Explore the vast range of titles available.

The accurate measurement and the investigation of electromagnetic transients are becoming more important, especially with the increasing integration of renewable energy sources into the power grid. These sources introduce new transient phenomena due to the extensive use of power electronics. To achieve this, the measurement devices must have a broadband response capable of measuring fast transients. This paper presents a capacitive electric field sensor-based measurement system to measure transient overvoltages in high-voltage substations. The concept and design of the measurement system are first presented. Then, the design and concept are validated using tests performed in a high-voltage laboratory. Afterwards, two different calibration techniques are discussed: the simplified method (SM) and the coupling capacitance compensation (CCC) method. Finally, three recorded transients are evaluated using the calibration methods. The investigation revealed that the SM tends to overestimate the maximum overvoltage, highlighting the CCC method as a more suitable approach for calibrating transient overvoltage measurements. This measurement system has been validated using various measurements and can be an efficient and flexible solution for the long-term monitoring of transient overvoltages in high-voltage substations.

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristics, and a behavioural voltage source, which includes multiple RC units to represent different time constants for trapping and detrapping effect from 100 ns to 100 s range. All the required parameters in the model can be obtained by fitting method using a datasheet or experimental characterisation results. The model is then implemented into our developed virtual prototyping software, where the device compact model is co-simulated with a parasitic inductance physical model to obtain the switching waveform. As model order reduction is applied in our software to resolve physical model, the device switching current and voltage waveform can be obtained in the range of minutes. By comparison with experimental measurements, the model is validated to accurately represent device switching transients as well as their spectrum in frequency domain until 100 MHz. In terms of dynamic RDSon value, the mismatch between the model and experimental results is within 10% under different power converter operation conditions in terms of switching frequencies and duty cycles, so designers can use this model to accurately obtain GaN-HEMT power losses due to trapping and detrapping effects for power electronics converters.

A derivation of the dynamic model of a medium voltage vacuum circuit breaker and induction motor in space vectors in coordinates αβ0 allow us to model switching transients in various dynamic states of the motor. In the case of the Clark transformation, the corresponding numerical integration technique can be selected including variable time-step integration techniques to avoid numerical instabilities due to the stiffness of the system. Assymetrical operations such as switching cause the power system to become unbalanced and the transformed equations α, β, and 0 are not uncoupled. Therefore, it is necessary to derive a coupling matrix between circuit breaker voltages and currents in the coordinate system αβ0. The subject of our interest is switching overvoltages that arise when turning off small inductive currents by a vacuum circuit breaker. When deriving the model of a vacuum circuit breaker, all its properties encountered during this action are taken into account, i.e., current chop, virtual current chop, dielectric barrier in the circuit breaker and its recovery rate, and the ability of the vacuum circuit breaker to extinguish high frequency currents. Simulation results are compared with the measured results on a medium voltage motor as well as with the simulation results of the mathematical model of the test circuit according to IEC 62271-110 resolved using the nodal method (EMTP algorithm). Models are implemented in the MATLAB/Simulink programming environment.

This paper presents the switching transients of medium-voltage low-harmonic filter banks, which have alower back-to-back inrush current and higher transient recovery voltage (TRV) compared with capacitor banks. The switching transients of the filter banks are described by the analytical approach and field measurements for 150 MVA back-to-back filter banks are provided to support the switching phenomena described in this paper. As a mitigation measure of the high transient recovery voltage, a double-breaker type switchgear is analyzed in terms of the operating sequence and the time of the upper and lower breakers. From the analyses, an operation scheme for the double-breaker switchgear is proposed to avoid insulation failure of the breaker during the interruption by mitigating the transient recovery voltage across each breaker.

In this study, transients that can occur in the collection grids of offshore wind farms were investigated. On the basis of the multiple prestrike and reignition model that can reflect the actual operation of a vacuum circuit breaker (VCB), a switching transient simulation model of a typical offshore wind farm was built. The developed model included a VCB, a transformer, a cable, and an arrester. Issues concerning the closing time, length of the feeder, and topology of the collection grid were discussed. Results showed that the relationship between overvoltage amplitude and closing time was approximately sinusoidal and the maximum value was obtained when the closing time was near the peak of the power source. In addition, the overvoltage at the end of a feeder terminal was the largest among all of the transformer overvoltages of the same feeder. The overvoltage of the main transformer and that of the transformer located at the end of a feeder decreased slowly with the increase in feeder length during the closing of VCB. However, these overvoltages were positively related to feeder length during the opening of VCB. The star topology was superior to the other topologies in terms of coping with the overvoltage caused by switching transients. The effectiveness of a suppression measure, namely, installation of a resistance‐capacitor filter, was also verified.

In order to study the sequential turbocharging switching process of low-speed diesel engine, this paper uses GT-power software to establish a simulation model of sequential turbocharging low-speed diesel engine. It is enhanced and improved into a model of a sequential supercharged diesel engine. Modules such as load, governor, valve control, and surge margin are set up in the simulation model. Then parameters such as switching speed, valve opening time and response time are set in the model. Through the above preparations, the thesis has carried out the simulation calculation of the sequential supercharging transient switching process and verified the rationality of the setting parameters and the accuracy of the module setting. This provides a certain reference for the valve control strategy of the sequential supercharging switching system of low-speed diesel engines.

The Gallium Nitride high electron mobility transistor (GaN HEMT) has been considered as a potential power semiconductor device for high switching speed and high power density application since its commercialization. Compared with the traditional Si transistors, GaN HEMT has faster switching speed and lower on-off loss. As a result, it is more sensitive to the nonlinear parameters due to the fast switching speed. The subsequent voltage and current overshooting will affect the efficiency and safety of the GaN HEMT and power electronic systems. In this paper, an accurate switching transient analytical model for GaN HEMT is proposed, which considers the effects of parasitic inductances, nonlinear junction capacitances and nonlinear transconductance. The model characteristic of turn-ON process and turn-OFF process is illustrated in detail, and the equivalent circuits are derived for each switching transition. The accuracy of the proposed model can be verified by comparing the predicted switching waveform and switching loss with that of the experimental results based on the double pulse test (DPT) circuit. Compared with the conventional model, the proposed model is more accurate and matches better with the experimental results than the conventional model. Finally, this model can be used for analyzing the influences of gate resistance, nonlinear junction capacitances, and parasitic inductances on switching transient waveform and refining calculation switching loss.

Accurately revealing the generation mechanism and the mathematical relationship with system parameters of the power loss in the switching transients of high-voltage large power IGBT devices is very important for the device selection and circuit design of converter equipment. To reveal the mechanism of generating switching losses, this paper analyzes the switching transient processes of the IGBT devices in the basic commutation circuit in detail. Then this paper proposes an accurate calculation method based on a finite state machine (FSM) for the switching losses of IGBT devices, and verifies the correctness of this method. To further reveal the mathematical relationships among switching losses, device parameters, and loop parameters, approximate analytical formulas for the switching loss of different switching transient processes are mathematically derived, which can provide a theoretical basis for reducing the switching losses in converters.

The present work is aimed at developing an n-butanol sensor based on the chemi-resistive principle using MoO 3 nanostructures as a sensing element. Highly ordered free-standing α-MoO 3 nanobelts were synthesized using hydrothermal technique. The synthesis parameters adapted in the present work have paved a way in obtaining distinct MoO 3 nanostructure with minimal process time as compared with the earlier reports. Initially, the formation of monoclinic crystals with an end centered lattice of β-Mo 9 O 26 was observed, which then is transformed into orthorhombic α-MoO 3 on calcination at 450 °C for 5 h. XPS profiles of the nanobelts revealed the presence of molybdenum and oxygen in a stoichiometric ratio of 2.6. Penta- and hexa-coordinated defect centers of Mo 5+ and oxygen vacancies were observed from the photoluminescence spectra. The nanobelts respond to n-butanol vapors at room temperature with a 75-fold signal increase and response-recovery times of 17 & 10 s, respectively. The lowest detection limit is 1 ppm. The influence of relative humidity on the sensing response was also studied. Graphical abstract

Due to our limited knowledge about silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs), the theoretical analysis and change regularity in terms of the effects of temperature on their switching characteristics have not been fully characterized and understood. An analysis of variation in voltage (dVDS/dt) for SiC MOSFET during turn-on and turn-off has been performed theoretically and experimentally in this paper. Turn-off variation in voltage is not a strong function of temperature, whereas the turn-on variation in voltage has a monotonic relationship with temperature. The temperature dependence is a result of the competing effects between the positive temperature coefficient of the intrinsic carrier concentration and the negative temperature coefficient of the effective mobility of the electrons in SiC MOSFETs. The relationship between variation in voltage and supply voltage, load current, and gate resistance are also discussed. A temperature-based analytical model of dVDS/dt for SiC MOSFETs was derived in terms of internal parasitic capacitances during the charging and discharging processes at the voltage fall period during turn-on, and the rise period during turn-off. The calculation results were close to the experimental measurements. These results provide a potential junction temperature estimation approach for SiC MOSFETs. In SiC MOSFET-based practical applications, if the turn on dVDS/dt is sensed, the device temperature can be estimated from the relationship curve of turn on dVDS/dt versus temperature drawn in advance.