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In this study, plasma gas species and temperature were varied to evaluate the reactive species produced and the bactericidal effect of plasma. Nitrogen, carbon dioxide, oxygen, and argon were used as the gas species, and the gas temperature of each plasma was varied from 30 to 90 °C. Singlet oxygen, OH radicals, hydrogen peroxide, and ozone generated by the plasma were trapped in a liquid, and then measured. Nitrogen plasma produced up to 172 µM of the OH radical, which was higher than that of the other plasmas. In carbon dioxide plasma, the concentration of singlet oxygen increased from 77 to 812 µM, as the plasma gas temperature increased from 30 to 90 °C. The bactericidal effect of carbon dioxide and nitrogen plasma was evaluated using bactericidal ability, which indicated the log reduction per minute. In carbon dioxide plasma, the bactericidal ability increased from 5.6 to 38.8, as the temperature of the plasma gas increased from 30 to 90 °C. Conversely, nitrogen plasma did not exhibit a high bactericidal effect. These results demonstrate that the plasma gas type and temperature have a significant influence on the reactive species produced and the bactericidal effect of plasma.

Reactive plasma spraying is a promising technology for the in situ formation of aluminum nitride (AlN) coatings. Recently, it became possible to fabricate cubic-AlN-(c-AlN) based coatings through reactive plasma spraying of Al powder in an ambient atmosphere. However, it was difficult to fabricate a coating with high AlN content and suitable thickness due to the coalescence of the Al particles. In this study, the influence of using AlN additive (h-AlN) to increase the AlN content of the coating and improve the reaction process was investigated. The simple mixing of Al and AlN powders was not suitable for fabricating AlN coatings through reactive plasma spraying. However, it was possible to prepare a homogenously mixed, agglomerated and dispersed Al/AlN mixture (which enabled in-flight interaction between the powder and the surrounding plasma) by wet-mixing in a planetary mill. Increasing the AlN content in the mixture prevented coalescence and increased the nitride content gradually. Using 30 to 40 wt% AlN was sufficient to fabricate a thick (more than 200 µm) AlN coating with high hardness (approximately 1000 Hv). The AlN additive prevented the coalescence of Al metal and enhanced post-deposition nitriding through N2 plasma irradiation by allowing the nitriding species in the plasma to impinge on a larger Al surface area. Using AlN as a feedstock additive was found to be a suitable method for fabricating AlN coatings by reactive plasma spraying. Moreover, the fabricated coatings consist of hexagonal (h-AlN), c-AlN (rock-salt and zinc-blend phases) and certain oxides: aluminum oxynitride (Al5O6N), cubic sphalerite Al23O27N5 (ALON) and Al2O3. The zinc-blend c-AlN and ALON phases were attributed to the transformation of the h-AlN feedstock during the reactive plasma spraying. Thus, the zinc-blend c-AlN and ALON phases were not included in the feedstock and were not formed through nitriding of the Al.

Imaging Mie polarimetry is key to determining spatially resolved information about the properties, i.e. refractive index and grain size, of particle clouds, such as during the growth process in reactive particle producing plasmas. Asymmetries in the intensity maps of the different Stokes parameters resulting from the anisotropic scattering of polarized laser light complicate the analysis and require the use of radiative transfer (RT) simulations. We use RT simulations to investigate the asymmetric scattering behavior based on a model of a typical reactive argon-acetylene plasma. We address possible misinterpretations and explore the potential for analyzing particle properties. We find that the asymmetric pattern of the intensity distributions is highly dependent on the refractive index, providing the potential to determine the refractive index and grain size at any time during the growth process.

The potential of cold atmospheric plasma (CAP) in biomedical applications has received significant interest, due to its ability to generate reactive oxygen and nitrogen species (RONS). Upon exposure to living cells, CAP triggers alterations in various cellular components, such as the cell membrane. However, the permeation of RONS across nitrated and oxidized membranes remains understudied. To address this gap, we conducted molecular dynamics simulations, to investigate the permeation capabilities of RONS across modified cell membranes. This computational study investigated the translocation processes of less hydrophilic and hydrophilic RONS across the phospholipid bilayer (PLB), with various degrees of oxidation and nitration, and elucidated the impact of RONS on PLB permeability. The simulation results showed that less hydrophilic species, i.e., NO, NO2, N2O4, and O3, have a higher penetration ability through nitro-oxidized PLB compared to hydrophilic RONS, i.e., HNO3, s-cis-HONO, s-trans-HONO, H2O2, HO2, and OH. In particular, nitro-oxidation of PLB, induced by, e.g., cold atmospheric plasma, has minimal impact on the penetration of free energy barriers of less hydrophilic species, while it lowers these barriers for hydrophilic RONS, thereby enhancing their translocation across nitro-oxidized PLB. This research contributes to a better understanding of the translocation abilities of RONS in the field of plasma biomedical applications and highlights the need for further analysis of their role in intracellular signaling pathways.

Transparent conductive oxide (TCO) films are widely used as electrodes in photovoltaic devices, such as perovskite solar cells and heterojunction solar cells. However, in the conventional physical vapor deposition process, there may be ion bombardment damage to the underlayer coatings, and high deposition temperature also have an adverse effect on perovskite and amorphous silicon layers during TCO deposition. Herein, reactive plasma deposition was effectively utilized for cerium-doped indium oxide (ICO) film as an ultra-transparent electrode. The effects of plasma gun current and the oxygen ratio on the optical and electrical properties, and also on the structure of the ICO films, were investigated. With an industry-scale reactive plasma deposition tool, an outcome of 140-nm ICO film can be achieved within 50 s, which represents a good throughput with the average growth rate of 2.8 nm/s. When the working current was 165 A and the oxygen ratio was 12%, the average transmittance of ICO films reached the highest value (93.09%) in the wavelength range of 400–1200 nm. The average transmittance in the visible wavelength range was 94.23%. The peak transmittance was up to 99.67% at 515 nm, and the corresponding resistivity was 4.68 × 10−4 Ω cm.

Inductively coupled plasma–reactive etching (ICP-RIE) of InGaZnO (IGZO) thin films was studied with variations in gas mixtures of hydrochloride (HCl) and argon (Ar). The dry etching characteristics of the IGZO films were investigated according to radiofrequency bias power, gas mixing ratio, and chamber pressure. The IGZO film showed an excellent etch rate of 83.2 nm/min from an optimized etching condition such as a plasma power of 100 W, process pressure of 3 mTorr, and HCl ratio of 75% (HCl:Ar at 30 sccm:10 sccm). In addition, this ICP-RIE etching condition with a high HCl composition ratio at a moderate RIE power of 100 W showed a low etched pattern skew and low photoresist damage on the IGZO patterns. It also provided excellent surface morphology of the SiO2 film underneath after the entire dry etching of the IGZO layer. The IGZO thin film as an active layer was successfully patterned under the ICP-RIE dry etching under the HCl-Ar gas mixture, affording an excellent electrical characteristic in the resultant top-gate IGZO thin-film transistor.

Black silicon has attracted significant interest for various engineering applications, including solar cells, due to its ability to create highly absorbent surfaces or interfaces for light. It enhances light absorption in crystalline solar cells, improving the efficiency of converting incident light into electricity for photovoltaic applications. This research focused on fabricating nanostructures that played a critical role in enhancing light absorption in the upper layers of solar cells. These nanostructures were created using the black silicon method, forming a layer known as “black silicon”. The coating not only improved the efficiency of crystalline solar cells but also enhanced their stability. The antireflection coating, composed of nanostructures with various shapes, including conical, pillar-like, and spike-like forms, achieved a reflectivity as low as 10% in the spectral range of 400–700 nm. This corresponded to a sample with α = 0.85 and a chuck bias of 4 W. An Inductively Coupled Plasma Reactive Ion Etching (ICP RIE) machine was employed to develop and control the specific shape, size, and density of the fabricated black silicon, which was then subjected to testing. The efficiency of the black silicon photovoltaic cell was 23.3%.

Microstructure, mechanical properties, and tribological behavior of Al 2 O 3 -13wt.% TiO 2 (AT13)-based coatings with different TiN x ( x  = 0.3 or 1) contents were investigated. Herein, TiN x complexes were generated from Ti powder via reactive plasma spraying. The morphology and microstructure of AT13-TiN x multiphase ceramic coatings were analyzed by scanning electron microscopy, energy-dispersive spectroscopy, and x-ray diffraction. The presence of TiN x complexes improved microhardness of coatings. At the same time, excessive TiN x content led to uneven microhardness distribution in coatings. Moreover, with the increase in TiN x concentration, wear mechanisms of coatings changed from adhesive and abrasive wear (coating A) or abrasive wear with lubricating phase (coating D) to severe brittle fracture and abrasive wear (coating E). Besides, the coefficient of friction (COF) of coating D reached its lowest value. This was because TiO 2 and TiN 0.3 with the smallest hardness were predominant in the coating, playing the role of lubricating phases in friction process. As a result, the pinning effect of hard TiN particles prevented plastic deformation of the coating, thus reducing COF and wear quality loss of coating D. In turn, excessive TiN x particles led to the formation of uneven coating (coating F), in which stress concentration during friction testing increased and abrasive wear was aggravated, causing an increase in COF. At low friction speed (100 rpm), wear mechanism of AT13-TiN x composite coating remained unchanged, and COF reached its maximum. At high friction speed (300 rpm), wear mechanism was transformed into adhesive wear and oxidation wear, and COF achieved its lowest value. At last, under the condition of low load (5 N), the wear mass loss of AT13-TiN x composite coating was the minimum, but COF increased.

This work presents a comparative study of TiSiC and TiSiCN composite coatings deposited on stainless steel by reactive plasma spraying using mechanically activated powders. Microstructure, phase composition, and hardness were assessed by SEM/EDS, XRD, and Vickers indentation, while corrosion, erosion, and high-temperature tribological behavior were systematically evaluated. The TiCN + SiC + Si system forms a stable TiCxN1−x solid solution with amorphous Si3N4 grain-boundary phases, leading to densification and enhanced chemical stability. Compared with TiSiC, TiSiCN coatings exhibit higher hardness (2599 N/mm2, ≈324 HV), lower erosion loss (<1 mg), and stable friction coefficients (0.45–0.50 at 600 °C) due to protective oxide/nitride tribofilms. Electrochemical tests in 3.5 wt.% NaCl show a >6-fold reduction in corrosion rate (from 0.0506 to 0.008 mm·year−1) relative to bare steel. Overall, TiSiCN coatings deposited at 500–600 A provide an optimal balance of hardness, wear, and corrosion resistance, indicating strong potential for gas-turbine and power-generation components operating in aggressive environments.

Two-hierarchical nanostructures, characterized by two distinct configurations along the height direction, exhibit immense potential for applications in various fields due to their significantly enhanced controllable degree compared to single-order structures. However, due to the limitations imposed by planar technology, the realization of two-hierarchical nanostructures encounters huge challenges. In this work, we developed a one-step etching method based on inductively coupled plasma reactive ion etching for two-hierarchical nanostructures. Thanks to the shrinking effect of the Cr mask and the generation of a passivation layer during etching, the target materials experienced two different states from vertical etching to shrink etching. Consequently, the achieved two-hierarchical nanostructure configuration features a cross-section of an upper triangle and a lower rectangle, showing higher controllable degrees compared to the one-order ones. Both the mask pattern and etching parameters play crucial roles, by which two-hierarchical structures with diversiform shapes can be constructed controllably. This method for two-hierarchical nanostructures offers advantages including excellent control over structural properties, high processing efficiency, uniformity across large areas, and universality in materials. This developed strategy not only presents a simple and rapid nanofabrication platform for realizing optoelectronic devices, but also provides innovative ideas for designing the next generation of high-performance devices.