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The colloidal photoluminescent quantum dots (QDs) of CdSe (core) and CdSe/ZnS (core/shell) were synthesized at different temperatures with different growth periods. Optical properties (i.e., UV/Vis spectra and photoluminescent emission spectra) of the resulting QDs were investigated. The shell-protected CdSe/ZnS QDs exhibited higher photoluminescent (PL) efficiency and stability than their corresponding CdSe core QDs. Ligand exchange with various thiol molecules was performed to replace the initial surface passivation ligands, that is, trioctylphosphine oxide (TOPO) and trioctylphosphine (TOP), and the optical properties of the surface-modified QDs were studied. The thiol ligand molecules in this study included 1,4-benzenedimethanethiol, 1,16-hexadecanedithiol, 1,11-undecanedithiol, biphenyl-4,4′-dithiol, 11-mercapto-1-undecanol, and 1,8-octanedithiol. After the thiol functionalization, the CdSe/ZnS QDs exhibited significantly enhanced PL efficiency and storage stability. Besides surface passivation effect, such enhanced performance of thiol-functionalized QDs could be due to cross-linked assembly formation of dimer/trimer clusters, in which QDs are linked by dithiol molecules. Furthermore, effects of ligand concentration, type of ligand, and heating on the thiol stabilization of QDs were also discussed.

Molecular passivation is a prominent approach for improving the performance and operation stability of halide perovskite solar cells (HPSCs). Herein, we reveal discernible effects of diammonium molecules with either an aryl or alkyl core onto Methylammonium-free perovskites. Piperazine dihydriodide (PZDI), characterized by an alkyl core-electron cloud-rich-NH terminal, proves effective in mitigating surface and bulk defects and modifying surface chemistry or interfacial energy band, ultimately leading to improved carrier extraction. Benefiting from superior PZDI passivation, the device achieves an impressive efficiency of 23.17% (area ~1 cm 2 ) (low open circuit voltage deficit ~0.327 V) along with superior operational stability. We achieve a certified efficiency of ~21.47% (area ~1.024 cm 2 ) for inverted HPSC. PZDI strengthens adhesion to the perovskite via -NH 2 I and Mulliken charge distribution. Device analysis corroborates that stronger bonding interaction attenuates the defect densities and suppresses ion migration. This work underscores the crucial role of bifunctional molecules with stronger surface adsorption in defect mitigation, setting the stage for the design of charge-regulated molecular passivation to enhance the performance and stability of HPSC. Molecular passivation is promising for improving the performance and operation stability of perovskite solar cells. Here, authors employ piperazine dihydriodide to strengthen adhesion to MA-free perovskite via −NH 2 I and Mulliken charge distribution, realizing charge-regulated molecular passivation.

Contact selectivity is a key parameter for enhancing and improving the power conversion efficiency (PCE) of crystalline silicon (c-Si)-based solar cells. Carrier selective contacts (CSC) are the key technology which has the potential to achieve a higher PCE for c-Si-based solar cells closer to their theoretical efficiency limit. A recent and state-of-the-art approach in this domain is the tunnel oxide passivated contact (TOPCon) approach, which is completely different from the existing classical heterojunction solar cells. The main and core element of this contact is the tunnel oxide, and its main role is to cut back the minority carrier recombination at the interface. A state-of-the-art n-type c-Si-based TOPCon solar cell featuring a passivated rear contact was experimentally analyzed, and the highest PCE record of ~25.7% was achieved. It has a high fill factor (FF) of ~83.3%. These reported results prove that the highest efficiency potential is that of the passivated full area rear contact structures and it is more efficient than that of the partial rear contact (PRC) structures. In this paper, a review is presented which considers the key characteristics of TOPCon solar cells, i.e., minority carrier recombination, contact resistance, and surface passivation. Additionally, practical challenges and key issues related to TOPCon solar cells are also highlighted. Finally, the focus turns to the characteristics of TOPCon solar cells, which offer an improved and better understanding of doping layers and tunnel oxide along with their mutual and combined effect on the overall performance of TOPCon solar cells.

The aqueous instability of halide perovskite seriously hinders its direct application in water as a potential photocatalyst. Here, we prepared a new type of polyvinylpyrrolidone (PVP) passivated δ-CsPbI3 (δ-CsPbI3@PVP) microcrystal by a facile method. This material can be uniformly dispersed in water and stably maintain its crystal structure for a long time, breaking through the bottleneck of halide perovskite photocatalysis in water. Under visible light, δ-CsPbI3@PVP can almost completely photodegrade organic dyes (including Rhodamine B, methylene blue, and crystal violet) in only 20 min. The efficient photocatalytic activity is attributed to the enhanced visible light absorption arising from PbI2 defects in δ-CsPbI3@PVP and the intrinsic low photoluminescence quantum yield of δ-CsPbI3, which induces efficient light absorption and photocatalytic activity. We highlight δ-CsPbI3@PVP as an effective aqueous photocatalyst, and this study provides new insights into how to exploit the potential of halide perovskite in photocatalytic applications.

Interest in germanium electronic devices is experiencing a comeback thanks to their suitability for a wide range of new applications, like CMOS transistors, quantum technology or infrared photonics. Among these applications, Ge-based thermophotovoltaic converters could become the backbone of thermo-electrical batteries. However, these devices are still far from the efficiency threshold needed for industrial deployment, with surface recombination as the main limiting factor for the material. In this work, we discuss the main passivation techniques developed for germanium photovoltaic and thermophotovoltaic devices, summarizing their main advantages and disadvantages. The analysis reveals that surface recombination velocities as low as 2.7 cm/s and 1.3 cm/s have already been reported for p-type and n-type germanium, respectively, although improving surface recombination velocities below 100 cm/s would result in marginal efficiency gains. Therefore, the main challenge for the material is not reducing this parameter further but developing robust and reliable processes for integrating the current techniques into functional devices.

Improving thermal stability is of great importance for the industrialization of polymer solar cells (PSC). In this paper, we systematically investigated the high-temperature thermal annealing effect on the device performance of the state-of-the-art polymer:non-fullerene (PM6:Y6) solar cells with an inverted structure. Results revealed that the overall performance decay (19% decrease) was mainly due to the fast open-circuit voltage (VOC, 10% decrease) and fill factor (FF, 10% decrease) decays whereas short circuit current (JSC) was relatively stable upon annealing at 150 °C (0.5% decrease). Pre-annealing on the ZnO/PM6:Y6 at 150 °C before the completion of cell fabrication resulted in a 1.7% performance decrease, while annealing on the ZnO/PM6:Y6/MoO3 films led to a 10.5% performance decay, indicating that the degradation at the PM6:Y6/MoO3 interface is the main reason for the overall performance decay. The increased ideality factor and reduced built-in potential confirmed by dark J − V curve analysis further confirmed the increased interfacial charge recombination after thermal annealing. The interaction of PM6:Y6 and MoO3 was proved by UV-Vis absorption and XPS measurements. Such deep chemical doping of PM6:Y6 led to unfavorable band alignment at the interface, which led to increased surface charge recombination and reduced built-in potential of the cells after thermal annealing. Inserting a thin C60 layer between the PM6:Y6 and MoO3 significantly improved the cells’ thermal stability, and less than 2% decay was measured for the optimized cell with 3 nm C60.

HighlightsA facile and effective surface passivation strategy was demonstrated to improve the optical and stability of CsPbI3 nanocrystals by using guanidinium iodide post-treatment.Guanidinium cations was shown to be compatible with CsPbI3 perovskite, leading to significantly improved surface properties of CsPbI3 nanocrystals.Performance of the CsPbI3 nanocrystal-based light-emitting device was enhanced by 3.6 folds.The remarkable evolution of metal halide perovskites in the past decade makes them promise for next-generation optoelectronic material. In particular, nanocrystals (NCs) of inorganic perovskites have demonstrated excellent performance for light-emitting and display applications. However, the presence of surface defects on the NCs negatively impacts their performance in devices. Herein, we report a compatible facial post-treatment of CsPbI3 nanocrystals using guanidinium iodide (GuI). It is found that the GuI treatment effectively passivated the halide vacancy defects on the surface of the NCs while offering effective surface protection and exciton confinement thanks to the beneficial contribution of iodide and guanidinium cation. As a consequence, the film of treated CsPbI3 nanocrystals exhibited significantly enhanced luminescence and charge transport properties, leading to high-performance light-emitting diode with maximum external quantum efficiency of 13.8% with high brightness (peak luminance of 7039 cd m−2 and a peak current density of 10.8 cd A−1). The EQE is over threefold higher than performance of untreated device (EQE: 3.8%). The operational half-lifetime of the treated devices also was significantly improved with T50 of 20 min (at current density of 25 mA cm−2), outperforming the untreated devices (T50 ~ 6 min).

Surfaces of semiconductors are notorious for the presence of electronic defects such that passivation approaches are required for optimal performance of (opto)electronic devices. For Ge, thin films of Al 2 O 3 prepared by atomic layer deposition (ALD) can induce surface passivation; however, no extensive study on the effect of the Al 2 O 3 process parameters has been reported. In this work we have investigated the influence of the Al 2 O 3 thickness (1–44 nm), substrate temperature (50–350 °C), and post-deposition anneal (in N 2 , up to 600 °C). We demonstrated that an effective surface recombination velocity as low as 170 cm s −1 can be achieved. The role of the GeO x interlayer as well as the presence of interface charges was addressed and a fixed charge density Q f = −(1.8 ± 0.5) × 10 12  cm −2 has been found. The similarities and differences between the passivation of Ge and Si surfaces by ALD Al 2 O 3 prepared under the same conditions are discussed. Graphic Abstract

Although ZnO nanostructure-based photodetectors feature a well-established system, they still present difficulties when being used in practical situations due to their slow response time. In this study, we report on how forming an amorphous SnO2 (a-SnO2) shell layer on ZnO nanorods (NRs) enhances the photoresponse speed of a ZnO-based UV photodetector (UV PD). Our suggested UV PD, consisting of a ZnO/a-SnO2 NRs core–shell structure, shows a rise time that is 26 times faster than a UV PD with bare ZnO NRs under 365 nm UV irradiation. In addition, the light responsivity of the ZnO/SnO2 NRs PD simultaneously increases by 3.1 times, which can be attributed to the passivation effects of the coated a-SnO2 shell layer. With a wide bandgap (~4.5 eV), the a-SnO2 shell layer can successfully suppress the oxygen-mediated process on the ZnO NRs surface, improving the photoresponse properties. Therefore, with a fast photoresponse speed and a low fabrication temperature, our as-synthesized, a-SnO2-coated ZnO core–shell structure qualifies as a candidate for ZnO-based PDs.

The energy distribution of the interface states ( N ss ) and relaxation time (τ) are calculated from the capacitance-frequency ( C-f ) characteristics for Al/p-type Si/Al metal-semiconductor and Al/V 2 O 5 /p-type Si/Al metal–interfacial layer–semiconductor diodes with and without anodic surface passivation. The experimental results show that the density of the interface states and the relaxation times increase almost exponentially with the bias from the top of the valence band to the center of the gap for each diode produced. At the same time, using the C-f characteristics, the dielectric properties such as the dielectric constant ( ε′ ), dielectric loss ( ε″ ), dielectric loss tangent ( tanδ ), real and imaginary portions of the electric modulus ( M’ and M″ ) and ac electrical conductivity ( σ ac ) are investigated in this study. The analysis was performed at room temperature, in the frequency range from 1 kHz to 10 MHz, and the voltage range from 0 to 0.24 V. The experimental results show that the ε′ , ε″ and tanδ values decrease with increasing frequency while σ ac , M′ and M″ values increase. This results will show that dielectric parameters are strongly frequency dependent.