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Optimization of Post-selenization Process of Co-sputtered CuIn and CuGa Precursor for 11.19% Efficiency Cu(In, Ga)Se2 Solar Cells
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Optimization of Post-selenization Process of Co-sputtered CuIn and CuGa Precursor for 11.19% Efficiency Cu(In, Ga)Se2 Solar Cells
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Optimization of Post-selenization Process of Co-sputtered CuIn and CuGa Precursor for 11.19% Efficiency Cu(In, Ga)Se2 Solar Cells
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Journal Article
Optimization of Post-selenization Process of Co-sputtered CuIn and CuGa Precursor for 11.19% Efficiency Cu(In, Ga)Se2 Solar Cells
2017
Overview
In this work, CuInGa alloy precursor films are fabricated by co-sputtering of CuIn and CuGa targets simultaneously. After selenization in a tube-type rapid thermal annealing system under a Se atmosphere, the Cu(In, Ga)Se
2
(CIGS) absorber layers are obtained. Standard soda lime glass (SLG)/Mo/CIGS/CdS/i-ZnO/ITO/Ag grid structural solar cells are fabricated based on the selenized CIGS absorbers. The influences of selenization temperatures on the composition, crystallinity, and device performances are systematically investigated by x-ray energy dispersive spectroscopy, x-ray diffraction, Raman spectroscopy, and the current density–voltage (
J
–
V
) measurement. It is found that the elemental ratio of Cu/(In + Ga) strongly depends on the selenization temperatures. Because of the appropriate elemental ratio, a 9.92% conversion efficiency is reached for the CIGS absorber selenized at 560°C. After the additional optimization by pre-annealing treatment at 280°C before the selenization, a highest conversion efficiency of 11.19% with a open-circuit (
V
oc
) of 456 mV, a short-circuit (
J
sc
) of 40.357 mA/cm
2
and a fill factor of 60.82% without antireflection coating has been achieved. Above 13% efficiency improvement was achievable. Our experimental findings presented in this work demonstrate that the post-selenization of co-sputtered CuIn and CuGa precursor is a promising way to fabricate high quality CIGS absorbers.
Publisher
Springer US
