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We report results from Hall effect studies on Al x Ga 1− x As ( x  = 0.23–0.24) with bandgap energies of 1.76 ± 0.01 eV grown by liquid-phase epitaxy (LPE). Room-temperature Hall measurements on unintentionally doped AlGaAs revealed p -type background doping for concentrations in the range 3.7–5.2 × 10 16  cm −3 . Sn, Te, Ge, and Zn-doped AlGaAs were also characterized to study the relationship between doping concentrations and the atomic fractions of the dopants in the melt. Temperature-dependent Hall measurements were performed to determine the activation energies of the four dopants. Deep donor levels (DX centers) were dominant for Sn-doped Al 0.24 Ga 0.76 As, but not for Te-doped Al 0.24 Ga 0.76 As. Comparison of the temperature-dependent Hall effect results for unintentionally and intentionally doped Al 0.24 Ga 0.76 As indicated that the impurity contributing to the p -type background doping had the same activation energy as Mg. We thus suggest a Te-doped emitter and an undoped or Ge-doped base to maximize the efficiency of Al x Ga 1− x As ( x  ∼ 0.23) solar cells grown by LPE.

Single-crystalline films (SCFs) of the LuAG: Ce garnet grown using the liquid-phase epitaxy method onto YAG single-crystal (SC) substrates were investigated for possible applications as composite thermoluminescent (TL) detectors. Such detectors may help to register the different components of ionizing radiation fields with various penetration depths, e.g., heavy charged particles and gamma or beta rays. It was found that the TL signal of LuAG: Ce SCF sufficiently differs from that of the YAG substrate concerning both the temperature and wavelength of emissions. Furthermore, even by analyzing TL glow curves, it was possible to distinguish the difference between weakly and deeply penetrating types of radiation. Within a test involving the exposure of detectors with the mixed alpha/beta radiations, the doses of both components were determined with an accuracy of a few percent.

This manuscript summarizes recent results on the development of composite luminescent materials based on the single-crystalline films and single crystals of simple and mixed garnet compounds obtained by the liquid-phase epitaxy growth method. Such composite materials can be applied as scintillating and thermoluminescent (TL) detectors for radiation monitoring of mixed ionization fluxes, as well as scintillation screens in the microimaging techniques. The film and crystal parts of composite detectors were fabricated from efficient scintillation/TL materials based on Ce3+-, Pr3+-, and Sc3+-doped Lu3Al5O12 garnets, as well as Ce3+-doped Gd3−xAxAl5−yGayO12 mixed garnets, where A = Lu or Tb; x = 0–1; y = 2–3 with significantly different scintillation decay or positions of the main peaks in their TL glow curves. This work also summarizes the results of optical study of films, crystals, and epitaxial structures of these garnet compounds using absorption, cathodoluminescence, and photoluminescence. The scintillation and TL properties of the developed materials under α- and β-particles and γ-quanta excitations were studied as well. The most efficient variants of the composite scintillation and TL detectors for monitoring of composition of mixed beams of ionizing radiation were selected based on the results of this complex study.

LiNbO3 plays a significant role in modern integrated photonics because of its unique properties. One of the challenges in modern integrated photonics is reducing chip production cost. Today, the most widespread yet expensive method to fabricate thin films of LiNbO3 is the smart cut method. The high production cost of smart-cut chips is caused by the use of expensive equipment for helium implantation. A prospective method to reduce the cost of photonic integrated circuits is to use sputtered thin films of lithium niobite, since sputtering technology does not require helium implantation equipment. The purpose of this review is to assess the feasibility of applying sputtered LiNbO3 thin films in integrated photonics. This work compares sputtered LiNbO3 thin films and those fabricated by widespread methods, including the smart cut method, liquid-phase epitaxy, chemical vapor deposition, pulsed laser deposition, and molecular-beam epitaxy.

Liquid-phase epitaxy (LPE) is a material growth technology used in the fabrication of mercury cadmium telluride (HgCdTe) infrared (IR) detectors, which is the highest-performing solution in the IR community. This paper presents the most successful LPE technology, “infinite-melt” vertical liquid-phase epitaxy (VLPE) from Hg-rich solutions. To fulfill requirements for large-format infrared focal-plane detectors, solutions were required to improve the uniformity, yield, and material properties of HgCdTe liquid-phase epitaxial (LPE) and cadmium zinc telluride (CdZnTe or CZT) bulk growth as well as substrate fabrication processing. Raytheon Vision Systems (RVS) produces CdZnTe substrates for epitaxial growth, and in this work, advancements in boule growth processes and metrology led to the identification and elimination of the infrared opaque extended defects within CdZnTe material. Boule growth advancements have also decreased the Cd precipitate defect diameter by a factor of 4. These improvements enabled large-format focal-plane arrays (FPAs) with uniform sensor response. Also, improvement in our polishing process has reduced substrate processing time and total thickness variation (TTV), improving downstream lithography and hybridization processes. Optimizing LPE growth chemistry dynamics resulted in the elimination of large defects, decreased density of epitaxial defects, and improved control of cut-on and thickness of resulting layers. Implementation of custom software allowed real-time prediction during layer growth which resulted in a higher process yield. The continuous improvement of VLPE results in better uniformity, reduced noise, and competitive die size, compared to other long-wave (LW) second-generation detector processes.

This work was dedicated to the development of novel types of composite phosphor converters of white LED, based on the epitaxial structures containing Y3Al5O12:Ce (YAG:Ce) and Tb3Al5O12:Ce (TbAG:Ce) single crystalline films, steeply grown, using the liquid-phase epitaxy method, onto LuAG:Ce single crystal substrates. The influence of Ce3+ concentration in the LuAG:Ce substrate, as well as the thickness of the subsequent YAG:Ce and TbAG:Ce films, on the luminescence and photoconversion properties of the three-layered composite converters were investigated. Compared to its traditional YAG:Ce counterpart, the developed composite converter demonstrates broadened emission bands, due to the compensation of the cyan–green dip by the additional LuAG:Ce substrate luminescence, along with yellow–orange luminescence from the YAG:Ce and TbAG:Ce films. Such a combination of emission bands from various crystalline garnet compounds allows the production of a wide emission spectrum of WLEDs. In turn, the variation in the thickness and activator concentration in each part of the composite converter allows the production of almost any shade from green to orange emission on the chromaticity diagram.

This study reports on the optoelectronic properties of porphyrin-based metal–organic framework (MOF) thin films fabricated by a facile liquid-phase epitaxy approach. This approach affords the growth of MOF thin films that are free of morphological imperfections, more suitable for optoelectronic applications. Chemical modifications such as the porphyrin ligand metallation have been found to preserve the morphology of the grown films making this approach particularly suitable for molecular alteration of MOF thin film optoelectronic properties without compromising its mesoscale morphology significantly. Particularly, the metallation of the ligand was found to be effective to tune the MOF bandgap. These porphyrin-based MOF thin films were shown to function effectively as donor layers in solar cells based on a Fullerene-C60 acceptor. The ability to fabricate MOF solar cells free of a liquid-phase acceptor greatly simplifies device fabrication and enables pairing of MOFs as light absorbers with a wide range of acceptors including non-fullerene acceptors.

The recent demonstration of single-crystal organic optoelectronic devices has received widespread attention 1 , 2 , 3 , 4 . But practical applications of such devices require the use of inexpensive organic films deposited on a wide variety of substrates. Unfortunately, the physical properties of these organic thin films do not compare favourably to those of single-crystal materials. Moreover, the basic physical principles governing organic thin-film growth and crystallization are not well understood. Here we report an in situ study of the evolution of pentacene thin films, utilizing the real-time imaging capabilities of photoelectron emission microscopy. By a combination of careful substrate preparation and surface energy control, we succeed in growing thin films with single-crystal grain sizes approaching 0.1 millimetre (a factor of 20–100 larger than previously achieved), which are large enough to fully contain a complete device. We find that organic thin-film growth closely mimics epitaxial growth of inorganic materials, and we expect that strategies and concepts developed for these inorganic systems will provide guidance for the further development and optimization of molecular thin-film devices.

Thin films of semiconducting polyaniline (PANi) nanofibers reinforced with copper oxide (CuO) nanoparticles (NPs) were prepared on glass substrate using spin coating technique. Polyaniline (PANi) have been synthesized by chemical oxidative polymerization method with monomer aniline in presence of (NH 4 ) 2 S 2 O 8 as an oxidant at 0 °C. The copper oxide (CuO) nanoparticles were synthesized by sol–gel method. Physical properties of nanocomposite (NCs) films were characterized and analyzed by X-ray diffraction, Scanning electron microscopy, Fourier transform infrared (FTIR) spectroscopy, UV–vis spectroscopy, Two probe resistivity measurement technique and Thermo-emf measurement. Structural analysis showed that the crystal structure of CuO is not disturbed in the PANi–CuO hybrid nanocomposite. Surface morphology study shows the uniform distribution of CuO nanoparticles in PANi matrix. FTIR and UV–Visible studies confirm the presence of polyaniline in emeraldine base form in the composites and suggest incorporation of CuO in polymer. Two probe electrical resistivity measurements of nanocomposites (NCs) film revealed that the resistivity of PANi increases with increasing content of CuO NPs.

Ultra-high-temperature (>1500 °C) sensors play vital roles in ensuring operational excellence in variety of energy-related applications, such as power plant boilers and gas turbine engines. Crystalline sapphire fibers have enormous potential to replace conventional expensive precious metal (e.g., Pt/Rh)-based high-temperature (>1500 °C) sensors by offering higher environmental robustness and distributed sensing capabilities. However, a lack of proper cladding substantially compromises the performance of the sensor. To overcome this fundamental limitation, we develop a hybrid growing method to fabricate low-loss clad crystalline sapphire fibers. We grow a higher-refractive-index doped crystalline sapphire fiber core using the laser-heated pedestal growth (LHPG) method and lower-refractive-index undoped crystalline sapphire fiber cladding using the liquid-phase epitaxy (LPE) method. Furthermore, due to the existence of this cladding layer, a single mode of operation can be achieved at a core diameter size of 30 μm. The experimental results confirm that the grown clad crystalline sapphire fiber can survive in extremely high-temperature (>1500 °C) harsh environments due to the matched coefficient of thermal expansion (CTE) between the fiber core and the cladding. The numerical results also indicate a temperature sensing accuracy of 3.5 °C. This opens the door for developing point and distributed fiber sensor networks capable of enduring extremely harsh environments at extremely high temperatures.