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Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold
by
Xiong, Meng
, Yu, Yi
, Dimopoulos, Evangelos
, Marchevsky, Andrey
, Semenova, Elizaveta
, Yvind, Kresten
, Sakanas, Aurimas
, Mørk, Jesper
in
Energy consumption
/ Heterostructures
/ Lasers
/ Leakage current
/ Light sources
/ Optical interconnects
/ Optical pumping
/ P-i-n junctions
/ Photonic crystals
/ Room temperature
/ Static characteristics
/ Thermodynamic properties
/ Threshold currents
2022
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Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold
by
Xiong, Meng
, Yu, Yi
, Dimopoulos, Evangelos
, Marchevsky, Andrey
, Semenova, Elizaveta
, Yvind, Kresten
, Sakanas, Aurimas
, Mørk, Jesper
in
Energy consumption
/ Heterostructures
/ Lasers
/ Leakage current
/ Light sources
/ Optical interconnects
/ Optical pumping
/ P-i-n junctions
/ Photonic crystals
/ Room temperature
/ Static characteristics
/ Thermodynamic properties
/ Threshold currents
2022
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Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold
by
Xiong, Meng
, Yu, Yi
, Dimopoulos, Evangelos
, Marchevsky, Andrey
, Semenova, Elizaveta
, Yvind, Kresten
, Sakanas, Aurimas
, Mørk, Jesper
in
Energy consumption
/ Heterostructures
/ Lasers
/ Leakage current
/ Light sources
/ Optical interconnects
/ Optical pumping
/ P-i-n junctions
/ Photonic crystals
/ Room temperature
/ Static characteristics
/ Thermodynamic properties
/ Threshold currents
2022
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Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold
Paper
Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold
2022
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Overview
Light sources with ultra-low energy consumption and high performance are required to realize optical interconnects for on-chip communication. Photonic crystal (PhC) nanocavity lasers are one of the most promising candidates to fill this role. In this work, we demonstrate an electrically-driven PhC nanolaser with an ultra-low threshold current of 10.2 A emitting at 1540 nm and operated at room temperature. The lasers are InP-based bonded on Si and comprise a buried heterostructure active region and lateral p-i-n junction. The static characteristics and the thermal properties of the lasers have been characterized. The effect of disorder and p-doping absorption on the Q-factor of passive cavities was studied. We also investigate the leakage current due to the lateral p-i-n geometry by comparing the optical and electrical pumping schemes.
Publisher
Cornell University Library, arXiv.org
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