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UV-LED controlled GaN-based SAW phase shifter
by
Fareed, Q.
, Gaska, R.
, Sinius, J.
, Ciplys, D.
, Shur, M.S.
, Rimeika, R.
, Bilenko, Yu
in
Acoustic wave devices, piezoelectric and piezoresistive devices
/ Applied sciences
/ Circuit properties
/ Circuits of signal characteristics conditioning (including delay circuits)
/ Electric, optical and optoelectronic circuits
/ Electronic circuits
/ Electronics
/ Exact sciences and technology
/ Frequency filters
/ Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
2006
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UV-LED controlled GaN-based SAW phase shifter
by
Fareed, Q.
, Gaska, R.
, Sinius, J.
, Ciplys, D.
, Shur, M.S.
, Rimeika, R.
, Bilenko, Yu
in
Acoustic wave devices, piezoelectric and piezoresistive devices
/ Applied sciences
/ Circuit properties
/ Circuits of signal characteristics conditioning (including delay circuits)
/ Electric, optical and optoelectronic circuits
/ Electronic circuits
/ Electronics
/ Exact sciences and technology
/ Frequency filters
/ Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
2006
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UV-LED controlled GaN-based SAW phase shifter
by
Fareed, Q.
, Gaska, R.
, Sinius, J.
, Ciplys, D.
, Shur, M.S.
, Rimeika, R.
, Bilenko, Yu
in
Acoustic wave devices, piezoelectric and piezoresistive devices
/ Applied sciences
/ Circuit properties
/ Circuits of signal characteristics conditioning (including delay circuits)
/ Electric, optical and optoelectronic circuits
/ Electronic circuits
/ Electronics
/ Exact sciences and technology
/ Frequency filters
/ Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
2006
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Journal Article
UV-LED controlled GaN-based SAW phase shifter
2006
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Overview
The UV-LED controlled phase shifter of an RF signal based on a GaN-sapphire surface-acoustic-wave (SAW) filter has been implemented. At the optical wavelength 298nm and SAW frequency 307MHz, the UV-induced relative change in SAW velocity per unit optical power density is 2*10-6 (muW/mm2)-1 corresponding to 3.7 deg phase shift. The phase modulation of an RF signal by rectangular UV pulses has been demonstrated. The efficiency of the phase shifter can be considerably improved by proper selection of sheet-resistivity of the GaN layer.
Publisher
Institution of Electrical Engineers
Subject
Acoustic wave devices, piezoelectric and piezoresistive devices
/ Circuits of signal characteristics conditioning (including delay circuits)
/ Electric, optical and optoelectronic circuits
/ Exact sciences and technology
/ Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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