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Novel self-epitaxy for inducing superconductivity in the topological insulator (Bi1-xSbx)2Te3
Novel self-epitaxy for inducing superconductivity in the topological insulator (Bi1-xSbx)2Te3
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Novel self-epitaxy for inducing superconductivity in the topological insulator (Bi1-xSbx)2Te3
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Novel self-epitaxy for inducing superconductivity in the topological insulator (Bi1-xSbx)2Te3
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Novel self-epitaxy for inducing superconductivity in the topological insulator (Bi1-xSbx)2Te3
Novel self-epitaxy for inducing superconductivity in the topological insulator (Bi1-xSbx)2Te3
Paper

Novel self-epitaxy for inducing superconductivity in the topological insulator (Bi1-xSbx)2Te3

2020
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Overview
Using the superconducting proximity effect for engineering a topological superconducting state in a topological insulator (TI) is a promising route to realize Majorana fermions. However, epitaxial growth of a superconductor on the TI surface to achieve a good proximity effect has been a challenge. We discovered that simply depositing Pd on thin films of the TI material (Bi\\(_{1-x}\\)Sb\\(_x\\))\\(_2\\)Te\\(_3\\) leads to an epitaxial self-formation of PdTe\\(_2\\) superconductor having the superconducting transition temperature of ~1 K. This self-formed superconductor proximitizes the TI, which is confirmed by the appearance of a supercurrent in Josephson-junction devices made on (Bi\\(_{1-x}\\)Sb\\(_x\\))\\(_2\\)Te\\(_3\\). This self-epitaxy phenomenon can be conveniently used for fabricating TI-based superconducting nanodevices to address the superconducting proximity effect in TIs.

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