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Large Magnetoresistance in Topological Insulator Candidate TaSe3
by
Cai, Zixiu
, Muhammad Naveed
, Chuanying Xi
, Zhang, Haijun
, Lin, Dongjing
, Bu, Haijun
, Fucong Fei
, Song, Fengqi
, Wei, Boyuan
, Zhu, Tongshuai
, Xiaoxiang Xi
, Xie, Hangkai
, Chen, Bo
, Zhang, Yong
in
Carrier density
/ Density ratio
/ Fermi surfaces
/ First principles
/ Magnetoresistance
/ Magnetoresistivity
/ Oscillation modes
/ Topological insulators
2020
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Large Magnetoresistance in Topological Insulator Candidate TaSe3
by
Cai, Zixiu
, Muhammad Naveed
, Chuanying Xi
, Zhang, Haijun
, Lin, Dongjing
, Bu, Haijun
, Fucong Fei
, Song, Fengqi
, Wei, Boyuan
, Zhu, Tongshuai
, Xiaoxiang Xi
, Xie, Hangkai
, Chen, Bo
, Zhang, Yong
in
Carrier density
/ Density ratio
/ Fermi surfaces
/ First principles
/ Magnetoresistance
/ Magnetoresistivity
/ Oscillation modes
/ Topological insulators
2020
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While trying to remove the title from your shelf something went wrong :( Kindly try again later!
Do you wish to request the book?
Large Magnetoresistance in Topological Insulator Candidate TaSe3
by
Cai, Zixiu
, Muhammad Naveed
, Chuanying Xi
, Zhang, Haijun
, Lin, Dongjing
, Bu, Haijun
, Fucong Fei
, Song, Fengqi
, Wei, Boyuan
, Zhu, Tongshuai
, Xiaoxiang Xi
, Xie, Hangkai
, Chen, Bo
, Zhang, Yong
in
Carrier density
/ Density ratio
/ Fermi surfaces
/ First principles
/ Magnetoresistance
/ Magnetoresistivity
/ Oscillation modes
/ Topological insulators
2020
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Large Magnetoresistance in Topological Insulator Candidate TaSe3
Paper
Large Magnetoresistance in Topological Insulator Candidate TaSe3
2020
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Overview
Large unsaturated magnetoresistance (XMR) with magnitude about 1000% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscillation modes, associated with one hole pocket and two electron pockets in the bulk, respectively, are detected from our Shubnikov-de Hass (SdH) measurements, consistent with our first-principles calculations. With the detailed Hall measurements performed, our two-band model analysis exhibits an imperfect density ratio n_h/n_e closing 0.9 at T< 20 K , which suggests that the carrier compensations account for the XMR in TaSe3.
Publisher
Cornell University Library, arXiv.org
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