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In this study, nanoscale integrated all-optical XNOR, XOR, and NAND logic gates were realized based on all-optical tunable on-chip plasmon-induced transparency in plasmonic circuits. A large nonlinear enhancement was achieved with an organic composite cover layer based on the resonant excitation-enhancing nonlinearity effect, slow light effect, and field confinement effect provided by the plasmonic nanocavity mode, which ensured a low excitation power of 200 μW that is three orders of magnitude lower than the values in previous reports. A feature size below 600 nm was achieved, which is a one order of magnitude lower compared to previous reports. The contrast ratio between the output logic states “1” and “0” reached 29 dB, which is among the highest values reported to date. Our results not only provide an on-chip platform for the study of nonlinear and quantum optics but also open up the possibility for the realization of nanophotonic processing chips based on nonlinear plasmonics.

The nonlinear optical (NLO) response of photonic materials plays an important role in the understanding of light–matter interaction as well as pointing out a diversity of photonic and optoelectronic applications. Among the recently studied materials, 2D-LTMDs (bi-dimensional layered transition metal dichalcogenides) have appeared as a beyond-graphene nanomaterial with semiconducting and metallic optical properties. In this article, we review most of our work in studies of the NLO response of a series of 2D-LTMDs nanomaterials in suspension, using six different NLO techniques, namely hyper Rayleigh scattering, Z-scan, photoacoustic Z-scan, optical Kerr gate, and spatial self-phase modulation, besides the Fourier transform nonlinear optics technique, to infer the nonlinear optical response of semiconducting MoS2, MoSe2, MoTe2, WS2, semimetallic WTe2, ZrTe2, and metallic NbS2 and NbSe2. The nonlinear optical response from a thermal to non-thermal origin was studied, and the nonlinear refraction index and nonlinear absorption coefficient, where present, were measured. Theoretical support was given to explain the origin of the nonlinear responses, which is very dependent on the spectro-temporal regime of the optical source employed in the studies.

Nonlinear optical materials are cornerstones of modern optics including ultrafast lasers, optical computing, and harmonic generation. The nonlinear coefficients of optical materials suffer from limitations in strength and bandwidth. Also, the nonlinear performance is typically monotonous without polarization selectivity, and to date, no natural material has been found to possess nonlinear coefficients with positive or negative signs simultaneously at a specific wavelength, all of which impede practical applications in the specific scenario. Here, we realize broadband large optical nonlinearity accompanied with ultrafast dynamics in a coupled system composed of gold dolmens and an epsilon-near-zero material for dual orthogonal polarizations simultaneously. The system also shows the polarization-selected nonlinearity transition properties, where the sign of the optical nonlinear refractive indexes can be converted via polarization switching. This guarantees active transitions from self-focusing to self-defocusing by polarization rotation without tuning wavelength in practical utilizations. The measured nonlinear refractive index and susceptibility demonstrate more than three orders of magnitude enhancement over a 400-nm-bandwidth compared with the constituents, while maintaining the sub-1 ps time response. The realized enhanced, ultrafast response, and the polarization tunability ensure the designed system a promising platform for the development of integrated ultrafast laser sources, all-optical circuits and quantum chips.

Ultracompact chip-integrated all-optical half- and full-adders are realized based on signal-light induced plasmonic-nanocavity-modes shift in a planar plasmonic microstructure covered with a nonlinear nanocomposite layer, which can be directly integrated into plasmonic circuits. Tremendous nonlinear enhancement is obtained for the nanocomposite cover layer, attributed to resonant excitation, slow light effect, as well as field enhancement effect provided by the plasmonic nanocavity. The feature size of the device is <15 μm, which is reduced by three orders of magnitude compared with previous reports. The operating threshold power is determined to be 300 μW (corresponding to a threshold intensity of 7.8 MW/cm ), which is reduced by two orders of magnitude compared with previous reports. The intensity contrast ratio between two output logic states, “1” and “0,” is larger than 27 dB, which is among the highest values reported to date. Our work is the first to experimentally realize on-chip half- and full-adders based on nonlinear plasmonic nanocavities having an ultrasmall feature size, ultralow threshold power, and high intensity contrast ratio simultaneously. This work not only provides a platform for the study of nonlinear optics, but also paves a way to realize ultrahigh-speed signal computing chips.

Ultracompact chip-integrated all-optical diode is realized experimentally in a plasmonic microstructure, consisting of a plasmonic waveguide side-coupled two asymmetric plasmonic composite nanocavities covered with a multicomponent nanocomposite layer, formed directly in a plasmonic circuit. Extremely large optical nonlinearity enhancement is obtained for the multicomponent nanocomposite cover layer, originating from resonant excitation, slow-light effect, and field enhancement effect. Nonreciprocal transmission was achieved based on the difference in the shift magnitude of the transparency window centers of two asymmetric plasmonic nanocavities induced by the signal light, itself, for the forward and backward propagation cases. An ultralow threshold incident light power of 145 μW (corresponding to a threshold intensity of 570 kW/cm ) is realized, which is reduced by seven orders of magnitude compared with previous reports. An ultrasmall feature size of 2 μm and a transmission contrast ratio of 15 dB are obtained simultaneously.

In this work, we report the nonlinear optical absorption and asymmetric charge carrier conduction in single layer graphene films deposited by chemical vapor deposition (CVD) technique on copper foils with pretreated surface. XRD texture and pole figure analysis of the substrate are utilized for the visualization of the effect of the pretreatment on the substrate. The synthesised graphene is employed as a channel layer in a back gated field-effect transistor and the asymmetric behavior of charge carriers is analyzed. Nonlinear optical response of graphene is recorded after transferring it onto a quartz substrate. Open aperture Z-scan technique yields a nonlinear absorption coefficient of 5.34 × 106 cm GW−1. The film exhibits saturable absorption in the visible range with a saturation intensity as low as 0.134 GW cm−2.

A photon avalanche (PA) effect that occurs in lanthanide-doped solids gives rise to a giant nonlinear response in the luminescence intensity to the excitation light intensity. As a result, much weaker lasers are needed to evoke such PAs than for other nonlinear optical processes. Photon avalanches are mostly restricted to bulk materials and conventionally rely on sophisticated excitation schemes, specific for each individual system. Here we show a universal strategy, based on a migrating photon avalanche (MPA) mechanism, to generate huge optical nonlinearities from various lanthanide emitters located in multilayer core/shell nanostructrues. The core of the MPA nanoparticle, composed of Yb 3+ and Pr 3+ ions, activates avalanche looping cycles, where PAs are synchronously achieved for both Yb 3+ and Pr 3+ ions under 852 nm laser excitation. These nanocrystals exhibit a 26th-order nonlinearity and a clear pumping threshold of 60 kW cm −2 . In addition, we demonstrate that the avalanching Yb 3+ ions can migrate their optical nonlinear response to other emitters (for example, Ho 3+ and Tm 3+ ) located in the outer shell layer, resulting in an even higher-order nonlinearity (up to the 46th for Tm 3+ ) due to further cascading multiplicative effects. Our strategy therefore provides a facile route to achieve giant optical nonlinearity in different emitters. Finally, we also demonstrate applicability of MPA emitters to bioimaging, achieving a lateral resolution of ~62 nm using one low-power 852 nm continuous-wave laser beam. A general mechanism, migrating photon avalanche, can generate large optical nonlinearity from various lanthanides emitters at the nanoscale.

With the advent of the era of big data, artificial intelligence has attracted continuous attention from all walks of life, and has been widely used in medical image analysis, molecular and material science, language recognition and other fields. As the basis of artificial intelligence, the research results of neural network are remarkable. However, due to the inherent defect that electrical signal is easily interfered and the processing speed is proportional to the energy loss, researchers have turned their attention to light, trying to build neural networks in the field of optics, making full use of the parallel processing ability of light to solve the problems of electronic neural networks. After continuous research and development, optical neural network has become the forefront of the world. Here, we mainly introduce the development of this field, summarize and compare some classical researches and algorithm theories, and look forward to the future of optical neural network.

All-optical signal processing based on nonlinear optical devices is promising for ultrafast information processing in optical communication systems. Recent advances in two-dimensional (2D) layered materials with unique structures and distinctive properties have opened up new avenues for nonlinear optics and the fabrication of related devices with high performance. This paper reviews the recent advances in research on third-order optical nonlinearities of 2D materials, focusing on all-optical processing applications in the optical telecommunications band near 1550 nm. First, we provide an overview of the material properties of different 2D materials. Next, we review different methods for characterizing the third-order optical nonlinearities of 2D materials, including the Z-scan technique, third-harmonic generation (THG) measurement, and hybrid device characterization, together with a summary of the measured n2 values in the telecommunications band. Finally, the current challenges and future perspectives are discussed.

The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported.Theoret-ical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the con-tinuum(BIC)and the magnetic dipole dominates these peculiar states.A smaller size of the defect in the broken-sym-metry block gives rise to the resonance with a larger Q factor.Importantly,this relationship can be tuned by changing the structural parameter,resulting from the modulation of the topological configuration of BICs.Consequently,a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure.At this sharp resonance,the in-tensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silic-on film.The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances,which may promote the development of the potential meta-devices for nonlinearity,lasing action,and sensing.