Paper

Controllable p-type Doping of 2D WSe2 via Vanadium Substitution

Hennig, Richard G, Gröning, Oliver, Stolz, Samuel, Alem, Nasim, Bachu, Saiphaneendra, Turker, Furkan, Robinson, Joshua A, Das, Saptarshi, Kachian, Jessica, Tan, Anne Marie Z, Pendurthi, Rahul, Kozhakhmetov, Azimkhan, Schuler, Bruno

2021

Overview

Scalable substitutional doping of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, we report scalable growth and vanadium (V) doping of 2D WSe2 at front-end-of-line (FEOL) and back-end-of-line (BEOL) compatible temperatures of 800 {\\deg}C and 400 {\\deg}C, respectively. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe2, which results in p-type doping via the introduction of discrete defect levels that lie close to the valence band maxima. The p-type nature of the V dopants is further verified by constructed field-effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, our study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic-grade wafer-scale extrinsic 2D semiconductors.

• Publisher: Cornell University Library, arXiv.org
• Subject: Atomic properties / Doping / Field effect transistors / Memory devices / Semiconductor devices / Stability / Transition metal compounds / Two dimensional materials / Valence band / Vanadium