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Improvement of n-butanol vapor sensing behavior of sensor based on cobalt-doped indium oxide nanorods
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Improvement of n-butanol vapor sensing behavior of sensor based on cobalt-doped indium oxide nanorods
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Improvement of n-butanol vapor sensing behavior of sensor based on cobalt-doped indium oxide nanorods
Improvement of n-butanol vapor sensing behavior of sensor based on cobalt-doped indium oxide nanorods
Journal Article

Improvement of n-butanol vapor sensing behavior of sensor based on cobalt-doped indium oxide nanorods

2024
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Overview
Herein, the cobalt (Co) was successfully doped into the lattice of indium oxide (In 2 O 3 ) nanorods (NRs) in an easy-to-operate process. When the as-prepared 1-mol% Co-doped In 2 O 3 (CIO1) NRs was utilized for monitoring hazardous gases, it exhibited best gas sensing performance, including high response value (20.5), fast response-recovery speed (2 s/51 s), and favorable selectivity coefficient (> 2.2) in 50 ppm n-butanol vapor at 230 °C. In addition, the wide detection range (5–200 ppm), refined recyclability, and long service life (> 15 days) ensured its practical application value. We inferred that the improvement of n-butanol vapor sensing capabilities could be attributed to the narrowed bandgap, more oxygen vacancies (29.04%), and chemisorbed oxygen (33.38%), and higher initial resistance (approximately 170 MΩ) arised from Co catalysis effect. The promoted sensing mechanism was also presented based on gas–solid interfacial electron transfer and surface’s redox reaction, the enhanced selectivity for CIO1 NRs sensor was mainly attributed to synergistic effect of catalytic property of Co 3+ ions and structural characteristics of n-butanol molecules.