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3 result(s) for "nonvolatile buffers"
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Write-variation aware alternatives to replace SRAM buffers with non-volatile buffers in on-chip interconnects
With the advancement in CMOS technology and multiple processors on the chip, communication across these cores is managed by a network-on-chip (NoC). Power and performance of these NoC interconnects have become a significant factor.The authors aim to reduce the leakage power consumption of NoC buffers by the use of non-volatile spin transfer torque random access memory (STT-RAM)-based buffers. STT-RAM technology has the advantages of high density and low leakage but suffers from low endurance. This low endurance has an impact on the lifetime of the router on the whole due to unwanted write-variations governed by virtual channel (VC) allocation policies. Here various VC allocation policies that help the uniform distribution of the writes across the buffers are proposed. Iso-capacity and iso-area-based alternatives to replace SRAM buffers with STT-RAM buffers are also presented. Pure STT-RAM buffers, however, impact the network latency. To mitigate this, a hybrid variant of the proposed policies which uses alternative VCs made of SRAM technology in the case of heavy network traffic is proposed. Experimental evaluation of full system simulation shows that proposed policies reduce the write variation by 99% and improve lifetime by 3.2 times and 1093 times, respectively. Also a 55.5% gain in the energy delay product is obtained.
HMB-I/O: Fast Track for Handling Urgent I/Os in Nonvolatile Memory Express Solid-State Drives
Differentiated I/O services for applications with their own requirements are very important for user satisfaction. Nonvolatile memory express (NVMe) solid-state drive (SSD) architecture can improve the I/O bandwidth with its numerous submission queues, but the quality of service (QoS) of each I/O request is never guaranteed. In particular, if many I/O requests are pending in the submission queues due to a bursty I/O workload, urgent I/O requests can be delayed, and consequently, the QoS requirements of applications that need fast service cannot be met. This paper presents a scheme that handles urgent I/O requests without delay even if there are many pending I/O requests. Since the pending I/O requests in the submission queues cannot be controlled by the host, the host memory buffer (HMB), which is part of the DRAM of the host that can be accessed from the controller, is used to process urgent I/O requests. Instead of sending urgent I/O requests into the SSDs through legacy I/O paths, the latency is removed by directly inserting them into the HMB. Emulator experiments demonstrated that the proposed scheme could reduce the average and tail latencies by up to 99% and 86%, respectively.
High‐k Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory Applications
This chapter contains sections titled: Introduction Overview of High‐k Dielectric Studies for FeFET Applications Developing of HfTaO Buffer Layers for FeFET Applications Summary References