secondary stages to share the large current of 3000 A level uniformly, eliminating the local overheating and current imbalance; the combination of high-frequency rectification and phase-shift control strategy enhances the input power factor to more than 0.95 and cuts down the grid-side harmonics remarkably. The authors have completed the design of 100 kW prototype, magneto-electric joint simulation, thermal structure coupling analysis, control algorithm development and field comparison test, and the results show that the program compared with the traditional industrial-frequency system efficiency increased by 12–15%, the system temperature rise reduced by 20 K, electrode voltage increased by 10–15%, the input power of furnace increased by 12%, and the harmonic index meets the requirements of the traditional industrial-frequency system. The results show that the efficiency of this scheme is 12–15% higher than the traditional IF system, the temperature rise in the system is 20 K lower, the voltage at the electrode end is 10–15% higher, the input power of the furnace is increased by 12%, and the harmonic indexes meet the requirements of GB/T 14549, which verifies the value of the scheme for realizing high efficiency, miniaturization, and reliable DC power supply in metallurgy.

Considerable efforts have been made to realize nanoscale diodes based on single molecules or molecular ensembles for implementing the concept of molecular electronics. However, so far, functional molecular diodes have only been demonstrated in the very low alternating current frequency regime, which is partially due to their extremely low conductance and the poor degree of device integration. Here, we report about fully integrated rectifiers with microtubular soft-contacts, which are based on a molecularly thin organic heterojunction and are able to convert alternating current with a frequency of up to 10 MHz. The unidirectional current behavior of our devices originates mainly from the intrinsically different surfaces of the bottom planar and top microtubular Au electrodes while the excellent high frequency response benefits from the charge accumulation in the phthalocyanine molecular heterojunction, which not only improves the charge injection but also increases the carrier density. The demand for miniaturization of electronics has been motivating a growing interest in high-performance molecular electronics. Li, Bandari et al. report a fully integrated molecular rectifier based on a molecular heterojunction and microtubular electrode enabling high frequency operation at more than 10 MHz.

Plasma power supplies find extensive applications across industrial, energy, environmental, and medical domains. This study addresses limitations of conventional plasma power supplies, including high harmonic current content, neutral-point potential imbalance, and manufacturing complexity. A novel design approach for high-frequency, high-voltage plasma power supplies is proposed, based on three-level sinusoidal pulse width modulation (SPWM) technology. First, the design distinctions between the input-side Boost power factor correction circuit and Diode Rectifier circuits are analyzed. Subsequently, an integrated SPWM driver-controller architecture and a design methodology for high-frequency transformers are introduced. A single-phase three-level SPWM modulation strategy is then presented. Based on this modulation technique, a high-frequency, high-voltage plasma power supply prototype incorporating air pumps and rotary motors was developed. Experimental validation demonstrated stable generation of plasma gas at a frequency of 25 kHz, with an output voltage of 10.79 kV and an output power of 1.75 kW. Results indicate that the refined power supply enhances electrical utilization efficiency, resolves neutral-point imbalance issues, and simplifies manufacturing through its integrated driver-controller design. This work offers a valuable reference for advancing high-frequency, high-voltage plasma technologies.

A novel circuit topology for an on-board battery charger for plugged-in electric vehicles (PEVs) is presented in this paper. The proposed on-board battery charger is composed of three H-bridges on the primary side, a high-frequency transformer (HFT), and a current doubler circuit on the secondary side of the HFT. As part of an electric vehicle (EV) on-board charger, it is required to have a highly compact and efficient, lightweight, and isolated direct current (DC)–DC converter to enable battery charging through voltage/current regulation. In this work, performance characteristics of full-bridge phase-shift topology are analyzed and compared for EV charging applications. The current doubler with synchronous rectification topology is chosen due to its wider-range soft-switching availability over the full load range, and potential for a smaller and more compact size. The design employs a phase-shift full-bridge topology in the primary power stage. The current doubler with synchronous recitation is placed on the secondary. Over 92% of efficiency is achieved on the isolated charger. Design considerations for optimized zero-voltage transition are disused.

In this paper, a CGH40010F GaN-based wideband RF rectifier with high rectification efficiency is presented. A novel continuous class-EFJ-mode rectifier is constructed by combining a continuous class-J-mode rectifier and class-EF-mode rectifier under specific impedance conditions. This novel continuous class-EFJ-mode rectifier has high rectification efficiency and wide bandwidth at the same time. For validation, a wideband high-efficiency class-EFJ-mode rectifier functioning within the 2.0–3.0 GHz range is designed, fabricated, and measured. The measurements indicate that, with an input power of 40 dBm and a resistance of 72 Ω on the dc load, the implemented rectifier sustains a rectification efficiency exceeding 60% across its entire operational frequency band. Meanwhile, the dimensions of the circuits are only 3 cm × 3.1 cm.