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"metal‐oxide semiconductors"
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Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages
Electro-optic modulators translate high-speed electronic signals into the optical domain and are critical components in modern telecommunication networks
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,
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and microwave-photonic systems
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,
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. They are also expected to be building blocks for emerging applications such as quantum photonics
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,
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and non-reciprocal optics
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,
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. All of these applications require chip-scale electro-optic modulators that operate at voltages compatible with complementary metal–oxide–semiconductor (CMOS) technology, have ultra-high electro-optic bandwidths and feature very low optical losses. Integrated modulator platforms based on materials such as silicon, indium phosphide or polymers have not yet been able to meet these requirements simultaneously because of the intrinsic limitations of the materials used. On the other hand, lithium niobate electro-optic modulators, the workhorse of the optoelectronic industry for decades
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, have been challenging to integrate on-chip because of difficulties in microstructuring lithium niobate. The current generation of lithium niobate modulators are bulky, expensive, limited in bandwidth and require high drive voltages, and thus are unable to reach the full potential of the material. Here we overcome these limitations and demonstrate monolithically integrated lithium niobate electro-optic modulators that feature a CMOS-compatible drive voltage, support data rates up to 210 gigabits per second and show an on-chip optical loss of less than 0.5 decibels. We achieve this by engineering the microwave and photonic circuits to achieve high electro-optical efficiencies, ultra-low optical losses and group-velocity matching simultaneously. Our scalable modulator devices could provide cost-effective, low-power and ultra-high-speed solutions for next-generation optical communication networks and microwave photonic systems. Furthermore, our approach could lead to large-scale ultra-low-loss photonic circuits that are reconfigurable on a picosecond timescale, enabling a wide range of quantum and classical applications
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,
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including feed-forward photonic quantum computation.
Chip-scale lithium niobate electro-optic modulators that rapidly convert electrical to optical signals and use CMOS-compatible voltages could prove useful in optical communication networks, microwave photonic systems and photonic computation.
Journal Article
Reliability Study of Metal-Oxide Semiconductors in Integrated Circuits
This paper is devoted to the study of CMOS IC parameter degradation during reliability testing. The paper presents a review of literature data on the issue of the reliability of semiconductor devices and integrated circuits and the types of failures leading to the degradation of IC parameters. It describes the tests carried out on the reliability of controlled parameters of integrated circuit TPS54332, such as quiescent current, quiescent current in standby mode, resistance of the open key, and instability of the set output voltage in the whole range of input voltages and in the whole range of load currents. The calculated values of activation energies and acceleration coefficients for different test temperature regimes are given. As a result of the work done, sample rejection tests have been carried out on the TPS54332 IC under study. Experimental fail-safe tests were carried out, with subsequent analysis of the chip samples by the controlled parameter quiescent current. On the basis of the obtained experimental values, the values of activation energy and acceleration coefficient at different temperature regimes were calculated. The dependencies of activation energy and acceleration coefficient on temperature were plotted, which show that activation energy linearly increases with increasing temperature, while the acceleration coefficient, on the contrary, decreases. It was also found that the value of the calculated activation energy of the chip is 0.1 eV less than the standard value of the activation energy.
Journal Article
CMOS circuit design, layout, and simulation
An updated guide to the practical design of both analog and digital integrated circuits. The author - a noted expert on the topic - offers a contemporary review of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and switching power supplies.
Book
Photoelectrochemical Oxidation and Etching Methods Used in Fabrication of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors and Integrated Circuits: A Review
The photoelectrochemical oxidation method was utilized to directly grow a gate oxide layer and simultaneously create gate-recessed regions for fabricating GaN-based depletion-mode metal-oxide-semiconductor high-electron mobility transistors (D-mode MOSHEMTs). The LiNbO3 gate ferroelectric layer and stacked gate oxide layers of LiNbO3/HfO2/Al2O3 were respectively deposited on the created gate-recessed regions using the photoelectrochemical etching method to fabricate the GaN-based enhancement mode MOSHEMTs (E-mode MOSHEMTs). GaN-based complementary integrated circuits were realized by monolithically integrating the D-mode MOSHEMTs and the E-mode MOSHEMTs. The performances of the inverter circuit manufactured using the integrated GaN-based complementary MOSHEMTs were measured and analyzed.
Journal Article
MOSFET modeling for circuit analysis and design
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.
eBook
CMOS millimeter-wave integrated circuits for next generation wireless communication systems
\"This book addresses in-depth technical issues, limitations, considerations and challenges facing millimeter-wave (MMW) integrated circuit and system designers in designing MMW wireless communication systems from the complementary metal-oxide semiconductor (CMOS) perspective. It offers both a comprehensive explanation of fundamental theories and a broad coverage of MMW integrated circuits and systems. CMOS Millimeter-Wave Integrated Circuits for Next Generation Wireless Communication Systems is an excellent reference for faculty, researchers and students working in electrical and electronic engineering, wireless communication, integrated circuit design and circuits and systems. While primarily written for upper-level undergraduate courses, it is also an excellent introduction to the subject for instructors, graduate students, researchers, integrated circuit designers and practicing engineers. Advanced readers could also benefit from this book as it includes many recent state-of-the-art MMW circuits.\" -- Provided by publisher.
Book
CMOS-based cryogenic control of silicon quantum circuits
The most promising quantum algorithms require quantum processors that host millions of quantum bits when targeting practical applications
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. A key challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, an important interconnect bottleneck appears between the quantum chip in a dilution refrigerator and the room-temperature electronics. Advanced lithography supports the fabrication of both control electronics and qubits in silicon using technology compatible with complementary metal oxide semiconductors (CMOS)
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. When the electronics are designed to operate at cryogenic temperatures, they can ultimately be integrated with the qubits on the same die or package, overcoming the ‘wiring bottleneck’
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–
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. Here we report a cryogenic CMOS control chip operating at 3 kelvin, which outputs tailored microwave bursts to drive silicon quantum bits cooled to 20 millikelvin. We first benchmark the control chip and find an electrical performance consistent with qubit operations of 99.99 per cent fidelity, assuming ideal qubits. Next, we use it to coherently control actual qubits encoded in the spin of single electrons confined in silicon quantum dots
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–
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and find that the cryogenic control chip achieves the same fidelity as commercial instruments at room temperature. Furthermore, we demonstrate the capabilities of the control chip by programming a number of benchmarking protocols, as well as the Deutsch–Josza algorithm
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, on a two-qubit quantum processor. These results open up the way towards a fully integrated, scalable silicon-based quantum computer.
A cryogenic CMOS control chip operating at 3 K is used to demonstrate coherent control and simple algorithms on silicon qubits operating at 20 mK.
Journal Article