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50 years in the semiconductor underground
This book was derived from a talk the author gave at the International Conference on Advanced Nanodevices and Nanotechnology in Hawaii. The book presents the author's personal views about science, engineering, and life, illustrated by a number of stories about various events, some of which have shaped the author's life.
Book
Microstructure Optimization of Thermoelectric τsub.1-Alsub.2Fesub.3Sisub.3 via Graded Temperature Heat Treatments
To investigate the relationship between microstructure, chemical composition, and thermoelectric properties, we have applied graded temperature heat treatments to recently developed τ[sub.1]-Al[sub.2]Fe[sub.3]Si[sub.3]-based thermoelectric (FAST) materials formed by a peritectic reaction. We investigated microstructures, chemical compositions, and Seebeck coefficients as continuous functions of heat treatment temperature. The τ1 phase can become p- and n-type semiconductors without doping by changing the Al/Si ratio. The Seebeck coefficient was maximized, exceeding |S| > 140 μVK[sup.−1] for both p- and n-type materials, by heat treatment at 1173 K for 24 h through microstructural optimization. These results show that combining the graded temperature heat treatments and spatial mapping measurements of thermoelectric properties gives effective routes to determine the suitable heat treatment temperature for materials with multiphase microstructure.
Journal Article
Load-Dependent Nanoscale Material Removal Behaviors of β-Gasub.2Osub.3 Surface in Single-Point Diamond Scratching: From Plastic Plowing to Brittle Fracture
This study investigates nanoscale material removal behavior and its correlation with subsurface damage of (100)-oriented β-Ga[sub.2]O[sub.3] subjected to single-point diamond scratching across a range of normal loads. Using multi-scale characterizations, we elucidate the load-dependent transition from elastic deformation to plasticity-dominated removal and, ultimately, to brittle fracture. Under low-load conditions, β-Ga[sub.2]O[sub.3] exhibits a fully plasticity-dominated removal mechanism, characterized by smooth groove formation with surface pile-up and a crack-free subsurface containing only dislocations and stacking faults, suggesting that ductile-regime processing is achievable under appropriate mechanical conditions. As the normal load increases, the material enters a ductile–brittle transition regime, where plastic flow coexists with the initiation of micro shear cracks, accompanied by unstable fluctuations in the friction coefficient. Under high-load conditions, extensive brittle fracture becomes dominant, characterized by severe subsurface mixed cracking and large-scale material spalling. This research contributes to a deeper understanding of the machinability of β-Ga[sub.2]O[sub.3] materials with high hardness and brittleness in ultraprecision surface processing.
Journal Article
Semiconductor manufacturing handbook
After a difficult period, the semiconductor manufacturing industry is growing again, with significant prospects in the world market. This concise reference brings the full range of semiconductor fabrication technologies and methods to the engineer's fingertips.
Book
Enhanced UVC Responsivity of Heteroepitaxial α-Gasub.2Osub.3 Photodetector with Ultra-Thin HfOsub.2 Interlayer
In this study, the influence of HfO[sub.2] interlayer thickness on the performance of heteroepitaxial α-Ga[sub.2]O[sub.3] layer-based metal–insulator–semiconductor–insulator–metal (MISIM) ultraviolet photodetectors is examined. A thin HfO[sub.2] interlayer enhances the interface quality and reduces the density of interface traps, thereby improving the performance of UVC photodetectors. The fabricated device with a 1 nm HfO[sub.2] interlayer exhibited a significantly reduced dark current and higher photocurrent than a conventional metal–semiconductor–metal (MSM). Specifically, the 1 nm HfO[sub.2] MISIM device demonstrated a photocurrent of 2.3 μA and a dark current of 6.61 pA at 20 V, whereas the MSM device exhibited a photocurrent of 1.1 μA and a dark current of 73.3 pA. Furthermore, the photodetector performance was comprehensively evaluated in terms of responsivity, response speed, and high-temperature operation. These results suggest that the proposed ultra-thin HfO[sub.2] interlayer is an effective strategy for enhancing the performance of α-Ga[sub.2]O[sub.3]-based UVC photodetectors by simultaneously suppressing dark currents and increasing photocurrents and ultimately demonstrate its potential for stable operation under extreme environmental conditions.
Journal Article
Moore's law : the life of Gordon Moore, Silicon Valley's quiet revolutionary
\"A chemist and founder of Intel, Gordon Moore played a major role in revolutionizing technology and shaping the growth and reach of Silicon Valley. The story of the man--an inventor and businessman whose influence on the world is at least as great as Thomas Edison's, Henry Ford's, or Bill Gates's--has never before been told ... [In this book], Arnold Thackray sheds light on Gordon Moore, gives context to the technologies and world of high-tech power he helped to develop, and provides [an] ... introduction to the history and science of the silicon transistor, the technological building block that has transformed commercial business, defense strategies, and the everyday lives of individuals around the globe\"-- Provided by publisher.
Book
A Self-Powered, High-Performance Photodetector Based on a g-Csub.3Nsub.4/Textured Si n-n Heterojunction
g-C[sub.3]N[sub.4] has emerged as a promising metal-free semiconductor for optoelectronic applications due to its suitable bandgap, excellent stability, and low cost. However, enhancing its photoresponse efficiency in practical devices remains a challenge. In this work, a high-performance self-powered photodetector was developed using a g-C[sub.3]N[sub.4]/textured Si n-n heterojunction fabricated via a simple solution process. The device exhibits excellent diode characteristics with a rectification ratio of 4.9 × 10[sup.2] and an ideality factor of 1.41. It achieves broadband detection from 405 to 980 nm, a high responsivity of 3.2 A/W, a specific detectivity of 1.9 × 10[sup.14] Jones, and fast response speeds of 44/36 ms at 650 nm under zero bias. Significantly, the textured Si-based device shows approximately tenfold higher performance than its planar Si counterpart, owing to enhanced light absorption from the textured surface. The combination of excellent photoresponse and simple fabrication makes the g-C[sub.3]N[sub.4]/textured Si n-n heterojunction a promising candidate for low-cost, high-performance optoelectronic applications.
Journal Article