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A Schottky barrier high-electron-mobility avalanche transit time (HEM-ATT) structure is proposed for terahertz (THz) wave generation. The structure is laterally oriented and based on AlGaN/GaN two-dimensional electron gas (2-DEG). Trenches are introduced at different positions of the top AlGaN barrier layer for realizing different sheet carrier density profiles at the 2-DEG channel; the resulting devices are equivalent to high–low, low–high and low-high–low quasi-Read structures. The DC, large-signal and noise simulations of the HEM-ATTs were carried out using the Silvaco ATLAS platform, non-sinusoidal-voltage-excited large-signal and double-iterative field-maximum small-signal simulation models, respectively. The breakdown voltages of the devices estimated via simulation were validated by using experimental measurements; they were found to be around 17–18 V. Under large-signal conditions, the series resistance of the device is estimated to be around 20 Ω. The large-signal simulation shows that the HEM-ATT source is capable of delivering nearly 300 mW of continuous-wave peak power with 11% conversion efficiency at 1.0 THz, which is a significant improvement over the achievable THz power output and efficiency from the conventional vertical GaN double-drift region (DDR) IMPATT THz source. The noise performance of the THz source was found to be significantly improved by using the quasi-Read HEM-ATT structures compared to the conventional vertical Schottky barrier IMPATT structure. These devices are compatible with the state-of-the-art medium-scale semiconductor device fabrication processes, with scope for further miniaturization, and may have significant potential for application in compact biomedical spectroscopy systems as THz solid-state sources.

Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including versatile functionality, low-cost, large-area production, and dense integration. However, the material dissimilarity between III-V and Si, such as lattice constant, coefficient of thermal expansion, and polarity, introduces a high density of various defects during the growth of III-V on Si. In order to tackle these issues, a variety of growth techniques have been developed so far, leading to the demonstration of high-quality III-V materials and optoelectronic devices monolithically grown on various Si-based platform. In this paper, the recent advances in the heteroepitaxial growth of III-V on Si substrates, particularly GaAs and InP, are discussed. After introducing the fundamental and technical challenges for III-V-on-Si heteroepitaxy, we discuss recent approaches for resolving growth issues and future direction towards monolithic integration of III-V on Si platform.

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III–V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10−6 A/cm2 at −2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors.

HighlightsA three single-phase Cu, Cu2O, and CuO monolithic nanowire network was successfully fabricated by reversible selective laser-induced redox (rSLIR)Monolithic metal–semiconductor–metal multispectral photodetectors with Cu nanowire (CuNW) as an electrode and Cu2ONW/CuONW having different bandgaps were suggested.Active electronics are usually composed of semiconductor and metal electrodes which are connected by multiple vacuum deposition steps and photolithography patterning. However, the presence of interface of dissimilar material between semiconductor and metal electrode makes various problems in electrical contacts and mechanical failure. The ideal electronics should not have defective interfaces of dissimilar materials. In this study, we developed a novel method to fabricate active electronic components in a monolithic seamless fashion where both metal and semiconductor can be prepared from the same monolith material without creating a semiconductor–metal interface by reversible selective laser-induced redox (rSLIR) method. Furthermore, rSLIR can control the oxidation state of transition metal (Cu) to yield semiconductors with two different bandgap states (Cu2O and CuO with bandgaps of 2.1 and 1.2 eV, respectively), which may allow multifunctional sensors with multiple bandgaps from the same materials. This novel method enables the seamless integration of single-phase Cu, Cu2O, and CuO, simultaneously while allowing reversible, selective conversion between oxidation states by simply shining laser light. Moreover, we fabricated a flexible monolithic metal–semiconductor–metal multispectral photodetector that can detect multiple wavelengths. The unique monolithic characteristics of rSLIR process can provide next-generation electronics fabrication method overcoming the limitation of conventional photolithography methods.

Hafnium oxide-based ferroelectrics, particularly zirconium-doped HfO 2 (HZO), have demonstrated excellent compatibility with CMOS fabrication processes. However, the impact of post-metallization annealing (PMA)—a key step in optimizing device performance—on CMOS and FeFET co-integrated devices has yet to be fully explored. This study investigates the effects of PMA under N 2 and H 2 ambients on the electrical properties of pMOSFET and nFeFET devices monolithically co-integrated on an 8-inch wafer. N 2 annealing leads to a significantly larger memory window in FeFETs, attributed to enhanced crystallinity and reduced oxide-trapped charges. In contrast, while H 2 annealing is less effective in improving ferroelectric properties, it markedly lowers the interface trap density (D it ) in both CMOS and FeFET devices. This reduction in D it leads to improved SS, as reflected in the higher gain observed in FeFET-based co-integrated inverters. These findings offer valuable insights for optimizing PMA conditions based on the performance requirements for co-integrated FeFET and CMOS devices.

The increasing interest in the Internet of Things (IoT) has led to the rapid development of low-power sensors and wireless networks. However, there are still several barriers that make a global deployment of the IoT difficult. One of these issues is the energy dependence, normally limited by the capacitance of the batteries. A promising solution to provide energy autonomy to the IoT nodes is to harvest residual energy from ambient sources, such as motion, vibrations, light, or heat. Mechanical energy can be converted into electrical energy by using piezoelectric transducers. The piezoelectric generators provide an alternating electrical signal that must be rectified and, therefore, needs a power management circuit to adapt the output to the operating voltage of the IoT devices. The bonding and packaging of the different components constitute a large part of the cost of the manufacturing process of microelectromechanical systems (MEMS) and integrated circuits. This could be reduced by using a monolithic integration of the generator together with the circuitry in a single chip. In this work, we report the optimization, fabrication, and characterization of a vibration-driven piezoelectric MEMS energy harvester, and the design and simulation of a charge-pump converter based on a standard complementary metal–oxide–semiconductor (CMOS) technology. Finally, we propose combining MEMS and CMOS technologies to obtain a fully integrated system that includes the piezoelectric generator device and the charge-pump converter circuit without the need of external components. This solution opens new doors to the development of low-cost autonomous smart dust devices.

In this study, we present a highly integrated design of organic optoelectronic devices for Point-of-Need (PON) nitrite (NO2−) measurement. The spectrophotometric investigation of nitrite concentration was performed utilizing the popular Griess reagent and a reflection-based photometric unit with an organic light emitting diode (OLED) and an organic photodetector (OPD). In this approach a nitrite concentration dependent amount of azo dye is formed, which absorbs light around ~540 nm. The organic devices are designed for sensitive detection of absorption changes caused by the presence of this azo dye without the need of a spectrometer. Using a green emitting TCTA:Ir(mppy)3 OLED (peaking at ~512 nm) and a DMQA:DCV3T OPD with a maximum sensitivity around 530 nm, we successfully demonstrated the operation of the OLED–OPD pair for nitrite sensing with a low limit of detection 46 µg/L (1.0 µM) and a linearity of 99%. The hybrid integration of an OLED and an OPD with 0.5 mm × 0.5 mm device sizes and a gap of 0.9 mm is a first step towards a highly compact, low cost and highly commercially viable PON analytic platform. To our knowledge, this is the first demonstration of a fully organic-semiconductor-based monolithic integrated platform for real-time PON photometric nitrite analysis.

The realization of high quality (0001) GaN on Si(100) is paramount importance for the monolithic integration of Si‐based integrated circuits and GaN‐enabled optoelectronic devices. Nevertheless, thorny issues including large thermal mismatch and distinct crystal symmetries typically bring about uncontrollable polycrystalline GaN formation with considerable surface roughness on standard Si(100). Here a breakthrough of high‐quality single‐crystalline GaN film on polycrystalline SiO2/Si(100) is presented by quasi van der Waals epitaxy and fabricate the monolithically integrated photonic chips. The in‐plane orientation of epilayer is aligned throughout a slip and rotation of high density AlN nuclei due to weak interfacial forces, while the out‐of‐plane orientation of GaN can be guided by multi‐step growth on transfer‐free graphene. For the first time, the monolithic integration of light‐emitting diode (LED) and photodetector (PD) devices are accomplished on CMOS‐compatible SiO2/Si(100). Remarkably, the self‐powered PD affords a rapid response below 250 µs under adjacent LED radiation, demonstrating the responsivity and detectivity of 2.01 × 105 A/W and 4.64 × 1013 Jones, respectively. This work breaks a bottleneck of synthesizing large area single‐crystal GaN on Si(100), which is anticipated to motivate the disruptive developments in Si‐integrated optoelectronic devices. The work breaks a bottleneck of synthesizing high quality single‐crystal GaN on amorphous SiO2/Si(100) and demonstrates the monolithically integrated photonic chips on CMOS‐compatible substrate for the first time. The self‐powered PD affords a rapid response below 250 µs under adjacent LED radiation, demonstrating the high responsivity and detectivity of 2.01 × 105 A W−1 and 4.64 × 1013 Jones.

This work presents a MEMS resonator used as an ultra-high resolution water vapor sensor (humidity sensing) to detect human activity through finger movement as a demonstrator example. This microelectromechanical resonator is designed as a clamped-clamped beam fabricated using the top metal layer of a commercial CMOS technology (0.35 μm CMOS-AMS) and monolithically integrated with conditioning and readout circuitry. Sensing is performed through the resonance frequency change due to the addition of water onto the clamped-clamped beam coming from the moisture created by the evaporation of water in the human body. The sensitivity and high-speed response to the addition of water onto the metal bridge, as well as the quick dewetting of the surface, make it suitable for low-power human activity sensing.

Presented is a cavity-first approach for producing released microelectromechanical system (MEMS) structures from the front side of a silicon on insulator (SOI) wafer. This approach shows excellent process compatibilities to CMOS and is significantly valuable to MEMS–CMOS monolithic integration. In this approach, prior to metal layer deposition and other components fabrication, which are easily damaged by vapour-phase hydrofluoric (HF) acid, release holes with a diameter of a few micrometres were created in the active silicon layer, and the cavities were formed after removing the underneath SiO2 box layer by vapour-phase HF etching. An amorphous fluoropolymer thin film was then successfully introduced to refill those release holes without entering into the cavities, after which the wafer can be fabricated by standard process with negligible surface fluctuation. Finally, MEMS structures were released from the front side of the wafer by inductively coupled plasma reactive ion etching (ICP-RIE). This approach enables monolithic integration of MEMS with CMOS circuits on SOI wafers with easy-package capability, eliminates the requirements on device release by wet chemical etching or ICP-RIE from the backside of the wafer and reduces the risk of device damage by vapour-phase HF etching. This approach also excels others in simplicity and high yields with better thickness uniformity and less residual stress in a MEMS structure.