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Simulation Study for the Structural Cell Design Optimization of 15kV SiC p-Channel IGBTs
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Simulation Study for the Structural Cell Design Optimization of 15kV SiC p-Channel IGBTs
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Journal Article
Simulation Study for the Structural Cell Design Optimization of 15kV SiC p-Channel IGBTs
2019
Overview
In this paper, the structural cell design optimization of 15kV 4H-SiC p-channel IGBT is performed. The effects of the parameters of JFET region on the blocking voltage and the forward characteristics are analyzed by numerical simulations. The results indicate that the JFET width and JFET region concentration have an important effect on the performance of IGBTs. Based on the simulation structure in this paper, the optimum JFET width is 10μm, and the optimum JFET concentration is 7×1015cm−3. Meanwhile, they should be carefully designed to achieve the best trade-off between the blocking voltage and the forward voltage drop.
Publisher
Trans Tech Publications Ltd
