Asset Details
Do you wish to reserve the book?
Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization
Do you wish to request the book?
Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization
2019
Overview
The effective modeling methodology of 4H-SiC trench gate MOSFETs is presented. The potential barrier lowering at the MOS channel region suggested by I-V measurements is implemented to commercial TCAD tool as the net-doping reduction. The proposed model is validated by comparison of TCAD simulations with I-V measurements and SEM image observations.
Publisher
Trans Tech Publications Ltd
