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Large‐area single‐crystalline thin films of n‐type organic semiconductors (OSCs) fabricated via solution‐processed techniques are urgently demanded for high‐end electronics. However, the lack of molecular designs that concomitantly offer excellent charge‐carrier transport, solution‐processability, and chemical/thermal robustness for n‐type OSCs limits the understanding of fundamental charge‐transport properties and impedes the realization of large‐area electronics. The benzo[de]isoquinolino[1,8‐gh]quinolinetetracarboxylic diimide (BQQDI) π‐electron system with phenethyl substituents (PhC2–BQQDI) demonstrates high electron mobility and robustness but its strong aggregation results in unsatisfactory solubility and solution‐processability. In this work, an asymmetric molecular design approach is reported that harnesses the favorable charge transport of PhC2–BQQDI, while introducing alkyl chains to improve the solubility and solution‐processability. An effective synthetic strategy is developed to obtain the target asymmetric BQQDI (PhC2–BQQDI–Cn). Interestingly, linear alkyl chains of PhC2–BQQDI–Cn (n = 5–7) exhibit an unusual molecular mimicry geometry with a gauche conformation and resilience to dynamic disorders. Asymmetric PhC2–BQQDI–C5 demonstrates excellent electron mobility and centimeter‐scale continuous single‐crystalline thin films, which are two orders of magnitude larger than that of PhC2–BQQDI, allowing for the investigation of electron transport anisotropy and applicable electronics. A series of asymmetric BQQDI (PhC2–BQQDI–Cn, n = 5–7) n‐type organic semiconductors simultaneously showing excellent charge transport and solution‐processability are reported. Interestingly, their single‐crystal structures exhibit an unusual molecular mimicry geometry that provides resilience to dynamic disorders. Asymmetric PhC2–BQQDI–Cn with the pentyl chain demonstrates high electron mobility in centimeter‐scale single‐crystalline thin films.

In the design of optical devices and components, geometric structures and optical properties of materials, such as absorption, refraction, reflection, diffraction, scattering, and trapping, have been utilized. Finding the ideal material with certain optical and geometric characteristics is essential for a customized application. Herein, unoxidizable achromatic copper films (ACFs) are fabricated on Al2O3 substrates utilizing an atomic sputtering epitaxy apparatus. ACFs are made up of two regions vertically: a comparatively flat layer region and a 3D porous nanostructured region on top of the flat region. The measured specular reflectance displays low‐pass filter behavior with a sharp cutoff frequency in the infrared spectrum. Furthermore, the measured diffusive reflectance spectra show light‐trapping behavior in the spectral region above the cutoff frequency, where there are no known absorption mechanisms, such as phonons and interband transitions. A focused ion beam scanning electron microscope is utilized to study the thin film's nanostructured region through 3D tomographic analysis in order to comprehend the phenomena that are observed. This work will shed fresh light on the design and optimization of optical filters and light‐trapping employing porous nanostructured metallic thin films. This study explores the intriguing optical phenomena of 3D porous nanostructures in single‐crystalline copper films. Measured specular reflectance shows low‐pass filter behavior in the infrared region. Low‐pass filtering is due to light scattering from rough surfaces. Furthermore, measured diffusive reflectance spectra demonstrate light‐trapping behavior caused by the cavities formed in the 3D nanostructure, closely linked to its high emissivity.

This manuscript summarizes recent results on the development of composite luminescent materials based on the single-crystalline films and single crystals of simple and mixed garnet compounds obtained by the liquid-phase epitaxy growth method. Such composite materials can be applied as scintillating and thermoluminescent (TL) detectors for radiation monitoring of mixed ionization fluxes, as well as scintillation screens in the microimaging techniques. The film and crystal parts of composite detectors were fabricated from efficient scintillation/TL materials based on Ce3+-, Pr3+-, and Sc3+-doped Lu3Al5O12 garnets, as well as Ce3+-doped Gd3−xAxAl5−yGayO12 mixed garnets, where A = Lu or Tb; x = 0–1; y = 2–3 with significantly different scintillation decay or positions of the main peaks in their TL glow curves. This work also summarizes the results of optical study of films, crystals, and epitaxial structures of these garnet compounds using absorption, cathodoluminescence, and photoluminescence. The scintillation and TL properties of the developed materials under α- and β-particles and γ-quanta excitations were studied as well. The most efficient variants of the composite scintillation and TL detectors for monitoring of composition of mixed beams of ionizing radiation were selected based on the results of this complex study.

This work was dedicated to the development of novel types of composite phosphor converters of white LED, based on the epitaxial structures containing Y3Al5O12:Ce (YAG:Ce) and Tb3Al5O12:Ce (TbAG:Ce) single crystalline films, steeply grown, using the liquid-phase epitaxy method, onto LuAG:Ce single crystal substrates. The influence of Ce3+ concentration in the LuAG:Ce substrate, as well as the thickness of the subsequent YAG:Ce and TbAG:Ce films, on the luminescence and photoconversion properties of the three-layered composite converters were investigated. Compared to its traditional YAG:Ce counterpart, the developed composite converter demonstrates broadened emission bands, due to the compensation of the cyan–green dip by the additional LuAG:Ce substrate luminescence, along with yellow–orange luminescence from the YAG:Ce and TbAG:Ce films. Such a combination of emission bands from various crystalline garnet compounds allows the production of a wide emission spectrum of WLEDs. In turn, the variation in the thickness and activator concentration in each part of the composite converter allows the production of almost any shade from green to orange emission on the chromaticity diagram.

Single-crystalline films (SCFs) of the LuAG: Ce garnet grown using the liquid-phase epitaxy method onto YAG single-crystal (SC) substrates were investigated for possible applications as composite thermoluminescent (TL) detectors. Such detectors may help to register the different components of ionizing radiation fields with various penetration depths, e.g., heavy charged particles and gamma or beta rays. It was found that the TL signal of LuAG: Ce SCF sufficiently differs from that of the YAG substrate concerning both the temperature and wavelength of emissions. Furthermore, even by analyzing TL glow curves, it was possible to distinguish the difference between weakly and deeply penetrating types of radiation. Within a test involving the exposure of detectors with the mixed alpha/beta radiations, the doses of both components were determined with an accuracy of a few percent.

This work is dedicated to the development of new types of composite thermoluminescent detectors based on the single crystalline films of Ce-doped GdAlO3 perovskite and Mn-doped YAlO3 and (Lu0.8Y0.2)AlO3:Mn perovskites as well as Ce and Pr-doped YAlO3 single crystal substrates. These detectors were obtained using the Liquid Phase Epitaxy growth method from the melt solution based on the PbO-B2O3 fluxes. Such composite detectors can by applied for the simultaneous registration of different components of mixed ionization fluxes using the differences between the thermoluminescent glow curves, recorded from the film and crystal parts of epitaxial structures. For creation of the new composite detectors, we considered using, for the film and crystal components of epitaxial structures (i) the different perovskite matrixes doped with the same type of activator or (ii) the same perovskite host with various types of activators. The thermoluminescent properties of the different types of epitaxial structures based on the abovementioned films and crystal substrates were examined in the conditions of β-particles and X-ray excitation with aim of determination of the optimal combination of perovskites for composite detectors. It was shown that, among the structures with all the studied compositions, the best properties for the simultaneous thermoluminescent detection of α- and X-rays were the GdAlO3:Ce film/YAlO3:Ce crystal epitaxial structure.

In this work, three sets of single crystalline films (SCF) of Al2O3:Mn sapphire, YAlO3:Mn perovskite (YAP:Mn), and Y3Al5O12:Mn garnet (YAG:Mn), with a nominal Mn content of 0.1%, 1%, and 10 atomic percent (at.%) in the melt-solutions, were crystallized by the liquid phase epitaxy (LPE) method onto sapphire, YAP and YAG substrates, respectively. We have also calculated the average segregation coefficient of Mn ions for Al2O3:Mn, YAP:Mn and YAG:Mn SCFs with Mn content in the melt-solution in the 0.1–10% concentration range, which was equal to 0.1, 0.14 and 0.2, respectively. The main goal of the conducted research was the spectroscopic determination of the preferable valence states of manganese ions which were realized in the SCFs of sapphire, perovskite and garnet depending on the Mn content. For this purpose, the absorption, cathodoluminescence (CL), photoluminescence (PL) emission/excitation spectra and PL decay kinetics of Al2O3:Mn, YAP:Mn and YAG:Mn SCFs with different Mn concentrations were studied. Based on the CL and PL spectra, we showed that Mn ions, depending on the Mn content in the melt-solution, are incorporated in Al2O3:Mn, YAP:Mn and YAG:Mn SCFs in the different charged states and are located in the different crystallographic positions of the mentioned oxide lattices. We have observed the presence of the luminescence of Mn4+, Mn3+ and Mn2+ valence states of manganese ions in CL spectra in all SCFs under study with 0.1 and 1% Mn concentrations. Namely, the Mn4+ ion valence state with the main sharp emission bands peaked at 642 and 672 nm, related to the 2E → 4A2 transitions, was found in the luminescence spectra of the all studied Al2O3:Mn SCFs. The luminescence of the Mn2+ valence state was found only in YAP:Mn and YAG:Mn SCFs, grown from melt solution with 1% Mn content, in the emission bands peaked at 525 and 560 nm, respectively, related to the 4T1 → 6A1 transitions. The PL and CL spectra of YAP:Mn and YAG:Mn SCFs with the Mn content in the 0.1–1% range show that the main valence state of manganese ions in these films is Mn3+ with the main emission bands peaking at 655 and 608 nm, respectively, related to the 1T2 → 5E transitions. Meanwhile, higher than 1% Mn content in the melt solution causes a strong concentration quenching of luminescence of all Mn centers in Al2O3:Mn, YAP:Mn and YAG:Mn SCFs.

The paper addresses the development of composite scintillation materials providing simultaneous real-time monitoring of different types of ionizing radiation (α-, β-particles, γ-rays) in mixed fluxes of particles and quanta. The detectors are based on composite heavy oxide scintillators consisting of a thin single-crystalline film and a bulk single-crystal substrate. The film and substrate respond to certain types of ionizing particles, forming together an all-in-one composite scintillator capable of distinguishing the type of radiation through the different time characteristics of the scintillation response. Here, we report the structure, composition, and scintillation properties under different ionizing radiations of (Lu,Gd,Tb)3(Al,Ga)5O12:Ce films deposited using liquid phase epitaxy onto Gd3(Al1−xGax)5O12:Ce (GAGG:Ce) single-crystal substrates. The most promising compositions with the highest light yields and the largest differences in scintillation decay timing under irradiation with α-, β-particles, and γ-rays were selected. Such detectors are promising for environmental security purposes, medical tomography, and other radiation detection applications.

The investigation of the structural, luminescent and photoconversion properties (color coordinates, correlated color temperature, color rendering index and luminous efficacy) of the single-crystalline films of Ce3+-doped Tb1.5Gd1.5Al5O12:Ce mixed garnet with variable film thickness was performed in this work. These film converters were grown on undoped Y3Al5O12 substrates using the liquid phase epitaxy technique. When combined directly with blue LEDs that were commercially available in the market, the developed garnet film converters were responsible for producing white light. The trend line on the color coordinate diagram was obtained for the first time for the Tb1.5Gd1.5Al5O12:Ce converters with the systematic variation in film thickness in the range of 45–82 µm. Under 464 nm blue LED excitation, the investigated converters with a thickness of 55 µm resulted in an ideal white color.

The ultra-wide bandgap (~6.2 eV), thermal stability and radiation tolerance of AlN make it an ideal choice for preparation of high-performance far-ultraviolet photodetectors (FUV PDs). However, the challenge of epitaxial crack-free AlN single-crystalline films (SCFs) on GaN templates with low defect density has limited its practical applications in vertical devices. Here, a novel preparation strategy of high-quality AlN films was proposed via the metal organic chemical vapor deposition (MOCVD) technique. Cross-sectional transmission electron microscopy (TEM) studies clearly indicate that sharp, crack-free AlN films in single-crystal configurations were achieved. We also constructed a p-graphene/i-AlN/n-GaN photovoltaic FUV PD with excellent spectral selectivity for the FUV/UV-C rejection ratio of >103, a sharp cutoff edge at 206 nm and a high responsivity of 25 mA/W. This work provides an important reference for device design of AlN materials for high-performance FUV PDs.