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The potential of dendrimers exhibiting thermally activated delayed fluorescence (TADF) as emitters in solution‐processed organic light‐emitting diodes (OLEDs) has to date not yet been realized. This in part is due to a poor understanding of the structure–property relationship in dendrimers where reports of detailed photophysical characterization and mechanism studies are lacking. In this report, using absorption and solvatochromic photoluminescence studies in solution, the origin and character of the lowest excited electronic states in dendrimers with multiple dendritic electron‐donating moieties connected to a central electron‐withdrawing core via a para‐ or a meta‐phenylene bridge is probed. Characterization of host‐free OLEDs reveals the superiority of meta‐linked dendrimers as compared to the already reported para‐analogue. Comparative temperature‐dependent time‐resolved solid‐state photoluminescence measurements and quantum chemical studies explore the effect of the substitution mode on the TADF properties and the reverse intersystem crossing (RISC) mechanism, respectively. For TADF dendrimers with similarly small ∆EST, it is observed that RISC can be enhanced by the regiochemistry of the donor dendrons due to control of the reorganization energies, which is a heretofore unexploited strategy that is distinct from the involvement of intermediate triplet states through a nonadiabatic (vibronic) coupling with the lowest singlet charge transfer state. A series of thermally activated delayed fluorescence (TADF) dendrimers is developed. The study reveals that the reorganization energies and thus the reverse intersystem crossing rate can be controlled by the regiochemistry of the donor dendrons. A two‐fold improved external quantum efficiency in solution‐processed organic light‐emitting diodes is demonstrated using meta‐connected versus a para‐connected TADF dendrimers as emitters.

This work presents a series of novel quinoidal organic semiconductors based on diselenophene‐dithioalkylthiophene (DSpDST) conjugated cores with various side‐chain lengths (‐thiohexyl, ‐thiodecyl, and ‐thiotetradecyl, designated DSpDSTQ‐6, DSpDSTQ‐10, and DSpDSTQ‐14, respectively). The purpose of this research is to develop solution‐processable organic semiconductors using dicyanomethylene end‐capped organic small molecules for organic field effect transistors (OFETs) application. The physical, electrochemical, and electrical properties of these new DSpDSTQs are systematically studied, along with their performance in OFETs and thin film morphologies. Additionally, the molecular structures of DSpDSTQ are determined through density functional theory (DFT) calculations and single‐crystal X‐ray diffraction analysis. The results reveal the presence of intramolecular S (alkyl)···Se (selenophene) interactions, which result in a planar SR‐containing DSpDSTQ core, thereby promoting extended π‐orbital interactions and efficient charge transport in the OFETs. Moreover, the influence of thioalkyl side chain length on surface morphologies and microstructures is investigated. Remarkably, the compound with the shortest thioalkyl chain, DSpDSTQ‐6, demonstrates ambipolar carrier transport with the highest electron and hole mobilities of 0.334 and 0.463 cm2 V−1 s−1, respectively. These findings highlight the excellence of ambipolar characteristics of solution‐processable OFETs based on DSpDSTQs even under ambient conditions. A series of novel quinoidal organic semiconductors based on diselenophene‐dithioalkylthiophene (DSpDST) conjugated cores with various side‐chain lengths are designed for solution‐processable organic field effect transistors (OFETs). Remarkably, the compound with the shortest thioalkyl chain, DSpDSTQ‐6, demonstrates ambipolar carrier transport with the highest electron and hole mobilities of 0.334 and 0.463 cm2 V−1 s−1, respectively.

Molybdenum disulfide (MoS2)/lead sulfide (PbS) heterostructures exhibit exceptional potential because of their strong light‐matter interactions and high carrier mobility. Critically, bandgap engineering can further optimize the light‐absorption range for next‐generation phototransistors. However, the bandgap engineering capability for MoS2/PbS heterojunctions formed by conventional transfer‐after‐chemical vapor deposition (CVD) fabrication is typically inherently restricted due to solely vertical interlayer coupling. Here, to realize wafer‐scale bandgap‐tunable MoS2/PbS phototransistors, we investigate the band structure of vertical and lateral MoS2/PbS heterojunctions via ab initio calculations and find that lateral heterojunctions in heterostructures dominate the bandgap tunability via tuning of the Type‐II band alignment. To achieve wafer‐scale uniformity, we investigated how plasma treatment modulates the thin‐film surface energy, and the results substantially improved fabrication scaling of MoS2/PbS heterojunctions from traditional micro‐scale level to an incredible 4‐inch wafer‐scale with near‐ideal yields (97%) and enabled bandgap tunability (from 1.24 to 0.61 eV). The resulting phototransistors exhibit a maximum responsivity of 88 A/W, specific detectivity of 4.77 ×  1012 Jones, and a typical on/off ratio of 3.16 ×  107. This work establishes a pathway for developing wafer‐scale bandgap‐tunable optoelectronics. This work advances bandgap‐tunable MoS2/PbS phototransistors by introducing lateral heterojunctions, which enable superior tunable bandgap (1.24–0.61 eV) via Type‐II alignment. Plasma‐enhanced solution processing ensures uniform 4‐inch wafer‐scale fabrication with 97% yield. The optimized devices achieve high responsivity (88 A/W), detectivity (4.77 × 1012 Jones), and on/off ratio (3.16 × 107), providing a pathway for scalable, tunable optoelectronics.

While organic photovoltaics are accessing specific application sectors taking advantage of their unique properties, it is important to identify as many differentiators as possible to expand the market penetration and consolidation of this technology. In this work, for the first time, the large‐scale fabrication of organic photovoltaic modules embedded into structural plastic parts through industrial injection molding is demonstrated. Thermoplastic polyurethane is chosen as the injected material to show that this additional processing step can yield flexible, lightweight photovoltaic modules with enhanced device robustness and virtually unchanged performance. The critical optomechanical and physico‐chemical material properties, as well as the plastic processing parameters to enable in‐mold plastic solar cells with improved performance and stability, are discussed and provided with perspective.

Titanium carbide (Ti3C2Tx) MXene has attracted significant attention due to its exceptional properties and versatile solution processibility. However, MXene dispersions are prone to various degradation processes, leading to the formation of byproducts that negatively affect its morphological, electrical, and mechanical properties. Through the years, several methods have been developed to mitigate MXene degradation; however, divergent viewpoints on the understanding of degradation mechanisms are prevalent, hindering the development of versatile strategies in producing environmentally stable MXene dispersions. This review provides a chronological analysis of the research efforts aimed at unraveling the underlying mechanisms of MXene degradation and highlights strategies for circumventing this process. This review discusses apparent inconsistencies in experimental findings and theoretical models. These discrepancies prompt further investigation for a clearer understanding of the degradation process in MXene. This narrative allows readers to follow the evolution of dominant theories and disputes and to ultimately stimulate further investigation, aiming for a better understanding of this process. It is anticipated that identifying the fundamental factors affecting the oxidation of MXene dispersions will enable their full‐scale processing into higher‐order structures and practical devices with greater longevity and long‐term performance. This review provides a chronological overview of the research efforts aimed at unraveling the underlying mechanisms of MXene oxidation. Additionally, it enables readers to track the evolution of primary theories and disagreements, contributing to the current state of ambiguity and discord within literature.

The recent progress on the liquid crystalline (LC) dispersion of two‐dimensional (2D) transition metal carbides (MXenes) has propelled this unique nanomaterial into a realm of high‐performance architectures, such as films and fibers. Additionally, compared to architectures made from typical non‐LC dispersions, those derived from LC MXene possess tunable ion transport routes and enhanced conductivity and physical properties, demonstrating great potential for a wide range of applications, such as electronic displays, smart glasses, and thermal camouflage devices. This review provides an overview of the progress achieved in the production and processing of LC MXenes, including critical discussions on satisfying the required conditions for LC formation. It also highlights how acquiring LC MXenes has broadened the current solution‐based manufacturing paradigm of MXene‐based architectures, resulting in unprecedented performances in their conventional applications (e.g., energy storage and strain sensing) and in their emerging uses (e.g., tribology). Opportunities for innovation and foreseen challenges are also discussed, offering future research directions on how to further benefit from the exciting potential of LC MXenes with the aim of promoting their widespread use in designing and manufacturing advanced materials and applications. This review provides an insight of the recent progress in liquid crystalline (LC) MXenes, highlighting the significant breakthroughs they unlocked towards enhanced solution processing of complex MXene architectures. Additionally, the article outlines prospective research pathways aimed at maximizing the promising capabilities of LC MXenes.

HighlightsThe PEDOT:PSS flexible electrodes with a unique CF3SO3H treatment exhibited high electrical characteristics and stability.An energy level tuning effect was induced to create a suitable work function.Flexible organic solar cells yielded a record-high efficiency of 16.61%, a high flexibility, and a good thermal stability.Nonfullerene organic solar cells (OSCs) have achieved breakthrough with pushing the efficiency exceeding 17%. While this shed light on OSC commercialization, high-performance flexible OSCs should be pursued through solution manufacturing. Herein, we report a solution-processed flexible OSC based on a transparent conducting PEDOT:PSS anode doped with trifluoromethanesulfonic acid (CF3SO3H). Through a low-concentration and low-temperature CF3SO3H doping, the conducting polymer anodes exhibited a main sheet resistance of 35 Ω sq−1 (minimum value: 32 Ω sq−1), a raised work function (≈ 5.0 eV), a superior wettability, and a high electrical stability. The high work function minimized the energy level mismatch among the anodes, hole-transporting layers and electron-donors of the active layers, thereby leading to an enhanced carrier extraction. The solution-processed flexible OSCs yielded a record-high efficiency of 16.41% (maximum value: 16.61%). Besides, the flexible OSCs afforded the 1000 cyclic bending tests at the radius of 1.5 mm and the long-time thermal treatments at 85 °C, demonstrating a high flexibility and a good thermal stability.

Solution methods remain the most popular means for the fabrication of hybrid halide perovskites. However, the solubility of hybrid perovskites has not yet been quantitively investigated. In this study, we present accurate solubility data for MAPbI3, FAPbI3, MAPbBr3 and FAPbBr3 in the two most widely used solvents, DMF and DMSO, and demonstrate huge differences in the solubility behavior depending on the solution compositions. By analyzing the donor numbers of the solvents and halide anions, we rationalize the differences in the solubility behavior of hybrid perovskites with various compositions, in order to take a step forward in the search for better processing conditions of hybrid perovskites for solar cells and optoelectronics.

Flexible sensing devices have attracted significant attention for various applications, such as medical devices, environmental monitoring, and healthcare. Numerous materials have been used to fabricate flexible sensing devices and improve their sensing performance in terms of their electrical and mechanical properties. Among the studied materials, conductive polymers are promising candidates for next-generation flexible, stretchable, and wearable electronic devices because of their outstanding characteristics, such as flexibility, light weight, and non-toxicity. Understanding the interesting properties of conductive polymers and the solution-based deposition processes and patterning technologies used for conductive polymer device fabrication is necessary to develop appropriate and highly effective flexible sensors. The present review provides scientific evidence for promising strategies for fabricating conductive polymer-based flexible sensors. Specifically, the outstanding nature of the structures, conductivity, and synthesis methods of some of the main conductive polymers are discussed. Furthermore, conventional and innovative technologies for preparing conductive polymer thin films in flexible sensors are identified and evaluated, as are the potential applications of these sensors in environmental and human health monitoring.

Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In₂O₃/In₂O₃:polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO₂. Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlOₓ gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human—computer interfacing.