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High On/Off Ratio Spintronic Multi‐Level Memory Unit for Deep Neural Network (Adv. Sci. 13/2022)
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High On/Off Ratio Spintronic Multi‐Level Memory Unit for Deep Neural Network (Adv. Sci. 13/2022)
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Journal Article
High On/Off Ratio Spintronic Multi‐Level Memory Unit for Deep Neural Network (Adv. Sci. 13/2022)
2022
Overview
Spintronic Multi‐Level Memory Unit In article number 2103357 by Kun Zhang, Yue Zhang, and co‐workers, a spintronic multi‐level memory unit (MLMU) with high on/off ratio is constructed by integrating a magnetic tunnel junction chain and a diode in parallel. This MLMU can enable high‐accuracy artificial intelligence applications, such as a deep neural network accelerator for image classification. Just as described in the cover design, the MLMUs are regarded as building blocks to assemble the artificial‐intelligence brain.
Publisher
John Wiley and Sons Inc
Subject
