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Ferroelectric Properties of (001)- and (106)-Oriented SrBi2Ta2O9 Epitaxial Thin Films
by
Kumagai, Toshiya
, Yamaguchi, Iwao
, Nagahama, Tsutomu
, Tsuchiya, Toshio
, Manabe, Takaaki
, Tsukada, Kenichi
, Mizuta, Susumu
in
Anisotropy
/ Annealing
/ Epitaxial growth
/ Ferroelectric materials
/ Ferroelectricity
/ Partial pressure
/ Pyrolysis
/ Strontium titanates
/ Substrates
/ Thin films
2000
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Ferroelectric Properties of (001)- and (106)-Oriented SrBi2Ta2O9 Epitaxial Thin Films
by
Kumagai, Toshiya
, Yamaguchi, Iwao
, Nagahama, Tsutomu
, Tsuchiya, Toshio
, Manabe, Takaaki
, Tsukada, Kenichi
, Mizuta, Susumu
in
Anisotropy
/ Annealing
/ Epitaxial growth
/ Ferroelectric materials
/ Ferroelectricity
/ Partial pressure
/ Pyrolysis
/ Strontium titanates
/ Substrates
/ Thin films
2000
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Ferroelectric Properties of (001)- and (106)-Oriented SrBi2Ta2O9 Epitaxial Thin Films
by
Kumagai, Toshiya
, Yamaguchi, Iwao
, Nagahama, Tsutomu
, Tsuchiya, Toshio
, Manabe, Takaaki
, Tsukada, Kenichi
, Mizuta, Susumu
in
Anisotropy
/ Annealing
/ Epitaxial growth
/ Ferroelectric materials
/ Ferroelectricity
/ Partial pressure
/ Pyrolysis
/ Strontium titanates
/ Substrates
/ Thin films
2000
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Ferroelectric Properties of (001)- and (106)-Oriented SrBi2Ta2O9 Epitaxial Thin Films
Journal Article
Ferroelectric Properties of (001)- and (106)-Oriented SrBi2Ta2O9 Epitaxial Thin Films
2000
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Overview
Epitaxially grown SrBi2Ta2O9 (SBT) thin films with (001) and (106) orientations were prepared on La-doped SrTiO3 (001) and (110) substrates, respectively, by coating-pyrolysis process. When the films were annealed in air, their epitaxy was poor and no significant difference was observed in the P-E characteristics for the films that have different orientations. By contrast, the crystallinity and epitaxy of the films increased with decreasing oxygen partial pressure, p(O2), of annealing atmosphere. Using these high quality epitaxial films, we observed a distinct difference in P-E hysteresis curves, which reflects the orientation of the films. After postannealing of these films in O2 to compensate for possible oxygen deficiency, which might have been introduced into the SBT films owing to low p(O2) annealing, the anisotropy of the ferroelectric response was maintained and almost the same P-E loops were obtained.
Publisher
Springer Nature B.V
Subject
MBRLCatalogueRelatedBooks
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