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With the rapid commercialization of fifth generation (5G) technology in the world, the market demand for radio frequency (RF) filters continues to grow. Acoustic wave technology has been attracting great attention as one of the effective solutions for achieving high-performance RF filter operations while offering low cost and small device size. Compared with surface acoustic wave (SAW) resonators, bulk acoustic wave (BAW) resonators have more potential in fabricating high- quality RF filters because of their lower insertion loss and better selectivity in the middle and high frequency bands above 2.5 GHz. Here, we provide a comprehensive review about BAW resonator researches, including materials, structure designs, and characteristics. The basic principles and details of recently proposed BAW resonators are carefully investigated. The materials of poly-crystalline aluminum nitride (AlN), single crystal AlN, doped AlN, and electrode are also analyzed and compared. Common approaches to enhance the performance of BAW resonators, suppression of spurious mode, low temperature sensitivity, and tuning ability are introduced with discussions and suggestions for further improvement. Finally, by looking into the challenges of high frequency, wide bandwidth, miniaturization, and high power level, we provide clues to specific materials, structure designs, and RF integration technologies for BAW resonators.

Thin-film lithium niobate is an attractive material for RF acoustic devices because of its high electromechanical coupling. However, due to the large coupling and the high anisotropy, thin-film lithium niobate resonators are prone to accidental resonances called spurious modes. These modes compromise the frequency response of the resonators, limiting their use in filter and oscillator applications. In this work, we present a novel method of spurious mode suppression through a special edge treatment etch process. Two thin-film lithium niobate resonators were fabricated, one with smooth sidewalls and one with the edge treatment. It was found that the edge-treated resonators show a weaker spurious mode response. This is potentially a new way to mitigate spurious resonances, a major issue in lithium niobate Lamb wave devices.

Surface acoustic wave resonators are widely applied in electronics, communication, and other engineering fields. However, the spurious modes generally present in resonators can cause deterioration in device performance. Therefore, this paper proposes a hexagonal weighted structure to suppress them. With the construction of a finite element resonator model, the parameters of the interdigital transducer (IDT) and the area of the dummy finger weighting are determined. The spurious waves are confined within the dummy finger area, whereas the main mode is less affected by this structure. To verify the suppression effect of the simulation, resonators with conventional and hexagonal weighted structures are fabricated using the micro-electromechanical systems (MEMS) process. After the S-parameter test of the prepared resonators, the hexagonal weighted resonators achieve a high level of spurious mode suppression. Their properties are superior to those of the conventional structure, with a higher Q value (10,406), a higher minimum return loss (25.7 dB), and a lower ratio of peak sidelobe (19%). This work provides a feasible solution for the design of SAW resonators to suppress spurious modes.

Bulk Acoustic Wave (BAW) resonators are essential components in modern RF communication systems due to their high selectivity and quality factor. However, spurious resonances caused by Lamb wave mode propagation along the in-plane directions degrade the filter performance. Traditional Finite Element Method (FEM) simulations provide accurate modeling but are computationally expensive, especially for arbitrarily shaped resonators and solidly mounted resonators (SMRs), whose stack of materials is composed of many thin layers of different materials. To address this, we extend a previously published model (named the Quasi-3D model), which employs the Transmission Line Matrix (TLM) method, enabling efficient simulations of complex geometries with more precise meshing. The new approach allows us to simulate different geometries, and we will show several apodized geometries with the aim of minimizing the lateral modes. In addition, the proposed approach significantly reduces the computational cost while maintaining high accuracy, as validated by FEM comparisons and experimental measurements.

High frequency and large bandwidth are growing trends in communication radio-frequency devices. The LiNbO3 thin film material is expected to become the preferred piezoelectric material for high coupling resonators in the 5G frequency band due to its ultra-high piezoelectric coefficient and low loss characteristics. The main mode of laterally excited bulk acoustic wave resonators (XBAR) have an ultra-high sound velocity, which enables high-frequency applications. However, the interference of spurious modes is one of the main reasons hindering the widespread application of XBAR. In this paper, a Z-cut LiNbO3 thin film-based XBAR with arc-shaped electrodes is presented. We investigate the electric field distribution of the XBAR, while the irregular boundary of the arc-shaped electrodes affects the electric field between the existing interdigital transducers (IDTs). The mode shapes and impedance response of the XBAR with arc-shaped electrodes and the XBARs with traditional IDTs are compared in this work. The fabricated XBAR on a 350 nm Z-cut LiNbO3 thin film with arc-shaped electrodes operating at over 5 GHz achieves a high effective electromechanical coupling coefficient of 29.8% and the spurious modes are well suppressed. This work promotes an XBAR with an optimized electrode design to further achieve the desired performance.

The piezoelectric thin film composed of single-crystal lithium niobate (LiNbO3) exhibits a remarkably high electromechanical coupling coefficient and minimal intrinsic losses, making it an optimal material for fabricating bulk acoustic wave resonators. However, contemporary first-order antisymmetric (A1) Lamb mode resonators based on LiNbO3 thin films face specific challenges, such as inadequate mechanical stability, limited power capacity, and the presence of multiple spurious modes, which restrict their applicability in a broader context. In this paper, we present an innovative design for A1 Lamb mode resonators that incorporates a support-pillar structure. Integration of support pillars enables the dissipation of spurious wave energy to the substrate, effectively mitigating unwanted spurious modes. Additionally, this novel approach involves anchoring the piezoelectric thin film to a supportive framework, consequently enhancing mechanical stability while simultaneously improving the heat dissipation capabilities of the core.

Despite the dominance of bulk acoustic wave (BAW) filters in the high-frequency market due to their superior performance and compatible integration process, the advent of the 5G era brings up new challenges to meet the ever-growing demands on high-frequency and large bandwidth. Al1-xScxN piezoelectric films with high Sc concentration are particularly desirable to achieve an increased electromechanical coupling (Kt2) for BAW resonators and also a larger bandwidth for filters. In this paper, we designed and fabricated the Al1-xScxN-based BAW resonators with Sc concentrations as high as 30%. The symmetry of the resonance region, border frame structure and thickness ratio of the piezoelectric stack are thoroughly examined for lateral modes suppression and resonant performance optimization. Benefiting from the 30% Sc doping, the fabricated BAW resonators demonstrate a large effective electromechanical coupling (Keff2) of 17.8% at 4.75 GHz parallel resonant frequency. Moreover, the temperature coefficient of frequency (TCF) of the device is obtained as −22.9 ppm/°C, indicating reasonable temperature stability. Our results show that BAW resonators based on highly doped Al1-xScxN piezoelectric film have great potential for high-frequency and large bandwidth applications.

Lateral modes are responsible for the in-band spurious resonances that appear on BAW resonators, degrading the in-band filter response. In this work, a fast computational method based on the transmission line matrix (TLM) method is employed to model the lateral resonances of BAW resonators. Using the precomputed dispersion curves of Lamb waves and an equivalent characteristic impedance for the TE1 mode, a network of transmission lines is used to calculate the magnitude of field distributions on the electrodes. These characteristics are specific to the stack layer configuration. The model’s implementation is based on nodal Y matrices, from which particle displacement profiles are coupled to the electric domain via piezoelectric constitutive relations. Consequently, the input impedance of the resonator is obtained. The model exhibits strong agreement with FEM simulations of FBARs and SMRs, and with measurements of several SMRs. The proposed model can provide accurate predictions of resonator input impedance, which is around 200 times faster than conventional FEM.

This paper is concerned with the extractions of electromagnetic characteristic modes (CMs) for lossless dielectric bodies, for which spurious modes are prone to generate using the traditional definition of CMs based on the Poggio–Miller–Chang–Harrington–Wu–Tsai (PMCHWT) equations. It is found that the impedance matrix of PMCHWT equations cannot distinguish (i) which domain is the dielectric body and which domain is the background and (ii) from which domain the excitation source was applied. If the system is taken as a scattering problem, the spurious modes are solutions to a reverse media problem, i.e., exchanging the media of the dielectric body and the background space. However, if the system is taken as a radiation problem, no appropriate CMs that meet the specified boundary conditions are obtained. These phenomena indicate that CMs developed from scattering systems are not suitable for radiation systems. To clarify the issue, four cases with reverse media and with excitation sources in either domain are examined. The four cases are distinct in essence, but the PMCHWT equations cannot distinguish them. As a result, definitions of CMs for the four cases should be given along with their specific boundary conditions. Especially, the CMs for the radiation problems we consider here show that the excitation source inside the material object should be properly defined in order to be distinguished from scattering problems.

To cope with ubiquitous wireless connectivity and the increased and faster data delivery in 5G communication, surface acoustic wave (SAW) filters are progressively requiring wider bandwidths. Conventional bulk 15°YX-LiNbO3 substrates with a large coupling coefficient (K2) are attractive for the low-cost mass production of wideband SAW filters, but these generally suffer from spurious responses, limiting their practical application. In this work, a novel and simple SAW configuration is proposed that uses thickness-modulated interdigital transducer (IDT) structures to overcome the limitations set by spurious responses. Different from the conventional design where the thicknesses of the IDT electrodes in the series and parallel resonators generally kept the same, the proposed configuration adopts IDT electrodes of different thicknesses in the series and shunt resonators to suppress or remove unwanted spurious Rayleigh modes from the filter passband. Two different ultra-wideband SAW filter designs employing thickness-modulated IDTs were designed and fabricated to validate the effective suppression of spurious modes. The SAW filters experimentally featured spurious-free responses in the passband as well as a large 3 dB fractional bandwidth (FBW) in the 18.0% and 24.1% ranges and low insertion losses below 1 dB. This work can significantly broaden the range of applications for SAW devices and can open a pathway to commercialize ultra-wideband SAW filters in 5G communication systems.