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In this paper, we report the influence of thermal annealing on structural, electrical properties V 2 O 5 thin films and their application of SBD’s. V 2 O 5 thin films were prepared using glass substrate by sol gel spin coating technique. Films were annealed at different temperatures such as 300 °C, 400 °C and 500 °C. The prepared films were introduced as an interfacial layer between metal and semiconductor interface. V 2 O 5 films exhibit single phase tetragonal structure and surface morphology interestingly, it was changed into nanorod-like structure at higher annealing temperature which was observed through field emission scanning electron microscopy. Atomic force microscopy reveals the surface roughness and the mentioned roughness is increasing due to the increase of annealing temperature. The elemental composition was confirmed by energy dispersive X-ray spectrum. From UV–Vis absorption spectroscopy results revealed that the band gap shows a decreasing trend on increasing the annealing temperature. Besides, we analyzed the influence of high quality vanadium pentoxide (V 2 O 5 ) thin films prepared at different annealed temperatures and act as an interfacial layer between metal and semiconductor in the fabrication of Schottky diode. V 2 O 5 films depicts high electrical conductivity (σ dc ) of 0.945 (S cm −1 ) with activation energy of 0.0747 eV (E a ) as a function of temperature. The MIS structured Cu/V 2 O 5 /n-Si based SBD’s diode performance was analyzed for different temperatures ranging from 30 to 150 °C. V 2 O 5 thin-film act as an interfacial layer on Cu/V 2 O 5 /n-Si Schottky diode was successfully explained by the thermionic emission theory.

Monoclinic WO 3 -nanoplate arrays have been effectively deposited via simple jet nebulizer spray pyrolysis technique at an optimized substrate temperature of 400 °C. These WO 3 -nanoplate arrays were used as an insulating layer in the metal–insulator–semiconductor (MIS) structure based Schottky barrier diodes. The effect of WO 3  mol concentration during the deposition process was systematically interpreted with respect to the structural, morphological, optical and electrical properties of WO 3 -nanoplate array films. XRD pattern exposed the polycrystalline nature of the prepared films with a monoclinic phase. At higher concentration of 0.25 M WO 3 -nanoplates were firmly interconnected together and has been analyzed by a FE-SEM. From UV–Vis spectroscopy, the band gap values of the WO 3 were found to vary from 3.2 to 3.4 eV with mole concentrations. DC electrical study recorded a steep increase in the electrical conductivity for the film prepared with 0.2 M of WO 3 . Notably, all the diodes exhibited positive photoresponse under illumination. Particularly, the MIS diode fabricated with 0.2 M revealed higher photoresponsivity and sensitivity of 960.85% and 33.40 mA W −1 respectively.

Schottky diode-based temperature sensors are the most common commercially available temperature sensors, and they are attracting increasing interest owing to their higher Schottky barrier height compared to their silicon counterparts. Therefore, this paper presents a comparison of the thermal sensitivity variation trend in temperature sensors, based on dual 4H-SiC junction barrier Schottky (JBS) diodes and Schottky barrier diodes (SBDs). The forward bias current–voltage characteristics were acquired by sweeping the DC bias voltage from 0 to 3 V. The dual JBS sensor exhibited a higher peak sensitivity (4.32 mV/K) than the sensitivity exhibited by the SBD sensor (2.85 mV/K), at temperatures ranging from 298 to 573 K. The JBS sensor exhibited a higher ideality factor and barrier height owing to the p–n junction in JBS devices. The developed sensor showed good repeatability, maintaining a stable output over several cycles of measurements on different days. It is worth noting that the ideality factor and barrier height influenced the forward biased voltage, leading to a higher sensitivity for the JBS device compared to the SBD device. This allows the JBS device to be suitably integrated with SiC power management and control circuitry to create a sensing module capable of working at high temperatures.

Herein, we report on the post-annealing temperature effect on the transport behavior of p-CuO/Al Schottky barrier diodes. In addition, the transformation of phase from Cu 4 O 3 to CuO phase was studied. Copper oxide thin films were grown on soda lime glass substrates, and post-annealing temperature's influence on the films’ structural, chemical, morphological, and electrical characteristics was comprehensively examined. X-ray diffraction study revealed the development of polycrystalline tenorite phase (CuO) on annealing. Raman analysis also confirmed the formation of the tenorite phase (CuO) at higher annealing temperatures (400 °C and 500 °C). XPS study revealed the occurrence of the Cu 4 O 3 phase for room temperature deposited sample and CuO phase at the higher annealing temperature. Using current–voltage analysis, the Chueng model, and the thermoelectric emission model, the Schottky behavior between the metal and semiconductor were investigated. The fabricated diode showed a rectification ratio of 10 3 at ± 2 V, with the barrier height ranging from 0.84 to 1.12 eV due to different annealing treatments. The attributes of the power law were employed to elucidate space charge-limited conduction and the process of tunneling across the density of interface traps in p-CuO/Al Schottky diodes. This study provides valuable insights into the behavior of the p-CuO/Al Schottky junction, enhancing our understanding of its characteristics.

In this research, the significant role of 1,4,5,8-naphthalenetetracarboxylic-dianhydride, NTCDA, thin film on the Al/p-Si barrier under different temperatures is investigated. The structural and topographical properties of the thermally evaporated NTCDA thin film are investigated using a transmission electron microscope, TEM, and atomic force microscope, AFM, respectively, and elucidated that the fabricated films have a smooth nanocrystalline nature with an average crystallite size about 89 nm and average roughness about 3.15 nm. Furthermore, the current–voltage ( I – V ) characteristics of Al/NTCDA/p-Si/Al device are studied under dark conditions at different temperatures (313–383 K). The Schottky diode electronic parameters such as ideality factor, n , barrier height, Φ B , and reverse saturation current, I s , are calculated at each temperature. A clear increment of Φ B from 0.74 to 0.88 eV accompanied by a clear decrement of n values from 5.83 to 4.99 under increasing temperature (313–383) K is noticed. Due to the inhomogeneity of barrier height, the Gaussian distribution of Schottky barrier height is employed to estimate the mean value of barrier height and standard deviation and found to be 1.5 eV and 20 mV, respectively. The modified Richardson plot is used to estimate the modified Richardson constant and found to be 35.2 A cm −2 K −2 which is close to the known value of p-Si. Moreover, the conduction mechanism in forward and reverse biasing is explained in details. The modified Norde's function is employed for estimating the series resistance, R s , and barrier height of the fabricated device at each temperature, where the values of R s showed a decrement behavior from 3.564 to 1.165 kΩ upon increasing the temperature. The process of inserting NTCDA between electrode and p-Si influenced the distribution of interface states for MIS Schottky diode at different temperatures and is explained as a passivation process of the device's interface states.

Highly oriented ultrathin MoO3 nanoplate thin films have been synthesized on a large scale using a low-cost spray pyrolysis technique at different substrate temperatures (350°C, 400°C, 450°C, and 500°C). High-quality single-phase orthorhombic α-MoO3 nanoplate film was observed by x-ray diffraction analysis. The surface morphology of the coated films was analyzed by field-emission scanning electron microscopy, revealing two different surface structures, viz. nanorods and nanoplates. Under atomic force microscopy, the surface roughness of the films was found to decrease with increasing substrate temperature. The optical properties of the α-MoO3 nanoplate thin films were analyzed by ultraviolet–visible and photoluminescence spectroscopy. The optical bandgap varied from 2.8 eV to 3.2 eV, recording a red-shift in the emission, with increasing substrate temperature from 350°C to 500°C. The electrical conductivity was also found to increase linearly with increasing substrate temperature. Various photodiode parameters such as ideality factor (n), barrier hight (ФB), photo sensitivity (PS), resistivity (R), quantum efficiency (QE) and detectivity (D*) were calculated for different light intensities from 0 mW/cm2 to 120 mW/cm2 based on the I–V characteristic. The diode fabricated at 500°C showed a remarkably high photosensitivity and specific detectivity of 610.51% and 1.149 × 1011 Jones when measured at 120 mW/cm2.

This paper presents a systematic study of Al0.23Ga0.77N/GaN/AlxGa1−xN double-heterojunction high-electron-mobility transistors (DH-HEMTs) with a boron-doped P+ GaN cap layer under the gate. The boron-doped GaN cap layer shows great potential to form a high-bandgap Schottky gate in DH-HEMT devices to increase the resistivity of the GaN cap with excellent structural characteristics. Thus, the polarization-induced field in the GaN cap layer can be used to raise the conductive band of the device in the normally OFF operation. In this paper, these AlGaN/GaN power-switching devices with freewheeling Schottky barrier diodes are examined in their working states. In comparison with conventional HEMT power devices, the HEMT with a B-doped GaN cap offers the lowest switching charges, area-specific ON-state resistance, and energy losses. Therefore, this study clearly shows the advantage of GaN transistors for power electronics applications.

Vanadium pentoxide (V 2 O 5 ) thin films were grown by radio frequency magnetron sputtering on n-type silicon (n-Si) and glass substrates at 500 °C. V 2 O 5 thin films were deposited with various thicknesses (100–400 nm). The effect of film thickness on the physical properties of the films was systematically investigated by different characterization techniques. The structural, morphological, optical and carrier properties of the samples were characterized using various techniques. All of the obtained films were found to have an orthorhombic structure and preferred orientation along (001) plane. The band gap energy values of the films were found to be in the range from 2.23 to 2.50 eV, and their optical transmittance were in the range from 20 to 80% in the visible region. With increasing film thickness, it was seen that the surface roughness increased and the resistivity decreased. Then, electrical parameters of the Ti/V 2 O 5 Schottky diode fabricated on n-Si substrate by the sputtering system were presented at the room temperature. The obtained experimental results showed that the deposited V 2 O 5 films can be used in electro-optical applications.

Au/n-Si metal/semiconductor (MS) Schottky barrier diodes with and without (Ag2S-PVA) interlayer were prepared by the ultrasound-assisted method and their electric and dielectric properties were examined by using current–voltage (I–V) and capacitance–voltage (C–V) measuring devices. The structural, optical and morphological characteristics of the (Ag2S-PVA) were studied by x-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–Visible spectroscopy. The observed peaks in the XRD pattern are related to the α-phase of silver sulfide. The UV–Visible spectrum of (Ag2S-PVA) shows the quantum confinement and SEM image proves the grain size in nano-scale. The ideality factor (n) and barrier height (BH) at zero bias (ΦB0(I–V)) were acquired from the I–V data. On the other hand; Fermi energy (EF), donor concentration atoms (ND), and BH (ΦB(C–V)) values were obtained from the reverse bias C–V data. The voltage-dependent resistance profile (Ln(Ri)–V) was obtained by applying Ohm’s law and also by the Nicollian–Brews methods. Also, considering the voltage-dependent n and BH, Nss–(Ec–Ess) profile was acquired from the forward biases I–V characteristics. Depending on high, intermediate and low biases ln(I)–Ln(V) curves have three linear regions with distinct slopes for MS and MPS structures. The predominant current-transport mechanisms were obtained in related regions via trap-charge limited current and space-charge limited current, respectively. These outcomes indicate that the (Ag2S-PVA) interlayer enhanced the performance of the diode considerably in terms of high rectifier rate (RR), shunt resistance (Rsh), and low surface states (Nss) and series resistance (Rs). Thus, the (Ag2S-PVA) interlayer can be used in MS type diode instead of a traditional insulator layer.

Barrier height at the interface between metal and polar Al x Ga 1− x N (0 ≤  x  ≤ 1) epitaxial films was investigated using X-ray photoelectron spectroscopy and interface induced gap states (IFIGS) model. The opposite nature of polarization charge yields a significantly lower barrier height in N-polar Al x Ga 1− x N surface compared to the III-polar counterpart. Accordingly, IFIGS model indicate that III-polar Al x Ga 1− x N films are advantageous for Schottky contact formation for x  < 0.3, whereas N-polar films offer a significantly lower knee voltage and ON-state resistance than the III-polar counterpart for x  ≥ 0.3. Furthermore, N-polar Al x Ga 1− x N films are expected to offer a lower ohmic contact resistance than the III-polar counterpart for all values of x . The analysis performed in this work highlight the importance of N-polar Al-rich Al x Ga 1− x N epitaxial films for extending the figures of merit in future ultra-wide band gap semiconductor Schottky diodes.